# US 12,224,282 B2 · Integrated circuit device including metal-oxide semiconductor transistors

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- Number: US 12,224,282 B2
- Document ID: US12224282B2
- Status: Granted
- Kind: B2
- Application number: 18/198,496
- Filed: 2023-05-17
- Published: 2023-09-14
- Granted: 2025-02-11
- Earliest claimed: 2020-09-08
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jinhyeok Song; Mingeun Song
- Web page: https://patentgrep.com/patent/US12224282B2

## CPC

- H10D 84/0158: {the components including FinFETs}
- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 84/834: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.

## Claims

### Claim 1

An integrated circuit device, comprising:
an active region extending in a first direction;
a plurality of fin active patterns extending in parallel on the active region in the first direction;
a plurality of gate patterns spaced apart from each other in the first direction, the plurality of gate patterns extending across the active region and the fin active pattern in a second direction perpendicular to the first direction;
a plurality of isolated gate contact regions, each isolated gate contact region of the plurality of isolated gate contact regions being spaced apart from opposite sides of the active region in the second direction and electrically connected to a first subset of the plurality of gate patterns; and
a plurality of gate cutting regions at sides of the isolated gate contact regions in the first direction,
wherein the plurality of gate cutting regions extend through a second subset of the plurality of gate patterns to thereby cut the second subset of the plurality of gate patterns into discontinuous sections within the active region.

### Claim 2 (depends on 1)

The integrated circuit device as claimed in claim 1, wherein each isolated gate contact region of the plurality of isolated gate contact regions is electrically connected to at least two gate patterns.

### Claim 3 (depends on 1)

The integrated circuit device as claimed in claim 1, wherein:
each gate cutting region of the plurality of gate cutting regions is spaced apart from opposite sides of the active region in the second direction, and
the plurality of gate cutting regions is arranged in the first direction.

### Claim 4 (depends on 1)

The integrated circuit device as claimed in claim 1, wherein each gate cutting region of the plurality of gate cutting regions is alternately arranged with each isolated gate contact region of the plurality of isolated gate contact regions in the first direction.

### Claim 5 (depends on 1)

The integrated circuit device as claimed in claim 1, wherein one arrangement of the plurality of isolated gate contact regions and the plurality of gate cutting regions is symmetrical to another arrangement of the plurality of isolated gate contact regions and the plurality of gate cutting regions with respect to the active region.

### Claim 6 (depends on 1)

The integrated circuit device as claimed in claim 1, further comprising a plurality of active cutting regions on the active region, wherein each active cutting region of the plurality of active cutting regions is at respective sides of the plurality of fin active patterns in the first direction.

### Claim 7 (depends on 6)

The integrated circuit device as claimed in claim 6, wherein both the plurality of gate cutting regions and the plurality of active cutting regions are insulating regions.

### Claim 8 (depends on 6)

The integrated circuit device as claimed in claim 6, wherein the plurality of gate cutting regions and the plurality of active cutting regions are arranged in a line in the second direction.

### Claim 9 (depends on 8)

The integrated circuit device as claimed in claim 8, wherein one arrangement of the plurality of gate cutting regions and the plurality of active cutting regions is symmetrical to another arrangement of the plurality of gate cutting regions and the plurality of active cutting regions with respect to the first subset of the plurality of gate patterns.

### Claim 10 (depends on 6)

The integrated circuit device as claimed in claim 6, wherein a width in the second direction of the plurality of active cutting regions is greater than a width in the second direction of the active region.

### Claim 11 (depends on 6)

The integrated circuit device as claimed in claim 6, wherein a length in the first direction of the plurality of gate cutting regions is greater than a length in the first direction of the plurality of active cutting regions.

### Claim 12 (depends on 6)

The integrated circuit device as claimed in claim 6, wherein a length in the first direction of the plurality of isolated gate contact regions is greater than a length in the first direction of the plurality of active cutting regions.

### Claim 13 (depends on 6)

The integrated circuit device as claimed in claim 6, further comprising a pair of combined gate cutting regions, wherein each combined gate cutting region of the pair of combined gate cutting regions is spaced apart in the second direction from the active region therebetween and extends in parallel in the first direction.

### Claim 14 (depends on 13)

The integrated circuit device as claimed in claim 13, wherein a distance between the pair of combined gate cutting regions region and the active region is longer than a distance between the pair of combined gate cutting regions and the plurality of gate cutting regions.

### Claim 15 (depends on 13)

The integrated circuit device as claimed in claim 13, wherein the first subset of the plurality of gate patterns continuously extend from a side of one combined gate cutting region to a side of another combined gate cutting region in the second direction.

### Claim 16 (depends on 13)

The integrated circuit device as claimed in claim 13, wherein the second subset of the plurality of gate patterns are cut by the plurality of gate cutting regions and the plurality of active cutting regions and discontinuously extend from a side of one combined gate cutting region to a side of another combined gate cutting region in the second direction.

### Claim 17

An integrated circuit device, comprising a unit cell array including multi transistors including:
an active region extending in a first direction;
a plurality of fin active patterns extending in parallel on the active region in the first direction;
a plurality of gate patterns spaced apart from each other in the first direction, the plurality of gate patterns extending across the active region and the plurality of fin active patterns in a second direction perpendicular to the first direction;
a plurality of isolated gate contact regions, the active region being therebetween and spaced apart therefrom, wherein the plurality of isolated gate contact regions is electrically connected to a first subset of the plurality of gate patterns; and
a plurality of gate cutting regions at sides of the plurality of isolated gate contact regions in the first direction,
wherein the plurality of gate cutting regions extend through a second subset of the plurality of gate patterns to thereby cut the second subset of the plurality of gate patterns into discontinuous sections within the active region.

### Claim 18 (depends on 17)

The integrated circuit device as claimed in claim 17, wherein:
the active region is spaced apart from and between two pairs of gate cutting regions of the plurality of gate cutting regions, and
the plurality of isolated gate contact regions is between each pair of gate cutting regions of the plurality of gate cutting regions.

### Claim 19 (depends on 17)

The integrated circuit device as claimed in claim 17, wherein each isolated gate contact region of the plurality of isolated gate contact regions is electrically connected to at least two gate patterns of the plurality of gate patterns.

### Claim 20 (depends on 17)

The integrated circuit device as claimed in claim 17, wherein the plurality of gate cutting regions and the plurality of isolated gate contact regions are alternately arranged in the first direction.

### Claim 21 (depends on 20)

The integrated circuit device as claimed in claim 20, wherein one arrangement of the plurality of isolated gate contact regions and the plurality of gate cutting regions is symmetrical to another arrangement of the plurality of isolated gate contact regions and the plurality of gate cutting regions with respect to the active region.

### Claim 22 (depends on 17)

The integrated circuit device as claimed in claim 17, the unit cell array further includes a pair of active cutting regions on the active region, wherein the first subset of the plurality of gate patterns are spaced apart from and between the pair of active cutting regions.

### Claim 23 (depends on 22)

The integrated circuit device as claimed in claim 22, wherein one arrangement of the plurality of gate cutting regions and the pair of active cutting regions is symmetrical to another arrangement of the plurality of gate cutting regions and the pair of active cutting regions with respect to the first subset of the plurality of gate patterns.

### Claim 24 (depends on 22)

The integrated circuit device as claimed in claim 22, further comprising a pair of combined gate cutting regions,
wherein:
the pair of combined gate cutting regions extends in parallel in the first direction, and
the unit cell array is spaced apart from and between the pair of combined gate cutting regions.

### Claim 25 (depends on 24)

The integrated circuit device as claimed in claim 24, wherein a distance between the pair of combined gate cutting regions and the active region is longer than a distance between the pair of combined gate cutting regions and the plurality of gate cutting regions.

### Claim 26 (depends on 24)

The integrated circuit device as claimed in claim 24, wherein the first subset of the plurality of gate patterns continuously extend from a side of one combined gate cutting region of the pair of combined gate cutting regions to a side of another combined gate cutting region of the pair of combined gate cutting regions in the second direction.

### Claim 27 (depends on 24)

The integrated circuit device as claimed in claim 24, wherein the second subset of the plurality of gate patterns are cut by the plurality of gate cutting regions and the pair of active cutting regions and discontinuously extend from a side of one combined gate cutting region of the pair of combined gate cutting regions to a side of another combined gate cutting region of the pair of combined gate cutting regions in the second direction.