# US 12,224,353 B2 · Thin-film transistor circuit and method of manufacturing thin-film transistor circuit

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- Number: US 12,224,353 B2
- Document ID: US12224353B2
- Status: Granted
- Kind: B2
- Application number: 17/521,261
- Filed: 2021-11-08
- Published: 2022-05-12
- Granted: 2025-02-11
- Earliest claimed: 2020-11-11
- Assignees: Wuhan Tianma Micro-Electronics Co., Ltd.
- Applicants: Wuhan Tianma Micro-Electronics Co., Ltd.
- Inventors: Kazushige Takechi
- Web page: https://patentgrep.com/patent/US12224353B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/1216: {the pixel elements being capacitors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A polysilicon layer includes a polysilicon part of a polysilicon thin-film transistor. A first conductor layer includes a first gate electrode part of the polysilicon thin-film transistor. The first insulator layer includes a first insulator part located between the first gate electrode part and the polysilicon part. The oxide semiconductor layer includes an oxide semiconductor part of an oxide semiconductor thin-film transistor. The second conductor layer includes a second gate electrode part of the oxide semiconductor thin-film transistor. The second insulator layer includes a second insulator part located between the second gate electrode part and the oxide semiconductor part. The second insulator layer has a relative permittivity of not less than 8. The entire area of the second insulator layer is covered with the second conductor layer.

## Claims

### Claim 1

A circuit comprising:
a polysilicon thin-film transistor comprising:
a polysilicon layer;
a first conductor layer located above the polysilicon layer; and
a first insulator layer located between the first conductor layer and the polysilicon layer; and
an oxide semiconductor thin-film transistor comprising:
an oxide semiconductor layer;
a second conductor layer located above the oxide semiconductor layer; and
a second insulator layer located between the second conductor layer and the oxide semiconductor layer,
wherein the polysilicon layer includes a polysilicon part of the polysilicon thin-film transistor,
wherein the first conductor layer includes a first gate electrode part of the polysilicon thin-film transistor,
wherein the first insulator layer includes a first insulator part located between the first gate electrode part and the polysilicon part,
wherein the oxide semiconductor layer includes an oxide semiconductor part of the oxide semiconductor thin-film transistor,
wherein the second conductor layer includes a second gate electrode part of the oxide semiconductor thin-film transistor,
wherein the second insulator layer includes a second insulator part located between the second gate electrode part and the oxide semiconductor part,
wherein the second insulator layer has a relative permittivity of not less than 8,
wherein the entire area of the second insulator layer is covered with the second conductor layer,
wherein the first insulator layer has a relative permittivity lower than the relative permittivity of the second insulator layer,
wherein the second conductor layer includes an upper electrode part of a capacitive element, and
wherein the second insulator layer includes an insulator part of the capacitive element,
wherein the second conductor layer of the oxide semiconductor thin-film transistor is above of the upper electrode part of the capacitive element,
wherein the second insulator layer of the oxide semiconductor thin-film transistor is above of the insulator part of the capacitive element.

### Claim 2 (depends on 1)

The circuit according to claim 1,
wherein the oxide semiconductor part includes a channel region and source/drain regions sandwiching the channel region, and
wherein one of the source/drain regions is connected with the first gate electrode part.

### Claim 3 (depends on 1)

The circuit according to claim 1,
wherein the oxide semiconductor part includes a channel region and source/drain regions sandwiching the channel region,
wherein the polysilicon part includes a channel region and source/drain regions sandwiching the channel region, and
wherein one of the source/drain regions of the oxide semiconductor part is connected with one of the source/drain regions of the polysilicon part.

### Claim 4 (depends on 1)

The circuit according to claim 1, further comprising a silicon-based insulator part having an interface with the oxide semiconductor part and another interface with the second insulator part.

### Claim 5 (depends on 1)

The circuit according to claim 1, further comprising an interfacial insulator part having an interface with the oxide semiconductor part and another interface with the second insulator part,
wherein the interfacial insulator part has a relative permittivity of not less than 8, and
wherein a concentration of carbon in the interfacial insulator part is not less than 1×1018 cm−3 and a concentration of carbon in the second insulator part is less than 1×1018 cm−3.

### Claim 6

A circuit comprising:
a polysilicon thin-film transistor comprising:
a polysilicon layer;
a first conductor layer located above the polysilicon layer;
a first insulator layer located between the first conductor layer and the polysilicon layer; and
an oxide semiconductor thin-film transistor comprising:
an oxide semiconductor layer;
a second conductor layer located above the oxide semiconductor layer; and
a second insulator layer located between the second conductor layer and the oxide semiconductor layer,
wherein the polysilicon layer includes a polysilicon part of the polysilicon thin-film transistor,
wherein the first conductor layer includes a first gate electrode part of the polysilicon thin-film transistor,
wherein the first insulator layer includes a first insulator part located between the first gate electrode part and the polysilicon part,
wherein the oxide semiconductor layer includes an oxide semiconductor part of the oxide semiconductor thin-film transistor,
wherein the second conductor layer includes a second gate electrode part of the oxide semiconductor thin-film transistor,
wherein the second insulator layer includes a second insulator part located between the second gate electrode part and the oxide semiconductor part,
wherein the second insulator layer has a relative permittivity of not less than 8,
wherein the entire area of the second insulator layer is covered with the second conductor layer,
wherein the oxide semiconductor part includes a channel region and source/drain regions sandwiching the channel region, and
wherein the oxide semiconductor thin-film transistor includes compound interfacial parts each located above a source/drain region, the compound interfacial parts including constituent elements of the oxide semiconductor part and constituent elements of the second insulator layer and having a resistance lower than a resistance of the channel region,
wherein the second conductor layer of the oxide semiconductor thin-film transistor is above of the upper electrode part of a capacitive element,
wherein the second insulator layer of the oxide semiconductor thin-film transistor is above of the insulator part of the capacitive element.

### Claim 7

A method of manufacturing a circuit, the method comprising:
forming a polysilicon thin-film transistor, wherein the forming the polysilicon thin-film transistor comprises:
forming a polysilicon layer including a polysilicon part of the polysilicon thin-film transistor;
forming a first insulator layer including an insulator part of the polysilicon thin-film transistor on a layer above the polysilicon layer;
forming a first conductor layer including a gate electrode part of the polysilicon thin-film transistor on a layer than above the first insulator layer; and
forming an oxide semiconductor thin-film transistor, wherein the forming the oxide semiconductor thin-film transistor comprises:
forming an oxide semiconductor layer including an oxide semiconductor part of the oxide semiconductor thin-film transistor;
forming a second insulator layer including an insulator part of the oxide semiconductor thin-film transistor on a layer above the oxide semiconductor layer; and
forming a second conductor layer including a gate electrode part of the oxide semiconductor thin-film transistor on a layer above the second insulator layer,
wherein the second insulator layer has a relative permittivity of not less than 8, and
wherein the second conductor layer and the second insulator layer are etched together or the second insulator layer is etched using the second conductor layer as a mask,
wherein the first insulator layer has a relative permittivity lower than the relative permittivity of the second insulator layer,
wherein the second conductor layer includes an upper electrode part of a capacitive element, and
wherein the second insulator layer includes an insulator part of the capacitive element,
wherein the second conductor layer of the oxide semiconductor thin-film transistor is above of the upper electrode part of the capacitive element,
wherein the second insulator layer of the oxide semiconductor thin-film transistor is above of the insulator part of the capacitive element.