Wafer level analysis for VCSEL screening

A method for analyzing a plurality of Vertical-Cavity Surface-Emitting Lasers (VCSELs) having individual performance characteristics on a wafer, the method comprising:

• applying a stimulus to each of the plurality of VCSELs on the wafer;
• measuring, for each of the plurality of VCSELs and with one or more sensors, two or more VCSEL parameters responsive to the stimulus;
• correlating, for each VCSEL, the measured two or more VCSEL parameters to define a value of a common performance characteristic, wherein the value of the common performance characteristic comprises an aperture size of a VCSEL;
• identifying clusters of VCSELs on the wafer having similar values of the common performance characteristic;
• and
• screening the identified clusters of VCSELs based on one or more conditions associated with a VCSEL optical performance requirement.

A system for analyzing a wafer having Vertical-Cavity Surface-Emitting Lasers (VCSELs), the system comprising:

• a VCSEL stimulator that applies a stimulus to at least some VCSELs on the wafer;
• one or more sensors that measure, for each of the at least some VCSELs, two or more VCSEL parameters responsive to the stimulus;
• a processor;
• and
• memory coupled with the processor that comprises instructions which, when executed by the processor, enable the processor to:
• correlate, for each of the at least some VCSELs, the measured two or more VCSEL parameters to define a value of a common performance characteristic, wherein the value of the common performance characteristic comprises an aperture size of a VCSEL;
• identify clusters of VCSELs on the wafer that have values of the common performance characteristic within a predefined amount;
• and
• screening the identified clusters of VCSELs based on one or more conditions associated with a VCSEL optical performance requirement.