# US 12,224,373 B2 · Micro-LED structure and micro-LED chip including same

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- Number: US 12,224,373 B2
- Document ID: US12224373B2
- Status: Granted
- Kind: B2
- Application number: 17/562,404
- Filed: 2021-12-27
- Published: 2022-06-30
- Granted: 2025-02-11
- Earliest claimed: 2020-12-28
- Assignees: Jade Bird Display (Shanghai) Limited
- Applicants: Jade Bird Display (Shanghai) Limited
- Inventors: Qiming Li; Yuankun Zhu; Anle Fang; Deshuai Liu; Jian Guo
- Web page: https://patentgrep.com/patent/US12224373B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/81: Bodies
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors
- H10H 20/8162: {Current-blocking structures}
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/831: characterised by their shape
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/851: Wavelength conversion means
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/856: Reflecting means
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30)
- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10W 90/00: Package configurations
- H10H 20/83: Electrodes
- H10H 20/853: characterised by their shape
- H10H 29/8325: {Reflective materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

## Claims

### Claim 1

A micro-LED chip including multiple micro-LEDs, wherein,
at least one micro-LED of the multiple micro-LEDs comprises:
a first type conductive layer;
a second type conductive layer stacked on the first type conductive layer; and
a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs, and
the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs, wherein a bottom surface of the metal layer is horizontally aligned with a bottom surface of the second type conductive layer.

### Claim 2 (depends on 1)

The micro-LED chip according to claim 1, wherein the metal layer is formed on a surface of the light emitting layer and does not touch the first type conductive layer or the second type conductive layer.

### Claim 3 (depends on 1)

The micro-LED chip according to claim 1, wherein a lateral dimensional value of the metal layer is not more than a distance between an edge of the light emitting layer and an edge of the first type conductive layer, or
the lateral dimensional value of the metal layer is not more than a distance between the edge of the light emitting layer and an edge of the second type conductive layer.

### Claim 4 (depends on 3)

The micro-LED chip according to claim 3, wherein the lateral dimensional value of the metal layer is from 2 nm to 10 um.

### Claim 5 (depends on 1)

The micro-LED chip according to claim 1, wherein a center point of the metal layer is aligned with a center point between the adjacent micro-LEDs.

### Claim 6 (depends on 1)

The micro-LED chip according to claim 1, wherein a center point of the metal layer is near one of the adjacent micro-LEDs.

### Claim 7 (depends on 1)

The micro-LED chip according to claim 1, wherein the metal layer comprises a plurality of metal layers, and the plurality of metal layers are arranged in parallel along a surface of the light emitting layer.

### Claim 8 (depends on 1)

The micro-LED chip according to claim 1, wherein a material of the metal layer includes a high work function metal material which matches a material of the light emitting layer.

### Claim 9 (depends on 8)

The micro-LED chip according to claim 8, wherein the high work function metal material includes at least one of gold, platinum, palladium, beryllium, cobalt, nickel, or tungsten.

### Claim 10 (depends on 1)

The micro-LED chip according to claim 1, wherein the light emitting layer is continuously formed on the micro-LED chip.

### Claim 11 (depends on 1)

The micro-LED chip according to claim 1, wherein the multiple micro-LEDs share the light emitting layer.

### Claim 12 (depends on 1)

The micro-LED chip according to claim 1, further comprising:
a top spacer formed on a top surface of the light emitting layer;
a bottom spacer formed on a bottom surface of the light emitting layer,
wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and
an edge of the bottom spacer is aligned with the edge of the light emitting layer.

### Claim 13 (depends on 12)

The micro-LED chip according to claim 12, wherein a thickness of the top spacer is larger than a thickness of the light emitting layer, and a thickness of the bottom spacer is larger than the thickness of the light emitting layer.

### Claim 14 (depends on 12)

The micro-LED chip according to claim 12, further comprising, in the at least one micro-LED, a microlens formed on the second type conductive layer and on a top surface of the top spacer.

### Claim 15 (depends on 1)

The micro-LED chip according to claim 1, wherein a top area of the first type conductive layer is larger than a bottom area of the first type conductive layer, and a top area of the second type conductive layer is smaller than a bottom area of the second type conductive layer.

### Claim 16 (depends on 1)

The micro-LED chip according to claim 1, wherein the light emitting layer includes only one pair of quantum well layers, or multiple pairs of quantum well layers.

### Claim 17 (depends on 1)

The micro-LED chip according to claim 1, wherein the at least one micro-LED further comprises a reflective structure formed surrounding the first type conductive layer.

### Claim 18 (depends on 17)

The micro-LED chip according to claim 17, wherein, in the at least one micro-LED, the reflective structure is attached on a sidewall surface of the first type conductive layer, and
the at least one micro-LED further comprises a bottom connection structure formed under the first type conductive layer and electrically connected with the first type conductive layer.

### Claim 19 (depends on 18)

The micro-LED chip according to claim 18, further comprising a substrate under the first type conductive layer, and electrically connected with the bottom connection structure by a connecting pad in the substrate.

### Claim 20 (depends on 18)

The micro-LED chip according to claim 18, wherein the bottom connection structure is made of a reflective and electrically conductive material.