# US 12,224,236 B2 · Semiconductor device and substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,236 B2 - Document ID: US12224236B2 - Status: Granted - Kind: B2 - Application number: 17/460,468 - Filed: 2021-08-30 - Published: 2022-08-04 - Granted: 2025-02-11 - Earliest claimed: 2021-02-02 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Hideo Aoki; Hideko Mukaida; Satoshi Tsukiyama - Web page: https://patentgrep.com/patent/US12224236B2 ## CPC - H10W 70/69: Insulating materials thereof - H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)} - H10W 70/685: comprising multiple insulating layers - H10W 70/695: Organic materials - H10W 90/00: Package configurations - H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts} - H10W 72/073: {of die-attach connectors} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/117: {the substrate having spherical bumps for external connection} - H10W 90/24: at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape - H10W 90/732: {between stacked chips} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/752: {between stacked chips} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device according to an embodiment includes a substrate and a semiconductor chip. The semiconductor chip is provided over the substrate. The substrate includes a wire layer and an insulating layer. The wire layer includes a wire electrically connected to the semiconductor chip. The insulating layer is provided in contact with the wire layer and includes a glass woven fabric containing a resin. The glass woven fabric includes a plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven. The glass fibers differ in at least one of the material, number, and thickness depending on the directions parallel with the glass woven fabric. ## Claims ### Claim 1 A semiconductor device comprising: a substrate; a semiconductor chip provided over the substrate; and a sealing resin which is provided over the substrate and seals the semiconductor chip, wherein: the substrate includes a wire layer including a wire electrically connected to the semiconductor chip, and an insulating layer provided in contact with the wire layer and including a glass woven fabric containing a resin, the glass woven fabric includes a plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven, the glass fibers differ in at least one of a material, a number, and a thickness depending on the directions parallel with the glass woven fabric, the glass woven fabric includes the glass fibers provided along a first direction and the glass fibers provided along a second direction different from the first direction, the glass fibers provided along the first direction have a lower coefficient of thermal expansion than the glass fibers provided along the second direction, a shape of an outer edge of the semiconductor chip as seen in a direction of a normal to a substrate surface of the substrate is substantially rectangular, the first direction is a direction along long sides of the semiconductor chip, the second direction is a direction along short sides of the semiconductor chip, and the resin accounts for a larger part of a cross-sectional area along the short sides than a cross-sectional area along the long sides. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the glass fibers have different coefficients of thermal expansion depending on the directions parallel with the glass woven fabric. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein proportions of materials of the glass fibers differ depending on the directions parallel with the glass woven fabric. ### Claim 4 A semiconductor device comprising: a substrate; and a semiconductor chip provided over the substrate, wherein: the substrate includes a plurality of wire layers each including a wire electrically connected to the semiconductor chip, and a plurality of insulating layers provided to be alternately stacked with the plurality of wire layers, each of the insulating layers including a glass woven fabric containing a resin, the glass woven fabric includes a plurality of glass fibers that are woven, the glass fibers differ in at least one of a material, a number, and a thickness depending on the insulating layers, glass fibers in a sixth insulating layer in contact with one of the wire layers including a high-speed signal wire that is configured to transmit a signal with a faster speed than other wires have a lower dielectric constant than glass fibers in a seventh insulating layer, the seventh insulating layer being located further from the one of the wire layers including the high-speed signal wire than is the sixth insulating layer, the glass woven fabric includes the plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven, and among the glass fibers in the sixth insulating layer, glass fibers provided along a signal transmission direction of the high-speed signal wire have a lower dielectric constant than glass fibers provided along a direction different from the signal transmission direction. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein the glass fibers differ in at least one of a coefficient of thermal expansion and a dielectric constant depending on the insulating layers. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein: among the glass fibers in the plurality of insulating layers, glass fibers in a first insulating layer have a lower coefficient of thermal expansion than glass fibers in a second insulating layer, the second insulating layer being located closer to the semiconductor chip than is the first insulating layer. ### Claim 7 (depends on 5) The semiconductor device according to claim 5, wherein among the glass fibers in the plurality of insulating layers, glass fibers in a first insulating layer have a lower coefficient of thermal expansion than glass fibers in a third insulating layer, the third insulating layer being located further from the semiconductor chip than is the first insulating layer. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, wherein: the glass woven fabric includes the plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven, and the glass fibers in at least one of the first insulating layer and the third insulating layer have different coefficients of thermal expansion depending on the directions parallel with the glass woven fabric. ### Claim 9 (depends on 5) The semiconductor device according to claim 5, further comprising a metal bump on a second face of the substrate on a side opposite to a first face over which the semiconductor chip is provided, wherein: glass fibers in a fourth insulating layer in contact with one of the wire layers connected to the metal bump have a lower dielectric constant than glass fibers in a fifth insulating layer, the fifth insulating layer being located further from the one of the wire layers connected to the metal bump than is the fourth insulating layer. ### Claim 10 (depends on 4) The semiconductor device according to claim 4, wherein: the semiconductor chip includes a memory chip, and a controller chip configured to control the memory chip, and the high-speed signal wire is electrically connected to the controller chip. ### Claim 11 (depends on 4) The semiconductor device according to claim 4, wherein the signal transmission direction is a direction in which the high-speed signal wire is arranged longest as seen in a direction of a normal to a substrate surface of the substrate. ### Claim 12 (depends on 4) The semiconductor device according to claim 4, wherein proportions of materials of the glass fibers differ depending on the insulating layers.