# US 12,224,381 B2 · Element and electronic device having a mixed layer of quantum dots and nanoparticles > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,381 B2 - Document ID: US12224381B2 - Status: Granted - Kind: B2 - Application number: 17/639,531 - Filed: 2019-09-02 - Published: 2022-10-13 - Granted: 2025-02-11 - Earliest claimed: 2019-09-02 - Assignees: Sharp Kabushiki Kaisha - Applicants: Sharp Kabushiki Kaisha - Inventors: Kenji Kimoto - Web page: https://patentgrep.com/patent/US12224381B2 ## CPC - H10H 20/8512: {Wavelength conversion materials} - H05B 33/14: characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source} - H10F 77/1433: {Quantum dots} - H10H 20/831: characterised by their shape - H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract In an element provided with a QD layer including QD phosphor particles, a first hole transport layer located between a first electrode and the QD layer is formed of a continuous film of a first carrier transport material. A second hole transport layer located between the first hole transport layer and the QD layer includes nanoparticles formed of a second carrier transport material. ## Claims ### Claim 1 An element comprising: a first electrode; a second electrode; a quantum dot phosphor layer located between the first electrode and the second electrode and including quantum dot phosphor particles; a first carrier transport layer located between the first electrode and the quantum dot phosphor layer and formed of a continuous film of a first carrier transport material; and a mixed layer located between the first carrier transport layer and the quantum dot phosphor layer and including (i) the quantum dot phosphor particles, and (ii) nanoparticles formed of a second carrier transport material, wherein a part of the quantum dot phosphor particles included in the mixed layer is in contact with the first carrier transport layer. ### Claim 2 (depends on 1) The element according to claim 1, wherein the first carrier transport material is a compound semiconductor. ### Claim 3 (depends on 1) The element according to claim 1, wherein the second carrier transport material is a compound semiconductor. ### Claim 4 (depends on 1) The element according to claim 1, wherein a conductivity type of the first carrier transport layer is identical to a conductivity type of the second carrier transport layer. ### Claim 5 (depends on 1) The element according to claim 1, wherein at least one of a conductivity type of the first carrier transport layer and a conductivity type of the second carrier transport layer is an i-type. ### Claim 6 (depends on 1) The element according to claim 1, wherein the first carrier transport material and the second carrier transport material contain an identical cation. ### Claim 7 (depends on 1) The element according to claim 1, wherein the first electrode is a cathode, the first carrier transport material is an oxide, and an element most contained as a cation in the first carrier transport material is any one of Zn, Ti, Sr, and Sn. ### Claim 8 (depends on 1) The element according to claim 1, wherein the second carrier transport material is an oxide, and an element most contained as a cation in the second carrier transport material is any one of Zn, Ti, Sr, and Sn. ### Claim 9 (depends on 1) The element according to claim 1, wherein the first electrode is an anode, the first carrier transport material is an oxide, and an element most contained as a cation in the first carrier transport material is Ni or Cu. ### Claim 10 (depends on 1) An electronic device comprising the element according to claim 1. ### Claim 11 An element comprising: a first electrode; a second electrode; a quantum dot phosphor layer located between the first electrode and the second electrode and including quantum dot phosphor particles; a first carrier transport layer located between the first electrode and the quantum dot phosphor layer and formed of a continuous film of a first carrier transport material; and a mixed layer located between the first carrier transport layer and the quantum dot phosphor layer and including (i) the quantum dot phosphor particles, and (ii) nanoparticles formed of a second carrier transport material, wherein, when in the mixed layer, a center of one of the nanoparticles closest to the quantum dot phosphor layer is defined as a nanoparticle first center, and a center of one of the nanoparticles in contact with the first carrier transport layer is defined as a nanoparticle second center, and wherein as the quantum dot phosphor particles included in the mixed layer, a first quantum dot phosphor particle having a center located closer to the first carrier transport layer, as compared with the nanoparticle first center, is present, and a second quantum dot phosphor particle occupying at least a part of a space located closer to the first carrier transport layer, as compared with the nanoparticle second center, is present. ### Claim 12 (depends on 11) The element according to claim 11, wherein the first carrier transport material is a compound semiconductor. ### Claim 13 (depends on 11) The element according to claim 11, wherein the second carrier transport material is a compound semiconductor. ### Claim 14 (depends on 11) The element according to claim 11, wherein a conductivity type of the first carrier transport layer is identical to a conductivity type of the second carrier transport layer. ### Claim 15 (depends on 11) The element according to claim 11, wherein at least one of a conductivity type of the first carrier transport layer and a conductivity type of the second carrier transport layer is an i-type. ### Claim 16 (depends on 11) The element according to claim 11, wherein the first carrier transport material and the second carrier transport material contain an identical cation. ### Claim 17 (depends on 11) The element according to claim 11, wherein the first electrode is a cathode, the first carrier transport material is an oxide, and an element most contained as a cation in the first carrier transport material is any one of Zn, Ti, Sr, and Sn. ### Claim 18 (depends on 11) The element according to claim 11, wherein the second carrier transport material is an oxide, and an element most contained as a cation in the second carrier transport material is any one of Zn, Ti, Sr, and Sn. ### Claim 19 (depends on 11) The element according to claim 11, wherein the first electrode is an anode, the first carrier transport material is an oxide, and an element most contained as a cation in the first carrier transport material is Ni or Cu. ### Claim 20 (depends on 11) An electronic device comprising the element according to claim 11.