# US 12,224,367 B2 · Solar cell, multi-junction solar cell, solar cell module, and solar power generation system

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- Number: US 12,224,367 B2
- Document ID: US12224367B2
- Status: Granted
- Kind: B2
- Application number: 16/288,932
- Filed: 2019-02-28
- Published: 2020-03-19
- Granted: 2025-02-11
- Earliest claimed: 2018-09-19
- Assignees: Kabushiki Kaisha Toshiba; Toshiba Energy Systems & Solutions Corporation
- Applicants: Kabushiki Kaisha Toshiba; Toshiba Energy Systems & Solutions Corporation
- Inventors: Soichiro Shibasaki; Mutsuki Yamazaki; Naoyuki Nakagawa; Sara Yoshio; Kazushige Yamamoto
- Web page: https://patentgrep.com/patent/US12224367B2

## CPC

- H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells
- H02S 10/20: Systems characterised by their energy storage means (H02S40/38 takes precedence)
- H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers
- H10F 10/19: Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
- H10F 19/00: Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F 19/31: having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F 77/12: Active materials
- H10F 77/211: {for photovoltaic cells}
- H10W 90/00: Package configurations
- G01N 21/6489: {Photoluminescence of semiconductors}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02E 70/30: Systems combining energy storage with energy generation of non-fossil origin
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. In a case where a photoluminescence spectrum of the photoelectric conversion layer is measured at a temperature of 100 K or lower, a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A≤100B).

## Claims

### Claim 1

A solar cell comprising:
a substrate;
a first transparent electrode;
a second transparent electrode;
a p-type photoelectric conversion layer containing cuprous oxide disposed between the first transparent electrode and the second transparent electrode;
an n-type layer disposed between the p-type photoelectric conversion layer and the second transparent electrode, wherein
the p-type photoelectric conversion layer has a thickness of 500 nm or more and 0.3 mm or less,
at a temperature of 100 K or lower, the p-type photoelectric conversion layer has a photoluminescence spectrum exhibiting a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less and that is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A≤100B), and wherein
the p-type photoelectric conversion layer as analyzed by X-ray photoelectron spectroscopy,
in a peak of the cuprous oxide observed in a range in which a binding energy value is 930 eV or more and 934 eV or less,
exhibits a first intersection and a second intersection where a horizontal line passing through a value of ⅔ of a peak top of the cuprous oxide intersects with the peak of the cuprous oxide, and
exhibits a third intersection where a perpendicular line extending from the peak top to the horizontal line intersects with the horizontal line, wherein
an average of ratios of a difference between a first length formed by the first intersection and the third intersection and a second length formed by the second intersection and the third intersection is 15% or less,
the first electrode is formed over the substrate, and
the p-type photoelectric conversion layer is formed over the first electrode.

### Claim 2 (depends on 1)

The solar cell according to claim 1, wherein
the first maximum value (A) is 30 times or less of the second maximum value (B) (A≤30B).

### Claim 3 (depends on 1)

The solar cell according to claim 1, wherein the average of ratios of the difference is 10% or less.

### Claim 4 (depends on 1)

The solar cell according to claim 1, wherein the p-type photoelectric conversion layer is in direct contact with the first transparent electrode, and
a surface of the p-type photoelectric conversion layer opposite to a surface which is in direct contact with the first transparent electrode is in direct contact with the n-type layer.

### Claim 5 (depends on 1)

The solar cell according to claim 1, wherein
the first electrode is formed on the substrate, and
the p-type photoelectric conversion layer is formed on the first electrode.

### Claim 6 (depends on 1)

The solar cell according to claim 1, wherein
the first electrode is formed on and in contact with the substrate, and
the p-type photoelectric conversion layer is formed on and in contact with the first electrode.

### Claim 7 (depends on 1)

The solar cell according to claim 1, wherein
the first electrode is formed on and in direct contact with the substrate, and
the p-type photoelectric conversion layer is formed on and in direct contact with the first electrode.

### Claim 8 (depends on 1)

A solar cell module using the solar cell according to claim 1.

### Claim 9 (depends on 8)

A solar power generation system for performing solar power generation using the solar cell module according to claim 8.

### Claim 10 (depends on 1)

A multi-junction solar cell using the solar cell according to claim 1.

### Claim 11 (depends on 10)

A solar cell module using the multi-junction solar cell according to claim 10.

### Claim 12 (depends on 11)

A solar power generation system for performing solar power generation using the solar cell module according to claim 11.