# US 12,224,362 B2 · Substrates having a broadband antireflection layer and methods of forming a broadband antireflection layer

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- Number: US 12,224,362 B2
- Document ID: US12224362B2
- Status: Granted
- Kind: B2
- Application number: 18/203,436
- Filed: 2023-05-30
- Published: 2024-01-25
- Granted: 2025-02-11
- Earliest claimed: 2017-12-21
- Assignees: University of Florida Research Foundation, Inc.
- Applicants: University of Florida Research Foundation, Inc.
- Inventors: Peng Jiang; Zhuxiao Gu; Ruwen Tan
- Web page: https://patentgrep.com/patent/US12224362B2

## CPC

- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- G02B 1/118: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

Embodiments of the present disclosure provide for methods of making substrates having an (AR) antireflective layer, substrates having an antireflective layer, devices including a substrate having an antireflective layer, and the like. The AR layer can have a total specular reflection of less than 10% at a wavelength of about 400-800 nm, and a height of about 500-1000 nm.

## Claims

### Claim 1

A structure comprising:
a base substrate having a polyimide substrate disposed over a first area of the base substrate and second area having a broadband antireflective layer that has a total specular reflection of less than 10% at a wavelength of about 400 to about 800 nm, wherein the broadband antireflective layer has a plurality of pillars that are not uniformly and are randomly spaced apart from one another, wherein the plurality of pillars are non-uniformly sized, wherein the broadband antireflective layer has a height of about 500 nm to about 1000 nm, wherein the plurality of pillars that have a spacing of about 10 nm to 300 nm between a pair of pillars as measured from pillar base to pillar base, and at least one pillar has a diameter at the base of about 50 to 300 nm.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the base substrate is selected from the group consisting of: a silicon substrate, a gallium arsenide (GaAs) substrate, a gallium antimonide (GaSb) substrate, indium phosphide (InP), and gallium nitride (GaN).

### Claim 3 (depends on 2)

The structure of claim 2, wherein the base substrate is a crystalline silicon.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the broadband antireflective layer has a total specular reflection of less than 5% at wavelength of about 450 to about 800 nm.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the broadband antireflective layer has a total specular reflection of less than 3% at wavelength of about 500 to about 750 nm.