# US 12,224,389 B2 · Light-emitting element including a reflective portion having a first, second, and third layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,389 B2 - Document ID: US12224389B2 - Status: Granted - Kind: B2 - Application number: 17/466,680 - Filed: 2021-09-03 - Published: 2022-03-10 - Granted: 2025-02-11 - Earliest claimed: 2020-09-07 - Assignees: Nichia Corporation - Applicants: Nichia Corporation - Inventors: Shun Kitahama; Yusuke Minato - Web page: https://patentgrep.com/patent/US12224389B2 ## CPC - H10H 20/835: {Reflective materials} - H10H 20/856: Reflecting means - H10H 20/8162: {Current-blocking structures} - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/833: Transparent materials - H10H 20/032: {of electrodes} - H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light-emitting element includes: a semiconductor layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; a reflective portion including an insulative first layer located on the first semiconductor layer, a second layer made of a metal material located on the first layer, and a third layer located on the second layer; an insulative layer covering the reflective portion; a light-transmissive conductive layer located on the insulative layer and on the first semiconductor layer; a first electrode located on a portion of the light-transmissive conductive layer that is above the reflective portion; and a second electrode located on the second semiconductor layer. ## Claims ### Claim 1 A light-emitting element comprising: a semiconductor layered structure comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; a reflective portion comprising an insulative first layer located on the first semiconductor layer, a second layer made of a metal material located on the first layer, and a third layer made of an insulative material located on the second layer, wherein a width of the second layer is less than a width of the third layer in a cross-sectional view, and an end portion of the third layer is in contact with a surface of the first layer that is not covered by the second layer; an insulative layer covering the reflective portion; a light-transmissive conductive layer located on the insulative layer and on the first semiconductor layer; a first electrode located on a portion of the light-transmissive conductive layer that is above the reflective portion; a second electrode located on the second semiconductor layer; and an insulative portion located between the second electrode and the second semiconductor layer; wherein: the insulative portion is in contact with the second electrode and the second semiconductor layer at a region below the second electrode; and a thickness of the reflective portion is greater than a thickness of the insulative portion. ### Claim 2 (depends on 1) The light-emitting element according to claim 1, wherein: the first electrode includes a first connecting portion and a first extended portion that extends from the first connecting portion; and the reflective portion is located between the first connecting portion and the first semiconductor layer, and between the first extended portion and the first semiconductor layer. ### Claim 3 (depends on 1) The light-emitting element according to claim 1, wherein an end portion of the second layer is covered by the third layer. ### Claim 4 (depends on 2) The light-emitting element according to claim 2, wherein an end portion of the second layer is covered by the third layer. ### Claim 5 (depends on 1) The light-emitting element according to claim 1, wherein a thickness of the insulative layer is larger than a thickness of the first layer. ### Claim 6 (depends on 2) The light-emitting element according to claim 2, wherein a thickness of the insulative layer is larger than a thickness of the first layer. ### Claim 7 (depends on 1) The light-emitting element according to claim 1, wherein: the first layer is made of a silicon oxide film; and the insulative layer is made of a silicon oxynitride film. ### Claim 8 (depends on 2) The light-emitting element according to claim 2, wherein: the first layer is made of a silicon oxide film; and the insulative layer is made of a silicon oxynitride film. ### Claim 9 (depends on 1) The light-emitting element according to claim 1, wherein the second layer is made of Al, Ag or an alloy including Al or Ag as its primary component. ### Claim 10 (depends on 2) The light-emitting element according to claim 2, wherein the second layer is made of Al, Ag or an alloy including Al or Ag as its primary component. ### Claim 11 (depends on 1) The light-emitting element according to claim 1, wherein a thickness of the reflective portion is 250 nm or more and 400 nm or less. ### Claim 12 (depends on 1) The light-emitting element according to claim 1, wherein the insulative layer is in contact with the first layer and the third layer, and the insulative layer is not in contact with the second layer. ### Claim 13 (depends on 1) The light-emitting element according to claim 1, wherein a number of layers of the reflective portion is greater than a number of layers of the insulative portion. ### Claim 14 (depends on 1) The light-emitting element according to claim 1, further comprising a protection layer located on the light-transmissive conductive layer and contacting a lateral surface of the first semiconductor layer.