# US 12,224,234 B2 · Manufacturing method of metal grid, thin film sensor and manufacturing method of thin film sensor

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- Number: US 12,224,234 B2
- Document ID: US12224234B2
- Status: Granted
- Kind: B2
- Application number: 17/629,358
- Filed: 2021-03-15
- Published: 2023-05-25
- Granted: 2025-02-11
- Earliest claimed: 2021-03-15
- Assignees: Beijing BOE Technology Development Co., Ltd.; Boe Technology Group Co., Ltd.
- Applicants: Beijing BOE Technology Development Co., Ltd.; Boe Technology Group Co., Ltd.
- Inventors: Hu Meng
- Web page: https://patentgrep.com/patent/US12224234B2

## CPC

- H01Q 1/38: formed by a conductive layer on an insulating support {(patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142)}
- H10W 70/65: Shapes or dispositions of interconnections
- C25D 5/02: Electroplating of selected surface areas
- C25D 7/123: {Semiconductors first coated with a seed layer or a conductive layer}
- H01Q 1/36: Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence)
- H10P 14/412: {Deposition of metallic or metal-silicide materials}
- H10P 14/46: using a liquid
- H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 50/266: {by vapour etching only}
- H10P 50/283: {by chemical means}
- H10P 50/287: {by chemical means}
- H10W 74/01: Manufacture or treatment
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

## Claims

### Claim 1

A manufacturing method of a metal grid, comprising:
providing a base substrate;
forming a pattern comprising a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape;
forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and
forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid,
wherein the forming a metal material in the second groove comprises:
forming a metal film layer on the base substrate as a seed layer before the forming a pattern comprising a first dielectric layer on the base substrate through a patterning process;
forming a protective layer on a side of the seed layer away from the base substrate;
after the forming a second dielectric layer on a side of the first dielectric layer away from the base substrate, removing a bottom wall of the second groove and a part of the protective layer at a position of the bottom wall of the second groove; and
performing an electroplating process on the seed layer to form the metal material in the second groove.

### Claim 2 (depends on 1)

The manufacturing method according to claim 1, wherein the forming a pattern comprising a first dielectric layer on the base substrate through a patterning process comprises:
forming a first material layer and a second material layer on the base substrate sequentially;
patterning the second material layer to form a sacrificial layer having a lattice-shaped hollow out pattern;
removing a part of a first material of the first material layer at a position corresponding to the lattice-shaped hollow out pattern of the sacrificial layer through a patterning process; and
removing the sacrificial layer to form the first dielectric layer.

### Claim 3 (depends on 2)

The manufacturing method according to claim 2, wherein the first material layer comprises a low-temperature organic curing adhesive; and
the forming a first material layer and a second material layer on the base substrate comprises:
coating the low-temperature organic curing adhesive on the base substrate by a spin coating method, and curing the low-temperature organic curing adhesive; and
depositing a second material of the second material layer on a side of the cured low-temperature organic curing adhesive away from the base substrate.

### Claim 4 (depends on 1)

The manufacturing method according to claim 1, wherein the forming a metal material in the second groove comprises:
forming a metal film layer as a seed layer on a side of the second dielectric layer away from the base substrate;
performing an electroplating process on the seed layer to form a metal material both in the second groove and on a side of the second dielectric layer away from the base substrate; and
removing at least a part of the metal material outside the second groove.

### Claim 5 (depends on 4)

The manufacturing method according to claim 4, wherein the removing at least a part of the metal material outside the second groove comprises:
removing the part of the metal material outside the second groove, and removing a part of the metal material with a predetermined thickness in the second groove.

### Claim 6 (depends on 1)

The manufacturing method according to claim 1, wherein the forming a metal material in the second groove comprises:
forming a metal film layer on a side of the second dielectric layer away from the base substrate, through an evaporation process; and
removing at least a part of the metal material outside the second groove by an etching process.

### Claim 7 (depends on 1)

The manufacturing method according to claim 1, wherein the removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate comprises:
removing a part of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, by wet etching; and
removing the first dielectric layer by dry etching.

### Claim 8 (depends on 1)

The manufacturing method according to claim 1, wherein after forming the metal grid, the manufacturing method further comprises:
forming a passivation layer on a side of the metal grid away from the base substrate.

### Claim 9 (depends on 1)

The manufacturing method according to claim 1, wherein the first dielectric layer has a thickness of 2 μm to 3 μm.

### Claim 10 (depends on 1)

The manufacturing method according to claim 1, wherein the first groove in the first dielectric layer has a width of 3 μm to 4 μm and a depth of 2 μm to 3 μm.

### Claim 11 (depends on 1)

The manufacturing method according to claim 1, wherein a width of the second groove is not greater than 1.5 μm.

### Claim 12 (depends on 1)

A manufacturing method of a thin film sensor, comprising the manufacturing method according to claim 1.