# US 12,224,229 B2 · Semiconductor device with grooved die pad

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- Number: US 12,224,229 B2
- Document ID: US12224229B2
- Status: Granted
- Kind: B2
- Application number: 17/410,508
- Filed: 2021-08-24
- Published: 2022-09-22
- Granted: 2025-02-11
- Earliest claimed: 2021-03-16
- Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation
- Applicants: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation
- Inventors: Kyo Tanabiki
- Web page: https://patentgrep.com/patent/US12224229B2

## CPC

- H10W 70/411: {Chip-supporting parts, e.g. die pads}
- H10W 70/048: {Mechanical treatments, e.g. punching, cutting, deforming or cold welding}
- H10W 70/456: {Materials}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, a semiconductor device includes a frame with a die pad and terminals extending from the die pad in a first direction. A groove is provided in an upper surface of the die pad. A semiconductor element is on the upper surface of the die pad but does not overlap the groove. A resin material covers the semiconductor element and is in the groove. The groove includes a bottom surface with an irregularity therein.

## Claims

### Claim 1

A semiconductor device, comprising:
a frame including a die pad and terminals extending away from the die pad in a first direction;
a groove in an upper surface of the die pad, the groove extending lengthwise in the first direction and including a first groove portion and a second groove portion adjacent to each other in the first direction, the first groove portion being continuous with the second groove portion in the first direction;
a semiconductor element on the upper surface of the die pad but not overlapping the groove; and
a resin material in the groove and covering the semiconductor element, wherein the groove has a bottom surface and a first irregularity is formed in the bottom surface,
the second groove portion has a width in a second direction perpendicular to the first direction that is greater than a width of the first groove portion,
the length of the first groove portion in the first direction is greater than the length of the second groove portion in the first direction;
the groove is proximate to an outer edge of the die pad, the outer edge extending in the first direction, and
the groove extends the entire length of the die pad in the first direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the bottom surface of the groove includes a substantially flat portion, and
the first irregularity is a recess extending into the die pad to a depth greater than the bottom surface.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the first irregularity extends less than the entire length of the die pad.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the first irregularity extends to an outer edge of the die pad that extends in the second direction.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the die pad is rectangular shaped.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the frame is copper.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the first irregularity is in the bottom surface of the second groove portion but not in the bottom surface of the first groove portion.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the groove further includes a second irregularity at a boundary between the first groove portion and the second groove portion.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8, wherein
the second irregularity is a protrusion extending upward from the bottom surfaces of the first and second groove portions, and
the protrusion extends in the second direction between sidewalls of the groove.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein a depth of the second groove portion is greater than a depth of the first groove portion.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, wherein the second groove portion is at an end of the groove in the first direction.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1, wherein the second groove portion is located at a middle portion of groove along the first direction.

### Claim 13 (depends on 1)

The semiconductor device according to claim 1, wherein the second groove portion is at both ends of the groove in the first direction.

### Claim 14 (depends on 1)

The semiconductor device according to claim 1, wherein the second groove portion has angled sidewalls that form an oblique angle with bottom surface.