# US 12,224,317 B2 · Vertical power semiconductor device and manufacturing method

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- Number: US 12,224,317 B2
- Document ID: US12224317B2
- Status: Granted
- Kind: B2
- Application number: 18/220,989
- Filed: 2023-07-12
- Published: 2023-11-02
- Granted: 2025-02-11
- Earliest claimed: 2020-04-09
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Hans-Joachim Schulze; Christian Jaeger; Moriz Jelinek; Daniel Schloegl; Benedikt Stoib
- Web page: https://patentgrep.com/patent/US12224317B2

## CPC

- H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices}
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 12/032: {of vertical IGBTs}
- H10D 12/441: {Vertical IGBTs}
- H10D 30/665: {having edge termination structures}
- H10D 62/112: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers}
- H10D 62/128: {Anode regions of diodes}
- H10D 62/129: {Cathode regions of diodes}
- H10D 62/156: {Drain regions of DMOS transistors}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 62/60: Impurity distributions or concentrations
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/208: {of electrically inactive species}
- H10P 30/21: {of electrically active species}
- H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}
- H10P 36/03: {within silicon bodies}
- H10D 62/834: further characterised by the dopants
- H10P 32/171: {being group IV material}
- H10P 32/18: {Diffusion lifetime killers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a vertical power semiconductor device includes forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms, and forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks, wherein a first impurity peak of the plurality of impurity peaks is set a larger concentration than a second impurity peak of the plurality of impurity peaks, wherein the first impurity peak includes hydrogen and the second impurity peak includes helium.

## Claims

### Claim 1

A method of manufacturing a vertical power semiconductor device, the method comprising:
forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms; and
forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks,
forming a fourth impurity peak in the field stop region by at least one helium ion implantation process,
wherein a first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks,
wherein the first impurity peak includes hydrogen and the second impurity peak includes helium,
wherein the fourth impurity peak is set at a fourth vertical distance from the second main surface, and
wherein the first impurity peak is arranged between the second impurity peak and the fourth impurity peak along the vertical direction.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming the first impurity peak includes at least one proton implantation process having a proton implantation dose ranging from 2×1013 cm−2 to 5×1014 cm−2.

### Claim 3 (depends on 2)

The method of claim 2, wherein forming the second impurity peak includes at least one helium ion implantation process, and wherein the semiconductor body is annealed in a temperature range from 350° C. to 430° C. for 0.5 to 5 hours after the least one proton implantation process and after the at least one helium ion implantation process.

### Claim 4 (depends on 1)

The method of claim 1, wherein a first vertical distance between the first impurity peak and the second impurity peak is set in a range from 0 μm to ±5 μm.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
implanting helium ions into the semiconductor body by a plurality of different ion implantation tilt angles.

### Claim 6 (depends on 1)

The method of claim 1, wherein the platinum is introduced into the drift region at a maximum concentration ranging from 5×1012 cm−3 to 3×1014 cm−3.

### Claim 7 (depends on 1)

The method of claim 1, wherein the drift region has a vertical extension from the field stop region to a pn-junction, and wherein a maximum concentration of hydrogen in the drift region is set smaller than a concentration of platinum along at least 50% of the vertical extension of the drift region.

### Claim 8 (depends on 1)

The method of claim 1, wherein the platinum in the drift region includes platinum-hydrogen complexes and substitutional platinum, and wherein a maximum concentration of the platinum-hydrogen complexes in the drift region is set smaller than a concentration of the substitutional platinum along at least 50% of a vertical extension of the drift region.

### Claim 9 (depends on 1)

The method of claim 1, wherein a maximum hydrogen concentration in the field stop region is at least a factor of 5 larger than a maximum hydrogen concentration in the drift region.

### Claim 10 (depends on 1)

The method of claim 1, wherein a third impurity peak of the plurality of impurity peaks is disposed at a vertical distance from the second main surface that differs from 0 to 300 nm from a second vertical distance of the second impurity peak with respect to the second main surface, wherein the second vertical distance is larger than a third vertical distance between the second main surface and the first impurity peak, and wherein the third impurity peak includes hydrogen.

### Claim 11 (depends on 10)

The method of claim 10, wherein the second vertical distance is larger than the third vertical distance between the second main surface and the first impurity peak.

### Claim 12 (depends on 10)

The method of claim 10, wherein the second vertical distance is smaller than the third vertical distance between the second main surface and the first impurity peak.

### Claim 13 (depends on 10)

The method of claim 10, wherein a concentration of the third impurity peak is larger than a concentration of the second impurity peak.

### Claim 14 (depends on 10)

The method of claim 10, wherein a fourth impurity peak of the plurality of impurity peaks includes helium and is disposed at a fourth vertical distance from the second main surface, and wherein the third vertical distance ranges between the second vertical distance and the fourth vertical distance.

### Claim 15 (depends on 1)

The method of claim 1, wherein a ratio between a peak concentration of the first impurity peak and a peak concentration of the second impurity peak ranges from 10 to 1000.

### Claim 16 (depends on 1)

The method of claim 1, wherein a helium peak concentration of the second impurity peak ranges from 1×1016 cm−3 to 2×1018 cm−3.

### Claim 17 (depends on 1)

The method of claim 1, wherein a maximum concentration of platinum in the drift region ranges from 5×1012 cm−3 to 3×1014 cm−3.

### Claim 18

A method of manufacturing a vertical power semiconductor device, the method comprising:
forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms; and
forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks,
wherein a first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks,
wherein the first impurity peak includes hydrogen and the second impurity peak includes helium
wherein the platinum in the drift region includes platinum-hydrogen complexes and substitutional platinum, and wherein a maximum concentration of the platinum-hydrogen complexes in the drift region is set smaller than a concentration of the substitutional platinum along at least 50% of a vertical extension of the drift region.