# US 12,224,388 B2 · Component arrangement, package and package arrangement, as well as production method

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- Number: US 12,224,388 B2
- Document ID: US12224388B2
- Status: Granted
- Kind: B2
- Application number: 16/967,759
- Filed: 2019-02-11
- Published: 2022-09-29
- Granted: 2025-02-11
- Earliest claimed: 2018-02-09
- Assignees: Msg Lithoglas AG
- Applicants: MSG Lithoglas GmbH
- Inventors: Oliver Gyenge; Rachid Abdallah; Simon Maus; Ulli Hansen
- Web page: https://patentgrep.com/patent/US12224388B2

## CPC

- H10H 20/856: Reflecting means
- H01S 5/02216: Butterfly-type, i.e. with electrode pins extending horizontally from the housings
- H01S 5/02255: using beam deflecting elements
- H01S 5/02345: Wire-bonding
- H01S 5/0237: by soldering
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10H 20/8506: {Containers}
- H01S 5/02257: using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
- H10F 77/933: {for devices having potential barriers}
- H10H 20/036: {of packages}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 72/0198: {batch processes}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a component arrangement, including a carrier substrate; a spacer which is arranged on the carrier substrate so as to surround an installation space and has an outlet opening on a side facing away from the carrier substrate; an optical component arranged in the installation space; a contact connection which electrically conductively connects the optical component to external contacts arranged outside the installation space; a cover substrate which is arranged on the spacer and with which the outlet opening is covered in a light-permeable manner; and a light-reflecting surface which is formed on an anisotropically etched silicon component and is arranged in the installation space as an inclined surface at an angle of approx. 45° relative to the surface of the carrier substrate facing the installation space, in such a way that light radiated in a horizontal direction onto the light-reflecting surface can be radiated out in the vertical direction through the opening and the cover substrate, and vice versa.

## Claims

### Claim 1

A component arrangement, comprising:
a carrier substrate;
a spacer which is arranged on the carrier substrate so as to surround an installation space and has an outlet opening on a side facing away from the carrier substrate;
an optical component arranged in the installation space;
a contact connection which electrically conductively connects the optical component to external contacts arranged outside the installation space;
a cover substrate which is arranged on the spacer and with which the outlet opening is covered in a light-permeable manner; and
a light-reflecting surface which is formed on an anisotropically etched silicon component and is arranged in the installation space as an inclined surface at an angle of approximately 45° relative to a surface of the carrier substrate facing the installation space, in such a way that light radiated in a horizontal direction onto the light-reflecting surface can be radiated out in a vertical direction through the opening and the cover substrate, and vice versa, wherein the spacer is formed from the anisotropically etched silicon component;
wherein the outlet opening has, in plan view, an opening with a trapezoidal shape;
wherein the anisotropically etched silicon component, in a plan view, has a lower opening with a trapezoidal shape and an upper opening with a trapezoidal shape that is limited in one direction of its extent.

### Claim 2 (depends on 1)

The component arrangement according to claim 1, wherein the cover substrate at least partially fills the installation space.

### Claim 3 (depends on 1)

The component arrangement according to claim 1, wherein the light-reflecting surface has a surface-side mirror coating.

### Claim 4 (depends on 1)

The component arrangement according to claim 1, wherein the optical component has a lateral optical outlet/inlet, through which light can exit or enter in the horizontal direction.

### Claim 5 (depends on 1)

The component arrangement according to claim 1, wherein the optical component is arranged on a submount which is arranged on the carrier substrate.

### Claim 6 (depends on 1)

The component arrangement according to claim 1, wherein a first wall surface of the spacer, which faces the installation space and is arranged outside a region with the light-reflecting surface, is inclined relative to the vertical direction at a first angle different from 45°.

### Claim 7 (depends on 6)

The component arrangement according to claim 6, wherein a second wall surface of the spacer, which is different from the first wall surface, faces the installation space and is arranged outside the region with the light-reflecting surface, is inclined relative to the vertical direction at a second angle different from 45°, which is different from the first angle.

### Claim 8 (depends on 1)

A method, comprising:
producing the anisotropically etched silicon component from a silicon single crystal by anisotropic etching, wherein the silicon single crystal is inclined by approximately 9.7° to the 100 crystal orientation, such that a 111 crystal plane with a slope of approximately 45° is formed, and, in plan view, the opening with a trapezoidal shape is formed; and
producing the component arrangement according to claim 1 using the anisotropically etched silicon component, wherein the light-reflecting surface is formed in the component arrangement with the 111 crystal plane with the slope of approximately 45 °.

### Claim 9 (depends on 8)

A method for producing a package according to claim 8, wherein the package is produced by means of wafer-level packaging.