# US 12,224,294 B2 · Array substrate, display substrate and display device

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- Number: US 12,224,294 B2
- Document ID: US12224294B2
- Status: Granted
- Kind: B2
- Application number: 18/021,048
- Filed: 2022-02-22
- Published: 2024-04-18
- Granted: 2025-02-11
- Earliest claimed: 2022-02-22
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: Boe Technology Group Co., Ltd.
- Inventors: Yunke Qin; Lei Wang; Yue Tong; Wenhao Tian; Xuan Feng
- Web page: https://patentgrep.com/patent/US12224294B2

## CPC

- H10F 39/8037: {the integrated elements comprising a transistor}
- G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)}
- G02F 1/13318: {Circuits comprising a photodetector}
- G02F 1/13338: {Input devices, e.g. touch panels}
- G02F 1/133388: {with constructional differences between the display region and the peripheral region}
- G02F 1/133512: {Light shielding layers, e.g. black matrix (G02F1/136209 takes precedence)}
- G02F 1/133514: {Colour filters}
- G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making}
- G02F 1/13624: {having more than one switching element per pixel}
- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10F 39/184: {Infrared image sensors}
- G02F 2202/104: poly-Si
- H10F 39/811: {Interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

This disclosure provides an array substrate, including: a display region and a peripheral region. The peripheral region includes at least one first sensor. The first sensor includes a photodiode and a driving circuit which are electrically connected to each other. The photodiode includes: an anode, a cathode and a photosensitive material layer. The array substrate includes: a base substrate, a plurality of thin film transistors, a common electrode and a pixel electrode. The common electrode is reused as an anode of the photodiode. The pixel electrode is reused as a cathode of the photodiode. One of the plurality of thin film transistors is reused as a first transistor of the driving circuit.

## Claims

### Claim 1

An array substrate, comprising: a display region and a peripheral region surrounding the display region, the peripheral region comprising at least one first sensing region;
wherein each of the at least one first sensing region is provided with at least one first sensor, the at least one first sensor comprises a photodiode and a driving circuit electrically connected to each other, the photodiode comprises: an anode and a cathode arranged opposite to each other, and a photosensitive material layer between the anode and the cathode; the array substrate comprises:
a base substrate;
a plurality of thin film transistors on the base substrate, the thin film transistors each comprising a source and a drain;
a common electrode on a side of the plurality of thin film transistors away from the base substrate;
a pixel electrode on a side of the common electrode away from the base substrate, the pixel electrode being electrically connected to the drains of the thin film transistors; wherein,
the common electrode is reused as an anode of the photodiode;
the pixel electrode is reused as a cathode of the photodiode;
the driving circuit comprises at least a first transistor, one thin film transistor of the plurality of thin film transistors is reused as the first transistor, and a drain of the first transistor is electrically connected to the cathode of the photodiode.

### Claim 2 (depends on 1)

The array substrate according to claim 1, wherein the photodiode further comprises a hole transport layer between the anode and the photosensitive material layer, the hole transport layer is made of any one of molybdenum oxide, nickel oxide, copper chloride, copper sulfide and tungsten oxide;
the photodiode further comprises an electron transport layer between the photosensitive material layer and the cathode, and the electron transport layer is made of any one of zinc oxide, zinc tin oxide, indium gallium zinc oxide, zinc aluminum oxide.

### Claim 3 (depends on 1)

The array substrate according to claim 1, wherein the first transistor is an oxide thin film transistor, and an orthographic projection of an active layer of the first transistor onto the base substrate is located within an orthographic projection of a gate of the first transistor onto the base substrate, or the orthographic projection of the gate of the first transistor onto the base substrate is located within the orthographic projection of the active layer of the first transistor onto the base substrate.

### Claim 4 (depends on 1)

The array substrate according to claim 1, wherein the driving circuit further comprises:
a data line and a scanning line, the data line is electrically connected to a source of the first transistor, the scanning line is electrically connected to a gate of the first transistor.

### Claim 5 (depends on 4)

The array substrate according to claim 4, wherein an orthographic projection of the data line onto the base substrate does not overlap with an orthographic projection of the photosensitive material layer of the photodiode onto the base substrate.

### Claim 6 (depends on 4)

The array substrate according to claim 4, wherein the driving circuit further comprises: a second transistor, a third transistor, a reset signal line, a power supply signal line and an initialization signal line;
a source of the second transistor is electrically connected to the power supply signal line, a drain of the second transistor is electrically connected to the drain of the first transistor, and a gate of the second transistor is electrically connected to the cathode of the photodiode;
a source of the third transistor is electrically connected to the initialization signal line, a drain of the third transistor is electrically connected to the cathode of the photodiode, and a gate of the third transistor is electrically connected to the reset signal line;
the anode of the photodiode is connected to a bias voltage.

### Claim 7 (depends on 6)

The array substrate according to claim 6, wherein the bias voltage is 0 V to −6 V.

### Claim 8 (depends on 6)

The array substrate according to claim 6, wherein the third transistor is an oxide thin film transistor, and the second transistor is a low-temperature polysilicon thin film transistor.

### Claim 9 (depends on 6)

The array substrate according to claim 6, wherein an orthographic projection of the photosensitive material layer of the photodiode onto the base substrate does not overlap with an orthographic projection of the first transistor, the second transistor and the third transistor of the driving circuit onto the base substrate.

### Claim 10 (depends on 1)

The array substrate according to claim 1, wherein the array substrate further comprises:
a first passivation layer between the common electrode and the pixel electrode, the first passivation layer comprising a plurality of recesses;
the first passivation layer is on a side of the photosensitive material layer away from the base substrate;
the pixel electrode is bonded to the photosensitive material layer in the recesses.

### Claim 11 (depends on 1)

The array substrate according to claim 1, wherein the common electrode comprises at least a metal layer and a transparent electrically conductive layer arranged in a stack, and the metal layer is made of any one of aluminum, silver, copper, and iron.

### Claim 12 (depends on 1)

The array substrate according to claim 1, wherein the display region comprises at least one second sensing region; each of the at least one second sensing region is provided with at least one second sensor.

### Claim 13

A display substrate, comprising an array substrate and a color film substrate, wherein
the array substrate comprises: a display region and a peripheral region surrounding the display region, the peripheral region comprising at least one first sensing region;
wherein each of the at least one first sensing region is provided with at least one first sensor, the at least one first sensor comprises a photodiode and a driving circuit electrically connected to each other, the photodiode comprises: an anode and a cathode arranged opposite to each other, and a photosensitive material layer between the anode and the cathode; the array substrate comprises:
a base substrate;
a plurality of thin film transistors on the base substrate, the thin film transistors each comprising a source and a drain;
a common electrode on a side of the plurality of thin film transistors away from the base substrate;
a pixel electrode on a side of the common electrode away from the base substrate, the pixel electrode being electrically connected to the drains of the thin film transistors; wherein,
the common electrode is reused as an anode of the photodiode;
the pixel electrode is reused as a cathode of the photodiode;
the driving circuit comprises at least a first transistor, one thin film transistor of the plurality of thin film transistors is reused as the first transistor, and a drain of the first transistor is electrically connected to the cathode of the photodiode;
the color film substrate comprises a black matrix, a peripheral region of the black matrix comprises at least one third sensing region, and the at least one third sensing region is in a one-to-one correspondence with the at least one first sensing region of the array substrate; each of the at least one third sensing region comprises at least one slit, the at least one slit is in a one-to-one correspondence with the at least one first sensor.

### Claim 14 (depends on 13)

The display substrate according to claim 13, wherein the photodiode further comprises a hole transport layer between the anode and the photosensitive material layer, the hole transport layer is made of any one of molybdenum oxide, nickel oxide, copper chloride, copper sulfide and tungsten oxide;
the photodiode further comprises an electron transport layer between the photosensitive material layer and the cathode, and the electron transport layer is made of any one of zinc oxide, zinc tin oxide, indium gallium zinc oxide, zinc aluminum oxide.

### Claim 15 (depends on 13)

The display substrate according to claim 13, wherein the first transistor is an oxide thin film transistor, and an orthographic projection of an active layer of the first transistor onto the base substrate is located within an orthographic projection of a gate of the first transistor onto the base substrate, or the orthographic projection of the gate of the first transistor onto the base substrate is located within the orthographic projection of the active layer of the first transistor onto the base substrate.

### Claim 16 (depends on 13)

The display substrate according to claim 13, wherein the driving circuit further comprises:
a data line and a scanning line, the data line is electrically connected to a source of the first transistor, the scanning line is electrically connected to a gate of the first transistor.

### Claim 17 (depends on 16)

The display substrate according to claim 16, wherein an orthographic projection of the data line onto the base substrate does not overlap with an orthographic projection of the photosensitive material layer of the photodiode onto the base substrate.

### Claim 18 (depends on 16)

The display substrate according to claim 16, wherein the driving circuit further comprises: a second transistor, a third transistor, a reset signal line, a power supply signal line and an initialization signal line;
a source of the second transistor is electrically connected to the power supply signal line, a drain of the second transistor is electrically connected to the drain of the first transistor, and a gate of the second transistor is electrically connected to the cathode of the photodiode;
a source of the third transistor is electrically connected to the initialization signal line, a drain of the third transistor is electrically connected to the cathode of the photodiode, and a gate of the third transistor is electrically connected to the reset signal line;
the anode of the photodiode is connected to a bias voltage.

### Claim 19 (depends on 18)

The display substrate according to claim 18, wherein the bias voltage is 0 V to −6 V.

### Claim 20

A display device, comprising a display substrate, wherein the display substrate comprises an array substrate and a color film substrate,
the array substrate comprises: a display region and a peripheral region surrounding the display region, the peripheral region comprising at least one first sensing region;
wherein each of the at least one first sensing region is provided with at least one first sensor, the at least one first sensor comprises a photodiode and a driving circuit electrically connected to each other, the photodiode comprises: an anode and a cathode arranged opposite to each other, and a photosensitive material layer between the anode and the cathode; the array substrate comprises:
a base substrate;
a plurality of thin film transistors on the base substrate, the thin film transistors each comprising a source and a drain;
a common electrode on a side of the plurality of thin film transistors away from the base substrate;
a pixel electrode on a side of the common electrode away from the base substrate, the pixel electrode being electrically connected to the drains of the thin film transistors; wherein,
the common electrode is reused as an anode of the photodiode;
the pixel electrode is reused as a cathode of the photodiode;
the driving circuit comprises at least a first transistor, one thin film transistor of the plurality of thin film transistors is reused as the first transistor, and a drain of the first transistor is electrically connected to the cathode of the photodiode;
the color film substrate comprises a black matrix, a peripheral region of the black matrix comprises at least one third sensing region, and the at least one third sensing region is in a one-to-one correspondence with the at least one first sensing region of the array substrate; each of the at least one third sensing region comprises at least one slit, the at least one slit is in a one-to-one correspondence with the at least one first sensor.