Semiconductor devices and methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, comprising:

• providing a substrate comprising a substrate conductor material and a substrate dielectric over the substrate conductor material;
• providing an electronic component comprising:
• a first component terminal comprising:
• a first component terminal conductor material;
• and
• a first component terminal dielectric over the first component terminal conductor material;
• and
• a second component terminal comprising:
• a second component terminal conductor material;
• and
• a second component terminal dielectric over the second component terminal conductor material;
• providing an interconnect comprising:
• a interconnect conductor material;
• a component end;
• a substrate end;
• and
• an interconnect dielectric over the interconnect conductor material;
• attaching the second component terminal to the substrate by forming a first intermetallic bond;
• attaching the component end of the interconnect to the first component terminal by forming a second intermetallic bond;
• and
• attaching the substrate end of the interconnect to the substrate by forming a third intermetallic bond, wherein:
• attaching the second component terminal to the substrate comprises using ultrasonic vibrations applied to the electronic component and the substrate without first removing the substrate dielectric;
• using the ultrasonic vibrations comprises:
• using the ultrasonic vibrations to remove the substrate dielectric and the second component terminal dielectric;
• forming weld points between the substrate conductor material and the second component terminal conductor material;
• and
• merging the weld points to form the first intermetallic bond as a continuous bond;
• and
• the substrate dielectric abuts edges of the first intermetallic bond after attaching the second component terminal.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate comprising a substrate conductor material and a substrate dielectric over the substrate conductor material;
• providing an electronic component comprising:
• a first component terminal comprising:
• a first component terminal conductor material;
• and
• a first component terminal dielectric over the first component terminal conductor material;
• and
• a second component terminal comprising:
• a second component terminal conductor material;
• and
• a second component terminal dielectric over the second component terminal conductor material;
• providing a first clip comprising:
• a first clip conductor material;
• a component end;
• a substrate end;
• and
• a first clip dielectric over the first clip conductor material;
• attaching the second component terminal to the substrate by forming a first intermetallic bond;
• attaching the component end of the first clip to the first component terminal by forming a second intermetallic bond;
• and
• attaching the substrate end of the first clip to the substrate by forming a third intermetallic bond, wherein:
• attaching the second component terminal to the substrate comprises using ultrasonic vibrations and a downward pressure applied to the electronic component and the substrate without first removing the substrate dielectric and the second component terminal dielectric;
• using the ultrasonic vibrations and the downward pressure comprises:
• using the ultrasonic vibrations and the downward pressure to frictionally remove the substrate dielectric and the second component terminal dielectric;
• forming weld points between the substrate conductor material and the second component terminal conductor material;
• and
• merging the weld points to form the first intermetallic bond as a continuous bond;
• and
• the substrate dielectric abuts edges of the first intermetallic bond after attaching the second component terminal.