# US 12,224,301 B2 · Back side illumination image sensors and electronic device including the same

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- Number: US 12,224,301 B2
- Document ID: US12224301B2
- Status: Granted
- Kind: B2
- Application number: 18/398,981
- Filed: 2023-12-28
- Published: 2024-04-18
- Granted: 2025-02-11
- Earliest claimed: 2018-12-21
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Yun Ki Lee; Jong Hoon Park; Jun Sung Park
- Web page: https://patentgrep.com/patent/US12224301B2

## CPC

- H10F 39/807: {Pixel isolation structures}
- H10F 39/182: {Colour image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8033: {Photosensitive area}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/805: {Coatings}
- H10F 39/8053: {Colour filters}
- H10F 39/8057: {Optical shielding}
- H10K 39/32: Organic image sensors
- H10K 59/13: comprising photosensors that control luminance
- H10K 59/40: OLEDs integrated with touch screens
- H10K 59/65: OLEDs integrated with inorganic image sensors
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

## Claims

### Claim 1

An image sensor comprising:
a substrate;
a photodiode in the substrate;
a light shield grid on the photodiode, the light shield grid including an opening above the photodiode;
a first light shielding filter layer formed above the light shield grid, the first light shielding filter layer including an opening corresponding to the opening of the light shield grid; and
a second light shielding filter layer formed above the first light shielding filter, the second light shielding filter layer including an opening corresponding to the opening of the first light shielding filter;
wherein the first light shielding filter layer is spaced apart from the light shield grid; and
wherein the second light shielding filter layer is spaced apart from the first light shielding filter layer.

### Claim 2 (depends on 1)

The image sensor of claim 1, further comprising a planarization layer formed above the second light shielding filter layer.

### Claim 3 (depends on 2)

The image sensor of claim 2, further comprising a lens above the planarization layer, the lens corresponding to the opening of the light shield grid.

### Claim 4 (depends on 1)

The image sensor of claim 1, wherein a diameter of the opening of the second light shielding filter layer is greater than a diameter of the opening of the first light shielding filter layer.

### Claim 5 (depends on 1)

The image sensor of claim 1, wherein the light shield grid includes a metal material.