# US 12,224,341 B2 · Semiconductor device and method of manufacturing the same

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- Number: US 12,224,341 B2
- Document ID: US12224341B2
- Status: Granted
- Kind: B2
- Application number: 17/400,345
- Filed: 2021-08-12
- Published: 2022-06-02
- Granted: 2025-02-11
- Earliest claimed: 2020-11-30
- Assignees: Hyundai Motor Company; Kia Corporation
- Applicants: Hyundai Motor Company; Kia Corporation
- Inventors: NackYong Joo
- Web page: https://patentgrep.com/patent/US12224341B2

## CPC

- H10D 30/665: {having edge termination structures}
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 64/252: {for vertical or pseudo-vertical devices}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10D 64/516: {the thicknesses being non-uniform}
- H10D 62/8325: {Silicon carbide}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device according to an embodiment of the present disclosure includes: a conductive region, an end region positioned at a portion where the conductive region ends, and a connection region positioned between the conductive region and the end region. The conductive region includes: an n+ type substrate; an n− type layer positioned at the first surface of the n+ type substrate; and a p type region positioned on the n− type layer, and a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and a side wall of the trench positioned at the portion where the conductive region ends is inclined.

## Claims

### Claim 1

A semiconductor device comprising: a conductive region, wherein the conductive region includes:
an n+ type substrate,
an n− type layer positioned at a first surface of the n+ type substrate,
a p type region positioned on the n− type layer, and
a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and
a side wall of the trench positioned at beside a portion where the conductive region ends is inclined;
an end region positioned at the portion where the conductive region ends; and
a connection region positioned between the conductive region and the end region,
wherein a region under the inclined side wall of the trench is filled with an insulating material, and the region under the inclined side wall of the trench is a region surrounded by the inclined side wall, a line extending horizontally at the intersection point of the inclined side wall and the bottom surface of the trench, and a line extending vertically at the intersection of the inclined side wall and a lower gate runner,
wherein a p type end structure is positioned in the n− type layer of the end region, and the p type end structure includes a plurality of regions injected with p type ions, and the regions injected with the p type ions are spaced apart from each other by a predetermined interval, and
the side wall of the trench is inclined from the intersection point of the side wall and the bottom surface of the trench to the intersection of the side wall and the lower gate runner.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein
an angle between a bottom surface of the trench and the inclined side wall is more than 90 degrees to less than 180 degrees.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein
the angle between the bottom surface of the trench and the inclined side wall is greater than 135 degrees to less than 160 degrees.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein
the inclined side wall of the trench has a shape that is concave downward.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein
the inclined side wall of the trench has a shape that is convex upward.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein
the connection region includes:
the n+ type substrate,
the n− type layer positioned in the first surface of the n+ type substrate,
the p type region positioned on the n− type layer,
the lower gate runner positioned on the p type region and connected to the gate electrode,
an end oxide layer positioned on the lower gate runner, and
an upper gate runner positioned on the end oxide layer.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein
the side wall of the trench connecting a bottom surface of the trench and the lower gate runner is inclined.

### Claim 8 (depends on 6)

The semiconductor device of claim 6, wherein
the oxide layer includes a contact hole exposing a part of the lower gate runner, and
the upper gate runner is in contact with the lower gate runner through the contact hole of the oxide layer.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein
the conductive region includes
an oxide layer positioned on the gate electrode, and
a source electrode positioned on the oxide layer and insulated from the gate electrode.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein
the conductive region, the connection region, the end region, or a combination thereof includes a drain electrode positioned on a second surface of the substrate.

### Claim 11

A manufacturing method of a semiconductor device, comprising:
forming an n− type layer on a first surface of an n+ type substrate including a conductive region, an end region positioned at a portion where the conductive region ends, and a connection region positioned between the conductive region and the end region;
forming a p type region on the n− type layer;
etching the n− type layer to form a trench; and
forming a gate electrode in the trench,
wherein in the forming of the trench, a side wall of the trench positioned at the portion where the conductive region ends is etched to be inclined,
wherein the semiconductor device comprises a conductive region,
wherein the conductive region includes an n+ type substrate, an n− type layer positioned at a first surface of the n+ type substrate, a p type region positioned on the n− type layer, and
a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and a side wall of the trench positioned at a portion where the conductive region ends is inclined;
an end region positioned beside the portion where the conductive region ends; and
a connection region positioned between the conductive region and the end region,
wherein a region under the inclined side wall of the trench is filled with an insulating material, and the region under the inclined side wall of the trench is a region surrounded by the inclined side wall, a line extending horizontally at the intersection point of the inclined side wall and the bottom surface of the trench, and a line extending vertically at the intersection of the inclined side wall and a lower gate runner,
wherein a p type end structure is positioned in the n− type layer of the end region, and the p type end structure includes a plurality of regions injected with p type ions, and the regions injected with the p type ions are spaced apart from each other by a predetermined interval, and
the side wall of the trench is inclined from the intersection point of the side wall and the bottom surface of the trench to the intersection of the side wall and the lower gate runner.

### Claim 12 (depends on 11)

The manufacturing method of the semiconductor device of claim 11, wherein after forming the p type region even in the region where the trench will be formed, the p type region and the n− type layer are etched so that the side wall of the trench is inclined.

### Claim 13 (depends on 11)

The manufacturing method of the semiconductor device of claim 11, wherein the forming of the trench includes filling the etched region with an insulating material after etching the region where the trench will be formed, and wet etching the insulating material so that the side wall of the trench is inclined.

### Claim 14 (depends on 11)

The manufacturing method of the semiconductor device of claim 11, further comprising: forming an oxide layer on the gate electrode; and forming a source electrode on the oxide layer.

### Claim 15 (depends on 11)

The manufacturing method of the semiconductor device of claim 11, further comprising forming a drain electrode on a second surface of the n+ type substrate.