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US 12,224,274 B2Granted
Micro light-emitting diode display panel and manufacturing method therefor
AssigneeBoe Technology Group Co., Ltd.
InventorYuju Chen
Life of this patent
Estimating the term…
Abstract
A manufacturing method for a micro light-emitting diode (LED) display panel includes: providing a base substrate carrying a plurality of LED dies, each LED die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer, the first semiconductor layer being bonded with the base substrate through a sacrificial layer, a material of the sacrificial layer being decomposable under laser irradiation; providing a backplane having a plurality of bonding structures; bonding at least some LED dies of the plurality of LED dies to at least some of the plurality of bonding structures through respective first conductive layers; and peeling each of the at least some LED dies from the base substrate through laser lift-off.
Claims13
A manufacturing method for a micro light-emitting diode display panel, the manufacturing method comprising:
- providing a base substrate carrying a plurality of light-emitting diode dies, each light-emitting diode die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer that are formed on the base substrate and sequentially arranged in a direction away from the base substrate, wherein the first semiconductor layer is bonded with the base substrate through a sacrificial layer, a material of the sacrificial layer is decomposable under laser irradiation;
- providing a backplane having a plurality of bonding structures;
- bonding at least some light-emitting diode dies of the plurality of light-emitting diode dies to at least some of the plurality of bonding structures through respective first conductive layers;
- and
- peeling each of the at least some light-emitting diode dies from the base substrate through laser lift-off;
- wherein
- peeling each of the at least some light-emitting diode dies from the base substrate through the laser lift-off includes:
- performing laser ablation on the sacrificial layer corresponding to each of the at least some light-emitting diode dies to separate the at least some light-emitting diode dies from the base substrate;
- performing the laser ablation on the sacrificial layer corresponding to each of the at least some light-emitting diode dies to separate the at least some light-emitting diode dies from the base substrate includes:
- covering remaining light-emitting diode dies of the plurality of light-emitting diode dies other than the at least some light-emitting diode dies;
- and irradiating each of the at least some light-emitting diode dies from a side, away from the plurality of light-emitting diode dies, of the base substrate by using laser with a preset irradiation frequency in a preset ambient atmosphere to decompose the sacrificial layer under irradiation of the laser, so that the at least some light-emitting diode dies are separated from the base substrate;
- and
- the manufacturing method further includes:
- forming an electrode pattern on a side, away from the backplane, of a first semiconductor layer of each of the at least some light-emitting diode dies, the electrode pattern being formed in an edge region of a light-emitting surface of the light-emitting diode die;
- and
- etching a surface, away from a light-emitting material layer, of the first semiconductor layer of the light-emitting diode die by using the electrode pattern as a mask to form at least one depression in a middle region of the surface of the first semiconductor layer of the light-emitting diode die.
13 more elements
A micro light-emitting diode display panel, comprising:
- a backplane having a plurality of bonding structures;
- and
- a plurality of light-emitting diode dies disposed on the backplane and bonded with at least some bonding structures in the backplane, each light-emitting diode die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer that are sequentially disposed in a direction proximate to the backplane;
- wherein
- each light-emitting diode die is bonded with a single bonding structure of the at least some bonding structures through the first conductive layer;
- a surface, away from the first conductive layer, of each light-emitting diode die is a light-emitting surface, the light-emitting surface has a middle region and an edge region surrounding the middle region, the middle region has at least one depression formed therein;
- a longitudinal section of each depression is in a shape of an arc, a letter V, or an inverted trapezoid, the longitudinal section of each depression is perpendicular to a plane where the backplane is located;
- the at least one depression includes one depression;
- or the at least one depression includes a plurality of depressions sequentially arranged in a first direction, the first direction is parallel to both the plane where the backplane is located and the longitudinal section of each depression;
- a dimension of each light-emitting diode die in a second direction increases in the first direction;
- or a dimension of each light-emitting diode die in a second direction increases and then decreases in the first direction;
- wherein the second direction is perpendicular to the first direction and parallel to the plane where the backplane is located;
- and
- a cross section of each light-emitting diode die is in a shape of a trapezoid or a circle, a first base and a second base of the trapezoid are sequentially arranged in the first direction, and the cross section is parallel to the plane where the backplane is located.
11 more elements
Dependencies are inferred from the claim text.