# US 12,224,250 B2 · Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method

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- Number: US 12,224,250 B2
- Document ID: US12224250B2
- Status: Granted
- Kind: B2
- Application number: 18/328,892
- Filed: 2023-06-05
- Published: 2023-10-12
- Granted: 2025-02-11
- Earliest claimed: 2020-03-26
- Assignees: Shibaura Mechatronics Corporation
- Applicants: Shibaura Mechatronics Corporation
- Inventors: Hisashi Nishigaki; Atsushi Fujita; Shohei Tanabe; Yoshinao Kamo; Shigeki Matsunaka
- Web page: https://patentgrep.com/patent/US12224250B2

## CPC

- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- C23C 14/3464: {using more than one target (C23C14/56 takes precedence)}
- H01F 10/265: {Magnetic multilayers non exchange-coupled (H01F10/32 takes precedence)}
- H01F 10/30: characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)}
- H05K 9/0088: {comprising a plurality of shielding layers; combining different shielding material structure}
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 42/287: {materials for magnetic shielding, e.g. ferromagnetic materials}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/014: {using batch processing}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

## Claims

### Claim 1

A film formation apparatus,
the apparatus being configured to form an electromagnetic wave attenuator, the attenuator including a first structure body,
the first structure body including
a first member in which a plurality of first magnetic layers and a plurality of first nonmagnetic layers are alternately stacked, and
a second member in which a plurality of second magnetic layers and a plurality of second nonmagnetic layers are alternately stacked,
a thickness of one of the plurality of first magnetic layers being greater than a thickness of one of the plurality of second magnetic layers,
the apparatus comprising:
a container configured to maintain an atmosphere depressurized from atmospheric pressure;
a first film formation part, a second film formation part, and a third film formation part, the first, second, and third film formation parts being provided in the container, the first, second, and third film formation parts including a sputter source to form the electromagnetic wave attenuator by depositing a film formation material on a processing body by sputtering;
a transfer part provided in the container, the transfer part being configured to circulatively transfer the processing body in a circumferential trajectory to the first film formation part, the second film formation part, and the third film formation part; and
a controller configured to control the first, second and third film formation parts, and the transfer part,
when forming one of the plurality of first magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part and the second film formation part,
cause the first film formation part to form a part of the one of the plurality of first magnetic layers, and cause the second film formation part to form remaining portion the one of the plurality of first magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of first magnetic layers, and
cause the third film formation part to form one of the plurality of first nonmagnetic layers, and
when forming one of the plurality of second magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part and the second film formation part,
cause the first film formation part to form the one of the plurality of second magnetic layers and cause the second film formation part to form an other one of the plurality of second magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of second magnetic layers, and
cause the third film formation part to form one of the plurality of second nonmagnetic layers.

### Claim 2 (depends on 1)

The apparatus according to claim 1, further comprising:
a partition part partitioning a film formation position at which the processing body is formed by the sputter sources of the first, second, and third film formation parts,
the controller causes the processing body to a pass through a film formation position at which film formation of one type of film formation material is performed while depositing the one type of film formation material on the processing body, causes the processing body to pass through a region other than the film formation position at which the film formation of the one type of film formation material is performed, and causes the processing body to again reach the film formation position at which the film formation of the one type of film formation material is performed.

### Claim 3 (depends on 1)

The film formation apparatus according to claim 1, wherein
a number of one of formations of the first magnetic layers and formations of the second magnetic layers is detected, and
the one of formations of the first magnetic layers and formations of the second magnetic layers is stopped when the number reaches a determined value.

### Claim 4 (depends on 1)

The film formation apparatus according to claim 1, wherein
a number of formations of at least one of the first magnetic layers or the first nonmagnetic layers is detected, and
the formations of the first member is stopped when the number of formation of the first magnetic layer or the number of formation of the first nonmagnetic layer reaches a determined value.

### Claim 5 (depends on 1)

The film formation apparatus according to claim 1, wherein
a number of formations of at least one of the second magnetic layers or the second nonmagnetic layers is detected, and
the formations of the second member is stopped when the number of formation of the second magnetic layer or the number of formation of the second nonmagnetic layer reaches a determined value.

### Claim 6 (depends on 1)

The film formation apparatus according to claim 1, wherein
the first structure body further includes a third member in which a plurality of third magnetic layers and a plurality of third nonmagnetic layers are alternately stacked,
the controller is further configured to cause at least one of the first film formation part, the second film formation part, or a third film formation part form the plurality of third magnetic layers,
a number of formations of at least one of the third magnetic layers or the third nonmagnetic layers is detected, and
the formations of the third member is stopped when the number of formation of the third magnetic layer or the number of formation of the third nonmagnetic layer reaches a determined value.

### Claim 7

A film formation apparatus,
the apparatus being configured to form an electromagnetic wave attenuator, the attenuator including a first structure body,
the first structure body including
a first member in which a plurality of first magnetic layers and a plurality of first nonmagnetic layers are alternately stacked, and
a second member in which a plurality of second magnetic layers and a plurality of second nonmagnetic layers are alternately stacked,
a thickness of one of the plurality of first magnetic layers being greater than a thickness of one of the plurality of second magnetic layers,
the apparatus comprising:
a container configured to maintain an atmosphere depressurized from atmospheric pressure;
a first film formation part, a second film formation part, and a third film formation part, the first, second, and third film formation parts being provided in the container, the first, second, and third film formation parts including a sputter source to form the electromagnetic wave attenuator by depositing a film formation material on a processing body by sputtering;
a transfer part provided in the container, the transfer part being configured to circulatively transfer the processing body in a circumferential trajectory to the first film formation part, the second film formation part, and the third film formation part; and
a controller configured to control the first, second and third film formation parts, and the transfer part,
when forming one of the plurality of first magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of first magnetic layers, or cause the second film formation part to form the one of the plurality of first magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of first magnetic layers, and
cause the third film formation part to form one of the plurality of first nonmagnetic layers, and
when forming one of the plurality of second magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of second magnetic layers, or cause the second film formation part to form the one of the plurality of second magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of second magnetic layers, and
cause the third film formation part to form one of the plurality of second nonmagnetic layers, and
a formation time of the one of the plurality of first magnetic layers being longer than a formation time of the one of the plurality of second magnetic layers.

### Claim 8 (depends on 7)

The film formation apparatus according to claim 7, wherein
the first magnetic layers and the second magnetic layers are formed by alternately using the first film formation part and the second film formation part.

### Claim 9 (depends on 7)

The film formation apparatus according to claim 7, wherein
a number of formations of at least one of the first magnetic layers or the first nonmagnetic layers is detected, and
the formations of the first member is stopped when the number of formation of the first magnetic layer or the number of formation of the first nonmagnetic layer reaches a determined value.

### Claim 10 (depends on 7)

The film formation apparatus according to claim 7, wherein
a number of formations of at least one of the second magnetic layers or the second nonmagnetic layers is detected, and
the formations of the second member is stopped when the number of formation of the second magnetic layer or the number of formation of the second nonmagnetic layer reaches a determined value.

### Claim 11 (depends on 7)

The film formation apparatus according to claim 7, wherein
the first structure body further includes a third member in which a plurality of third magnetic layers and a plurality of third nonmagnetic layers are alternately stacked,
the controller is further configured to cause at least one of the first film formation part, the second film formation part, or a third film formation part form the plurality of third magnetic layers,
a number of formations of at least one of the third magnetic layers or the third nonmagnetic layers is detected, and
the formations of the third member is stopped when the number of formation of the third magnetic layer or the number of formation of the third nonmagnetic layer reaches a determined value.

### Claim 12

A film formation apparatus,
the apparatus being configured to form an electromagnetic wave attenuator, the attenuator including a first structure body,
the first structure body including
a first member in which a plurality of first magnetic layers and a plurality of first nonmagnetic layers are alternately stacked, and
a second member in which a plurality of second magnetic layers and a plurality of second nonmagnetic layers are alternately stacked,
a thickness of one of the plurality of first magnetic layers being greater than a thickness of one of the plurality of second magnetic layers,
the apparatus comprising:
a container configured to maintain an atmosphere depressurized from atmospheric pressure;
a first film formation part or a second film formation part, and a third film formation part, the first or second formation part and the third film formation part being provided in the container, the first or second film formation part and the third film formation part including a sputter source to form the electromagnetic wave attenuator by depositing a film formation material on a processing body by sputtering;
a transfer part provided in the container, the transfer part being configured to circulatively transfer the processing body in a circumferential trajectory to the first film formation part or the second film formation part, and the third film formation part; and
a controller configured to control the first or second film formation part, the third film formation part, and the transfer part,
when forming one of the plurality of first magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of first magnetic layers, or cause the second film formation part to form the one of the plurality of first magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of first magnetic layers, and
cause the third film formation part to form one of the plurality of first nonmagnetic layers, and
when forming one of the plurality of second magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of second magnetic layers, or cause the second film formation part to form the one of the plurality of second magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of second magnetic layers, and
cause the third film formation part to form one of the plurality of second nonmagnetic layers, and
a formation time of the one of the plurality of first magnetic layers being longer than a formation time of the one of the plurality of second magnetic layers.

### Claim 13 (depends on 12)

The film formation apparatus according to claim 12,
wherein
a number of formations of at least one of the first magnetic layers or the first nonmagnetic layers is detected, and
the formations of the first member is stopped when the number of formation of the first magnetic layer or the number of formation of the first nonmagnetic layer reaches a determined value.

### Claim 14 (depends on 13)

The film formation apparatus according to claim 13,
wherein
the first structure body further includes a third member in which a plurality of third magnetic layers and a plurality of third nonmagnetic layers are alternately stacked,
the controller is further configured to cause at least one of the first film formation part, the second film formation part, or a third film formation part form the plurality of third magnetic layers,
a number of formations of at least one of the third magnetic layers or the third nonmagnetic layers is detected, and
the formations of the third member is stopped when the number of formation of the third magnetic layer or the number of formation of the third nonmagnetic layer reaches a determined value.

### Claim 15 (depends on 12)

The film formation apparatus according to claim 12,
wherein
a number of formations of at least one of the second magnetic layers or the second nonmagnetic layers is detected, and
the formations of the second member is stopped when the number of formation of the second magnetic layer or the number of formation of the second nonmagnetic layer reaches a determined value.