# US 12,224,217 B2 · Radio frequency package implementing a window frame with edge plating and processes of implementing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,217 B2 - Document ID: US12224217B2 - Status: Granted - Kind: B2 - Application number: 16/811,161 - Filed: 2020-03-06 - Published: 2021-09-09 - Granted: 2025-02-11 - Earliest claimed: 2020-03-06 - Assignees: MACOM Technology Solutions Holdings, Inc. - Applicants: Cree, Inc. - Inventors: Richard Wilson; Haedong Jang; Simon Ward; Madhu Chidurala - Web page: https://patentgrep.com/patent/US12224217B2 ## CPC - H10W 70/6875: {being on a metallic substrate, e.g. insulated metal substrates [IMS]} - H10W 76/13: Containers comprising a conductive base serving as an interconnection - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 76/01: Manufacture or treatment - H10W 76/157: having interconnections parallel to the insulating or insulated base - H10W 76/60: Seals - H10W 90/00: Package configurations - H10W 90/811: {Multiple chips on leadframes} - H10W 44/234: {Arrangements for impedance matching} - H10W 44/251: {for monolithic microwave integrated circuits [MMIC]} - H10W 90/753: {between laterally-adjacent chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A radio frequency (RF) package includes a support having a semiconductor die attach region; a frame that includes an electrically insulative member having a lower side attached to the support and an upper side opposite the support; the frame includes an opening at least partially registered with said semiconductor die attach region; and the frame includes an upper metallization at the upper side of the electrically insulative member and a lower metallization The frame includes first electrically conductive edge connection connecting the first metallization to the first lower metallization. ## Claims ### Claim 1 A radio frequency (RF) package, comprising: a support having a semiconductor die attach region; at least one semiconductor die; a frame comprising an electrically insulative member having a lower side attached to the support and an upper side opposite the support; the frame comprising an opening at least partially registered with said semiconductor die attach region; the frame comprising an upper metallization having a first metallization and a second metallization at the upper side of the electrically insulative member and a lower metallization at the lower side of the electrically insulative member; at least one discrete device arranged on the upper metallization, the at least one discrete device being configured as a radio frequency component, and the at least one discrete device having terminals connected to the first metallization and the second metallization; and the frame comprising an electrically conductive edge connection within the opening of the frame connecting the upper metallization to the lower metallization. ### Claim 2 (depends on 1) The RF package of claim 1 wherein the second metallization forms a terminal of the RF package; wherein the first metallization and the lower metallization are electrically connected by the electrically conductive edge connection at a region of the electrically insulative member within the opening of the frame; and wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization. ### Claim 3 (depends on 1) The RF package of claim 1 wherein the electrically conductive edge connection comprises edge plating; wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged on inner edges of the frame within the opening of the frame. ### Claim 4 (depends on 1) The RF package of claim 1 further comprising: a third metallization disposed on the electrically insulative member; and a lid on the frame enclosing the opening, wherein the third metallization forms a terminal of the RF package; wherein the second metallization forms a terminal of the RF package; wherein the upper metallization extends to an edge of the frame; wherein the lower metallization extends an edge of the frame; and wherein the edge of the frame comprises an electrically conductive edge connection. ### Claim 5 (depends on 4) The RF package of claim 4 wherein the second metallization forms a terminal of the RF package; wherein the frame protrudes from between the lid and the support; and wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization. ### Claim 6 (depends on 1) The RF package of claim 1, wherein the at least one semiconductor die is a GaN based high-electron-mobility transistor (HEMT). ### Claim 7 (depends on 1) The RF package of claim 1 wherein the second metallization forms a terminal of the RF package; wherein the at least one discrete device comprises one or more of the following: a resistor, an inductor, and a capacitor; wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged within a cavity of the frame. ### Claim 8 (depends on 1) The RF package of claim 1 further comprising at least one secondary device is configured to implement one or more of the following: an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, a matching network, and an integrated passive device (IPD). ### Claim 9 (depends on 1) The RF package of claim 1 further comprising at least one multiple stage die implementing multiple paths. ### Claim 10 (depends on 1) The RF package of claim 1 being configured as a Doherty amplifier. ### Claim 11 (depends on 1) The RF package according to claim 1, wherein: the frame further comprises: a second lower metallization at the lower side of the electrically insulative member and spaced apart from the lower metallization; and a second electrically conductive edge plating connecting the second metallization to the second lower metallization, wherein the second metallization forms a terminal of the RF package; and wherein the second metallization and the second lower metallization are electrically connected by the second electrically conductive edge plating. ### Claim 12 A process of implementing a radio frequency (RF) package, comprising: configuring a support having a semiconductor die attach region; providing at least one semiconductor die; configuring a frame comprising an electrically insulative member having a lower side attached to the support and an upper side opposite the support; configuring the frame to have an opening at least partially registered with said semiconductor die attach region; configuring the frame with an upper metallization having a first metallization and a second metallization at the upper side of the electrically insulative member and a lower metallization at the lower side of the electrically insulative member; arranging at least one discrete device on the upper metallization, the at least one discrete device being configured as a radio frequency component, and the at least one discrete device having terminals connected to the first metallization and the second metallization; and configuring the frame with an electrically conductive edge connection within the opening of the frame connecting the upper metallization to the lower metallization. ### Claim 13 (depends on 12) The process of implementing a RF package of claim 12 further comprising connecting the first metallization and the lower metallization by the electrically conductive edge connection at a region of the electrically insulative member within the opening of the frame, wherein the second metallization forms a terminal of the RF package; and wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization. ### Claim 14 (depends on 12) The process of implementing a RF package of claim 12 wherein the electrically conductive edge connection comprises edge plating; wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged on inner edges of the frame within the opening of the frame. ### Claim 15 (depends on 12) The process of implementing a RF package of claim 12 further comprising: configuring the frame to have a third metallization disposed on the electrically insulative member; and arranging a lid on the frame enclosing the opening, wherein the third metallization forms a terminal of the RF package; wherein the second metallization forms a terminal of the RF package; wherein the upper metallization extends to an edge of the frame; and wherein the lower metallization extends to the edge of the frame; and wherein the edge of the frame comprises an electrically conductive edge connection. ### Claim 16 (depends on 15) The process of implementing a RF package of claim 15 wherein the second metallization forms a terminal of the RF package; wherein the frame protrudes from between the lid and the support; and wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization. ### Claim 17 (depends on 12) The process of implementing a RF package of claim 12, wherein the at least one semiconductor die is a GaN based high-electron-mobility transistor (HEMT). ### Claim 18 (depends on 12) The process of implementing a RF package of claim 12 further comprising configuring the at least one discrete device to include one or more of the following: a resistor, an inductor, and a capacitor, wherein the second metallization forms a terminal of the RF package; wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization; and wherein the electrically conductive edge connection is arranged within a cavity of the frame. ### Claim 19 (depends on 12) The process of implementing a RF package of claim 12 further comprising implementing at least one secondary device as one or more of the following: an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, a matching network, and an integrated passive device (IPD). ### Claim 20 (depends on 12) The process of implementing a RF package of claim 12 further comprising providing a multiple stage die implementing multiple paths. ### Claim 21 (depends on 12) The process of implementing a RF package of claim 12 further comprising configuring the RF package as a Doherty amplifier. ### Claim 22 (depends on 12) The process of implementing a RF package according to claim 12, further comprising: configuring a second lower metallization at the lower side of the electrically insulative member and spaced apart from the lower metallization; and configuring a second electrically conductive edge plating connecting the second metallization to the second lower metallization, wherein the second metallization forms a terminal of the RF package; and wherein the second metallization and the second lower metallization are electrically connected by the second electrically conductive edge plating.