# US 12,224,273 B2 · Image display device manufacturing method and image display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,273 B2 - Document ID: US12224273B2 - Status: Granted - Kind: B2 - Application number: 17/735,432 - Filed: 2022-05-03 - Published: 2022-08-18 - Granted: 2025-02-11 - Earliest claimed: 2019-11-11 - Assignees: Nichia Corporation - Applicants: Nichia Corporation - Inventors: Hajime Akimoto - Web page: https://patentgrep.com/patent/US12224273B2 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 90/00: Package configurations - G09F 9/00: Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements (in which the variable information is permanently attached to a movable support G09F11/00; abacus G06C1/00; slide-rules G06G1/00) - G09F 9/30: in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00) - G09F 9/33: being semiconductor devices, e.g. diodes - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/018: {Bonding of wafers} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/81: Bodies - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/851: Wavelength conversion means - H10H 20/856: Reflecting means - H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers} - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 90/10: Configurations of laterally-adjacent chips - H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL - H10W 90/792: {between multiple chips} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS ## Abstract A method of manufacturing an image display device includes: providing a semiconductor growth substrate comprising a semiconductor layer; providing a circuit substrate comprising: a circuit element, a first wiring layer, and a first insulating film; forming a first metal layer that is located on the first insulating film and is electrically connected to the first wiring layer; bonding the semiconductor growth substrate to the circuit substrate and electrically connecting the first metal layer to the semiconductor layer; etching the semiconductor layer to form a light-emitting element; etching the first metal layer to form a plug electrically connected to the light-emitting element; forming a second insulating film covering the plug, the light-emitting element, and the first insulating film; removing a portion of the second insulating film to expose a light-emitting surface of the light-emitting element; and forming a second wiring layer electrically connected to the light-emitting surface. ## Claims ### Claim 1 A method of manufacturing an image display device, the method comprising: providing a semiconductor growth substrate comprising a semiconductor layer, wherein the semiconductor layer comprises a light-emitting layer and is grown on a crystal growth substrate; providing a circuit substrate comprising: a circuit element located on a light-transmitting substrate, a first wiring layer located on the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a first metal layer that is located on the first insulating film and is electrically connected to the first wiring layer; bonding the semiconductor growth substrate to the circuit substrate and electrically connecting the first metal layer to the semiconductor layer; etching the semiconductor layer to form a light-emitting element; etching the first metal layer to form a plug electrically connected to the light-emitting element; forming a second insulating film covering the plug, the light-emitting element, and the first insulating film; removing a portion of the second insulating film to expose a light-emitting surface at a side opposite to a surface of the light-emitting element on a first insulating film side; and forming a second wiring layer electrically connected to the light-emitting surface. ### Claim 2 (depends on 1) The method according to claim 1, wherein the step of bonding the semiconductor growth substrate to the circuit substrate comprises bonding a plurality of the semiconductor growth substrates to one circuit substrate. ### Claim 3 (depends on 2) The method according to claim 2, wherein, in the step of etching the semiconductor layer to form a light-emitting element, the light-emitting element is formed at a position distant from each end portion of the plurality of semiconductor growth substrates. ### Claim 4 (depends on 1) The method according to claim 1, wherein the light-transmitting substrate is a glass substrate. ### Claim 5 (depends on 4) The method according to claim 4, further comprising: after bonding the semiconductor growth substrate to the circuit substrate, removing the glass substrate; wherein: the circuit substrate comprises a flexible substrate located between the glass substrate and the circuit element. ### Claim 6 (depends on 1) The method according to claim 1, further comprising, before the step of bonding the semiconductor growth substrate to the circuit substrate, forming a second metal layer on the semiconductor layer. ### Claim 7 (depends on 6) The method according to claim 6, further comprising: before the step of forming the second metal layer, forming a conductive layer on the semiconductor layer; wherein: in the step of forming the second metal layer, the second metal layer is formed on the conductive layer and is light-reflective. ### Claim 8 (depends on 6) The method according to claim 6, further comprising, after the step of bonding the semiconductor growth substrate to the circuit substrate, processing the second metal layer to form a third wiring layer. ### Claim 9 (depends on 1) The method according to claim 1, wherein the crystal growth substrate comprises silicon or sapphire. ### Claim 10 (depends on 1) The method according to claim 1, wherein the semiconductor layer comprises a gallium nitride compound semiconductor. ### Claim 11 (depends on 1) The method according to claim 1, further comprising forming a wavelength conversion member on the light-emitting element. ### Claim 12 A method of manufacturing an image display device, the method comprising: providing a semiconductor growth substrate comprising a semiconductor layer, wherein the semiconductor layer comprises a light-emitting layer and is grown on a crystal growth substrate; providing a circuit substrate comprising: a circuit element located on a light-transmitting substrate, a first wiring layer located on the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a plug that is located on the first insulating film and electrically connected to the first wiring layer; bonding the semiconductor growth substrate to the circuit substrate and electrically connecting the plug to the semiconductor layer; etching the semiconductor layer to form a light-emitting element; forming a second insulating film covering the plug, the light-emitting element, and the first insulating film; removing a portion of the second insulating film to expose a light-emitting surface at a side opposite to a surface of the light-emitting element on a first insulating film side; and forming a second wiring layer electrically connected to the light-emitting surface.