# US 12,224,333 B2 · HEMT with stair-like compound layer at drain

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- Number: US 12,224,333 B2
- Document ID: US12224333B2
- Status: Granted
- Kind: B2
- Application number: 17/842,814
- Filed: 2022-06-17
- Published: 2023-11-30
- Granted: 2025-02-11
- Earliest claimed: 2022-05-26
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Po-Yu Yang
- Web page: https://patentgrep.com/patent/US12224333B2

## CPC

- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/311: {Gate electrodes for field-effect devices}
- H10D 62/343: {Gate regions of field-effect devices having PN junction gates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An HEMT with a stair-like compound layer as a drain includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode, a gate electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed between the source electrode and the drain electrode. A first P-type III-V compound layer is disposed between the drain electrode and the second III-V compound layer. The first P-type III-V compound layer is stair-like.

## Claims

### Claim 1

A high electron mobility transistor (HEMT) with a stair-like compound layer as a drain, comprising: a first III-V compound layer; a second III-V compound layer disposed on the first III-V compound layer, wherein composition of the first III-V compound layer and composition of the second III-V compound layer are different from each other; a source electrode, a gate electrode and a drain electrode disposed on the second III-V compound layer, wherein the gate electrode is disposed between the source electrode and the drain electrode; and a first P-type III-V compound layer disposed between the drain electrode and the second III-V compound layer, wherein the first P-type III-V compound layer has a stair-like shape; wherein steps constituting the stair-like shape go down toward a direction away from the gate electrode.

### Claim 2 (depends on 1)

The HEMT with a stair-like compound layer as a drain of claim 1, wherein the drain electrode contacts the first P-type III-V compound layer, and the drain electrode contacts the second III-V compound layer.

### Claim 3 (depends on 2)

The HEMT with a stair-like compound layer as a drain of claim 2, wherein the first P-type III-V compound layer comprises a plurality of steps, the bottommost step of the plurality of steps comprises a vertical sidewall, and the drain electrode contacts the vertical sidewall.

### Claim 4 (depends on 1)

The HEMT with a stair-like compound layer as a drain of claim 1, wherein Ohmic contact is between the drain electrode and the first P-type III-V compound layer.

### Claim 5 (depends on 1)

The HEMT with a stair-like compound layer as a drain of claim 1, further comprising a second P-type III-V compound layer disposed between the gate electrode and the second III-V compound layer.

### Claim 6 (depends on 1)

The HEMT with a stair-like compound layer as a drain of claim 1, further comprising a third P-type III-V compound layer disposed between the source electrode and the second III-V compound layer, wherein a symmetry line of the gate electrode is perpendicular to a top surface of the second III-V compound layer, based on the symmetry line, the source electrode and the drain electrode are mirror symmetry, and the third P-type III-V compound layer and the first P-type III-V compound layer are mirror symmetry.

### Claim 7

A high electron mobility transistor (HEMT) with a stair-like compound layer as a drain, comprising:
a first III-V compound layer;
a second III-V compound layer disposed on the first III-V compound layer, wherein composition of the first III-V compound layer and composition of the second III-V compound layer are different from each other;
a source electrode, a gate electrode and a drain electrode disposed on the second III-V compound layer, wherein the gate electrode is disposed between the source electrode and the drain electrode, the drain electrode comprises a first part and a second part, material of the first part is different from material of the second part; and
a first P-type III-V compound layer disposed between the drain electrode and the second III-V compound layer, wherein the first P-type III-V compound layer has a stair-like shape, and Schottky contact is between the first part and the first P-type III-V compound layer.

### Claim 8 (depends on 7)

The HEMT with a stair-like compound layer as a drain of claim 7, wherein the first part is disposed between the second part and the first P-type III-V compound layer.

### Claim 9 (depends on 7)

The HEMT with a stair-like compound layer as a drain of claim 7, wherein the first P-type III-V compound layer comprises a plurality of steps, the bottommost step of the plurality of steps comprises a vertical sidewall, the second part contacts the vertical sidewall and the second part contacts the second III-V compound layer.

### Claim 10 (depends on 9)

The HEMT with a stair-like compound layer as a drain of claim 9, wherein Ohmic contact is between the second part and the vertical sidewall.

### Claim 11 (depends on 7)

The HEMT with a stair-like compound layer as a drain of claim 7, further comprising a second P-type III-V compound layer disposed between the gate electrode and the second III-V compound layer.

### Claim 12 (depends on 7)

The HEMT with a stair-like compound layer as a drain of claim 7, further comprising a third P-type III-V compound layer disposed between the source electrode and the second III-V compound layer, wherein a symmetry line of the gate electrode is perpendicular to a top surface of the second III-V compound layer, based on the symmetry line, the source electrode and the drain electrode are mirror symmetry, and the third P-type III-V compound layer and the first P-type III-V compound layer are mirror symmetry.

### Claim 13 (depends on 7)

The HEMT with a stair-like compound layer as a drain of claim 7, wherein steps constituting the stair-like shape go down toward a direction away from the gate electrode.