Method for treating a stack obtained during the manufacture of a heterojunction photovoltaic cell
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJordi Veirman, Julie Stendera
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Abstract
A method for treating a stack includes a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, the method including exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 12 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 200 kW/m2.
Claims19
A method for treating a stack comprising a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, said method comprising exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 8 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 300 kW/m2.
A method for treating a stack comprising a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, said method comprising exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 12 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 200 kW/m2, wherein the stack is maintained at a temperature less than 200° C. during the exposing of the stack to electromagnetic radiation.
A method for manufacturing a heterojunction photovoltaic cell, comprising:
- forming a stack by depositing a passivation layer of hydrogenated amorphous silicon on a face a of a substrate of n-doped crystalline silicon;
- exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 8 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 300 kW/m2.
Dependencies are inferred from the claim text.