# US 12,224,218 B2 · Semiconductor packages with increased power handling > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,218 B2 - Document ID: US12224218B2 - Status: Granted - Kind: B2 - Application number: 17/670,174 - Filed: 2022-02-11 - Published: 2023-08-17 - Granted: 2025-02-11 - Earliest claimed: 2022-02-11 - Assignees: Wolfspeed, Inc. - Applicants: Wolfspeed, Inc. - Inventors: Geza Dezsi; Devarajan Balaraman; Brice McPherson - Web page: https://patentgrep.com/patent/US12224218B2 ## CPC - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00) - H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)} - H10W 70/461: {specially adapted for cooling} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10D 8/60: Schottky-barrier diodes - H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) - H10D 62/8325: {Silicon carbide} - H10W 70/465: {Bumps or wires} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Semiconductor packages and, more particularly, semiconductor packages with increased power handling capabilities are disclosed. Semiconductor packages may include lead frame structures and corresponding housings that incorporate semiconductor die. To promote increased current and voltage capabilities, exemplary semiconductor packages include one or more arrangements of creepage extension structures, lead frame structures that may include integral thermal pads, additional thermal elements, and combinations thereof. Creepage extension structures may be arranged as part of top sides of semiconductor packages along with thermal pads of lead frame structures and additional thermal elements. Creepage extension structures may also be arranged as part of top sides and along on one or more peripheral edges of semiconductor packages to promote further increases in power handling. ## Claims ### Claim 1 A semiconductor package comprising: a semiconductor die; a housing for the semiconductor die, the housing comprising a first material and including a first side, a second side, and a creepage extension structure of the first material that is part of the first side and comprises at least one trench; and a first lead electrically connected with the semiconductor die, the first lead including a thermal pad and at least one pin that extends away from the thermal pad, the thermal pad comprising a second material that is different from the first material and being arranged at the first side and adjacent to the creepage extension structure. ### Claim 2 (depends on 1) The semiconductor package of claim 1, wherein the first side is a top side of the housing, and the second side is a bottom side of the housing that forms a mounting side of the housing. ### Claim 3 (depends on 1) The semiconductor package of claim 1, further comprising: a second lead electrically connected with the semiconductor die, wherein the creepage extension structure is arranged between the thermal pad and the second lead, and wherein a creepage distance along a surface of the housing having the at least one trench therein is greater than a shortest path between the thermal pad of the first lead and the second lead. ### Claim 4 (depends on 3) The semiconductor package of claim 3, wherein the semiconductor die is a metal-oxide-semiconductor field-effect transistor (MOSFET), the first lead is electrically coupled to a drain of the MOSFET, and the second lead is electrically coupled to a source of the MOSFET. ### Claim 5 (depends on 4) The semiconductor package of claim 4, further comprising a third lead that is electrically coupled to a gate of the MOSFET, wherein the creepage extension structure is arranged between the thermal pad and the third lead. ### Claim 6 (depends on 5) The semiconductor package of claim 5, further comprising a fourth lead, wherein the creepage extension structure is arranged between the thermal pad and the fourth lead, and wherein the fourth lead is electrically coupled to a current sensor or a temperature sensor of the MOSFET. ### Claim 7 (depends on 4) The semiconductor package of claim 4, wherein the MOSFET is a silicon carbide (SiC) based MOSFET. ### Claim 8 (depends on 3) The semiconductor package of claim 3, wherein the semiconductor die is a Schottky diode, the first lead is electrically coupled to a first contact of the Schottky diode, and the second lead is electrically coupled to a second contact of the Schottky diode. ### Claim 9 (depends on 1) The semiconductor package of claim 1, wherein the housing forms a protrusion such that the first side includes a first width between opposing peripheral edges of the housing and a second width between the opposing peripheral edges that is narrower than the first width, wherein the thermal pad is arranged within the first width and the creepage extension structure is arranged to extend from the first width to the second width. ### Claim 10 (depends on 1) The semiconductor package of claim 1, wherein the at least one trench comprises one or more trenches that extend into a first peripheral edge of the housing. ### Claim 11 (depends on 10) The semiconductor package of claim 10, wherein the one or more trenches are laterally bounded by an outer surface of the housing on the first side of the housing. ### Claim 12 (depends on 10) The semiconductor package of claim 10, wherein the one or more trenches are arranged to extend along one or more peripheral edges of the housing. ### Claim 13 (depends on 10) The semiconductor package of claim 10, wherein the one or more trenches are arranged to extend across an entire width of the first side as measured between two opposing peripheral edges of the housing. ### Claim 14 (depends on 1) The semiconductor package of claim 1, further comprising an electrically insulating plate that is arranged on the thermal pad. ### Claim 15 (depends on 14) The semiconductor package of claim 14, wherein the electrically insulating plate comprises a direct bonded copper plate. ### Claim 16 (depends on 1) The semiconductor package of claim 1, wherein the thermal pad is integral with the first side. ### Claim 17 A semiconductor package comprising: a semiconductor die; a first lead electrically coupled with the semiconductor die; a second lead electrically coupled with the semiconductor die; and a housing for the semiconductor die, the housing comprising: a first side, a second side, and a plurality of peripheral edges of a first material, wherein the plurality of peripheral edges are arranged between the first side and the second side; and a creepage extension structure of the first material that is part of the first side and is part of a first peripheral edge of the plurality of peripheral edges, wherein the creepage extension structure comprises at least one trench. ### Claim 18 (depends on 17) The semiconductor package of claim 17, wherein the at least one trench comprises one or more trenches that extend into the first peripheral edge. ### Claim 19 (depends on 17) The semiconductor package of claim 17, wherein the creepage extension structure is further part of a second peripheral edge of the plurality of peripheral edges, wherein the second peripheral edge is opposite the first peripheral edge. ### Claim 20 (depends on 17) The semiconductor package of claim 17, wherein the at least one trench extends into the first peripheral edge and into the first side of the housing. ### Claim 21 (depends on 17) The semiconductor package of claim 17, wherein the first lead comprises a thermal pad and at least one pin that extends away from the thermal pad, and wherein the thermal pad is arranged on the first side and adjacent to the creepage extension structure. ### Claim 22 (depends on 21) The semiconductor package of claim 21, further comprising an electrically insulating plate that is arranged on the thermal pad. ### Claim 23 (depends on 22) The semiconductor package of claim 22, wherein the electrically insulating plate comprises a direct bonded copper plate. ### Claim 24 (depends on 17) The semiconductor package of claim 17, wherein the semiconductor die is a metal-oxide-semiconductor field-effect transistor (MOSFET), the first lead is electrically coupled to a drain of the MOSFET, and the second lead is electrically coupled to a source of the MOSFET. ### Claim 25 (depends on 17) The semiconductor package of claim 17, wherein the semiconductor die is a Schottky diode, the first lead is electrically coupled to a first contact of the Schottky diode, and the second lead is electrically coupled to a second contact of the Schottky diode. ### Claim 26 A semiconductor package comprising: a semiconductor die; a first lead electrically coupled with the semiconductor die; a second lead electrically coupled with the semiconductor die; and a housing for the semiconductor die, the housing including a first side, a second side, and a creepage extension structure that is part of the housing and is configured to provide voltage isolation between the first lead and the second lead, the creepage extension structure forming a number of trenches that extend into the housing to provide a creepage distance between the first lead and the second lead that is in a range from 12 millimeters (mm) to 20 mm. ### Claim 27 (depends on 26) The semiconductor package of claim 26, wherein the number of trenches is at least one. ### Claim 28 (depends on 27) The semiconductor package of claim 27, wherein the number of trenches is less than or equal to six. ### Claim 29 (depends on 26) The semiconductor package of claim 26, wherein the creepage extension structure is part of the first side of the housing and includes a surface of the housing having the trenches therein. ### Claim 30 (depends on 29) The semiconductor package of claim 29, wherein the creepage extension structure is further part of one or more peripheral edges of the housing. ### Claim 31 (depends on 30) The semiconductor package of claim 30, wherein the creepage extension structure is further part of the second side of the housing. ### Claim 32 (depends on 29) The semiconductor package of claim 29, wherein the first lead comprises a thermal pad arranged on the first side and adjacent to the creepage extension structure, and wherein the creepage distance along the surface of the housing is greater than a shortest path between the thermal pad of the first lead and the second lead. ### Claim 33 (depends on 1) The semiconductor package of claim 1, wherein the first material is configured to provide voltage isolation between the first lead and a second lead electrically connected with the semiconductor die.