High frequency power amplification device

A radio-frequency power amplifier device that is a radio-frequency power amplifier device of a hybrid type in which a carrier amplifier semiconductor device and a peak amplifier semiconductor device are disposed on a principal surface of a multilayer submount substrate, the multilayer submount substrate including a plurality of resin layers and a plurality of wiring layers, the radio-frequency power amplifier device comprising:

• radio-frequency signal wiring that is wired in a first wiring layer provided on the principal surface, and transmits a radio-frequency signal to the carrier amplifier semiconductor device or the peak amplifier semiconductor device;
• and
• bias power supply wiring that is wired in a wiring layer lower than the first wiring layer of the multilayer submount substrate, and supplies a carrier-amplifier bias power supply voltage to the carrier amplifier semiconductor device or supplies a peak-amplifier bias power supply voltage to the peak amplifier semiconductor device,
• wherein the carrier amplifier semiconductor device includes a first semiconductor substrate,
• the peak amplifier semiconductor device includes a second semiconductor substrate having a thermal conductivity lower than a thermal conductivity of the first semiconductor substrate, and
• the radio-frequency power amplifier device comprises, on the principal surface of the multilayer submount substrate, a bias power supply semiconductor device that outputs the carrier-amplifier bias power supply voltage or the peak-amplifier bias power supply voltage.