# US 12,224,339 B2 · High electron mobility transistor

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- Number: US 12,224,339 B2
- Document ID: US12224339B2
- Status: Granted
- Kind: B2
- Application number: 17/735,100
- Filed: 2022-05-02
- Published: 2022-08-18
- Granted: 2025-02-11
- Earliest claimed: 2019-08-26
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Yu-Ming Hsu; Yu-Chi Wang; Yen-Hsing Chen; Tsung-Mu Yang; Yu-Ren Wang
- Web page: https://patentgrep.com/patent/US12224339B2

## CPC

- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/8164: {comprising only semiconductor materials (potential variation in long-range structurally-disordered materials H10D62/8163)}
- H10D 62/82: Heterojunctions
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 62/343: {Gate regions of field-effect devices having PN junction gates}
- H10D 62/40: Crystalline structures
- H10D 62/854: further characterised by the dopants
- H10D 64/411: {for FETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

## Claims

### Claim 1

A high electron mobility transistor (HEMT), comprising:
an aluminum gallium nitride layer;
a gallium nitride layer disposed below the aluminum gallium nitride layer;
a magnesium oxide layer disposed under the gallium nitride layer;
a source electrode and a drain electrode disposed on the aluminum gallium nitride layer;
a gate electrode disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode; and
a substrate, a nucleation layer, a transition layer and a superlattice disposed below the magnesium oxide layer, wherein the substrate, the nucleation layer, the transition layer and the superlattice are disposed from bottom to top.

### Claim 2 (depends on 1)

The HEMT of claim 1, wherein the magnesium oxide layer directly contacts the gallium nitride layer.

### Claim 3 (depends on 1)

The HEMT of claim 1, wherein a thickness of the magnesium oxide layer is 5 to 10 times greater than a thickness of the gallium nitride layer.

### Claim 4 (depends on 1)

The HEMT of claim 1, wherein the gallium nitride layer contains tensile stress.

### Claim 5 (depends on 1)

The HEMT of claim 1, wherein the aluminum gallium nitride layer contains tensile stress.

### Claim 6 (depends on 1)

The HEMT of claim 1, wherein the nucleation layer, the transition layer and the superlattice independently comprise aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

### Claim 7 (depends on 1)

The HEMT of claim 1, wherein a direction of piezoelectric polarization of the gallium nitride layer is in a direction toward the magnesium oxide layer.