# US 12,224,220 B2 · Semiconductor module and power conversion apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,220 B2 - Document ID: US12224220B2 - Status: Granted - Kind: B2 - Application number: 17/781,713 - Filed: 2020-02-06 - Published: 2023-01-26 - Granted: 2025-02-11 - Earliest claimed: 2020-02-06 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Ken Sakamoto; Haruko Hitomi; Kozo Harada; Seiki Hiramatsu - Web page: https://patentgrep.com/patent/US12224220B2 ## CPC - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10W 76/47: Solid or gel fillings - H02M 7/5387: in a bridge configuration - H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)} - H10W 72/50: Bond wires - H10W 74/127: {characterised by arrangements for sealing or adhesion} - H10W 90/00: Package configurations - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H10W 72/01515: {Forming coatings} - H10W 72/07331: {Connecting techniques} - H10W 72/07336: {Soldering or alloying} - H10W 72/075: {of bond wires} - H10W 72/07554: {changes in dispositions} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/531: {Shapes of wire connectors} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/551: {Materials of bond wires} - H10W 72/552: {comprising metals or metalloids, e.g. silver} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/553: {not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids} - H10W 72/555: {of outermost layers of multilayered bond wires, e.g. material of a coating} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/90: Bond pads, in general - H10W 72/944: {Dispositions of multiple bond pads} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/10: characterised by their shape or disposition - H10W 74/40: characterised by their materials - H10W 74/47: comprising organic materials, e.g. plastics or resins - H10W 74/476: {Organic materials comprising silicon} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/753: {between laterally-adjacent chips} - H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) ## Abstract A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%. ## Claims ### Claim 1 A semiconductor module comprising: a first power semiconductor device including a first electrode; a conductive wire joined to a first surface of the first electrode; and a resin film formed to be continuous on a first end portion of a first joint between the first electrode and the conductive wire in a longitudinal direction of the conductive wire, the first surface of the first electrode, and a second surface of the conductive wire, wherein the resin film has an elastic elongation rate of 4.5% to 10.0%. ### Claim 2 (depends on 1) The semiconductor module according to claim 1, wherein the resin film is formed of a polyimide resin, an epoxy resin, or a silicone resin. ### Claim 3 (depends on 1) The semiconductor module according to claim 1, wherein the resin film is formed of a resin material formed by polymerization of an acid dihydrate including an alkyl group and a diamine including a benzene ring, an ether bond, and an alkyl group. ### Claim 4 (depends on 1) The semiconductor module according to claim 1, wherein a shear bond strength of the resin film to the conductive wire is 8.0 MPa to 13.0 MPa. ### Claim 5 (depends on 1) The semiconductor module according to claim 1, further comprising a sealing member to seal the first power semiconductor device, the conductive wire, and the resin film, wherein the sealing member is formed of a gel, and a second tensile modulus of the gel is lower than a first tensile modulus of a resin material forming the resin film. ### Claim 6 (depends on 5) The semiconductor module according to claim 5, wherein the gel is silicone gel. ### Claim 7 (depends on 5) The semiconductor module according to claim 5, wherein the first power semiconductor device includes a guard ring, and the resin film covers the guard ring and is in contact with the sealing member and the guard ring. ### Claim 8 (depends on 1) The semiconductor module according to claim 1, further comprising a sealing member to seal the first power semiconductor device, the conductive wire, and the resin film, wherein the sealing member is formed of a thermosetting resin, and a third tensile modulus of the thermosetting resin is higher than a first tensile modulus of a resin material forming the resin film. ### Claim 9 (depends on 8) The semiconductor module according to claim 8, wherein the thermosetting resin mainly includes an epoxy resin, a urethane resin, a polyimide resin, a polyamide resin, or an acrylic resin. ### Claim 10 (depends on 1) The semiconductor module according to claim 1, wherein at least one of the first surface or the second surface has a coarse surface, and the resin film is formed on the coarse surface. ### Claim 11 (depends on 1) The semiconductor module according to claim 1, wherein the conductive wire is formed of copper, iron, nickel, cobalt, aluminum, or an alloy thereof. ### Claim 12 (depends on 1) The semiconductor module according to claim 1, further comprising a second power semiconductor device including a second electrode, wherein the conductive wire is joined to a third surface of the second electrode, and the resin film is formed to be continuous on a second end portion of a second joint between the second electrode and the conductive wire, the third surface of the second electrode, and the second surface of the conductive wire, and is formed on the entire conductive wire between the first joint and the second joint. ### Claim 13 (depends on 1) A power conversion apparatus comprising: a main conversion circuit including the semiconductor module according to claim 1, the main conversion circuit converting input power and outputting the converted power; and a control circuit to output a control signal for controlling the main conversion circuit to the main conversion circuit.