# US 12,224,178 B2 · Method of manufacturing vias with pulsing plasma

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,224,178 B2
- Document ID: US12224178B2
- Status: Granted
- Kind: B2
- Application number: 18/488,057
- Filed: 2023-10-17
- Published: 2024-02-08
- Granted: 2025-02-11
- Earliest claimed: 2021-10-28
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Zhi-Xuan Shen
- Web page: https://patentgrep.com/patent/US12224178B2

## CPC

- H10P 50/283: {by chemical means}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/687: {the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene}
- H10P 50/73: {using masks for insulating materials}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/4441: {the principal metal being a refractory metal}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor includes: providing a stacked structure comprising a first oxide layer, a second oxide layer, and a metal layer stacked between the first oxide layer and the second oxide layer; patterning the second oxide layer; forming a mask layer on the patterned second oxide layer; introducing a gas mixture to the stacked structure; and performing a pulsing plasma process to the stacked structure through the mask layer to form at least one via running through the first oxide layer, the metal layer, and the second oxide layer.

## Claims

### Claim 1

A method of manufacturing a semiconductor, comprising:
providing a stacked structure comprising a first oxide layer, a second oxide layer, and a metal layer stacked between the first oxide layer and the second oxide layer;
patterning the second oxide layer by performing a pulsing plasma process;
pumping out highly volatile reactants produced in the pulsing plasma process;
forming a mask layer on the patterned second oxide layer;
introducing a gas mixture to the stacked structure;
performing another pulsing plasma process to the stacked structure through the mask layer to form at least one via running through the first oxide layer, the metal layer, and the second oxide layer; and
pumping out highly volatile reactants produced in the another pulsing plasma process.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming the mask layer comprises:
forming a first covering layer on the patterned second oxide layer; and
forming a second covering layer on the first covering layer to cover and contact at least one portion of a surface of the metal layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the forming the second covering layer is performed by using a blanket deposition process.

### Claim 4 (depends on 2)

The method of claim 2, wherein the second covering layer comprises a high dielectric material.

### Claim 5 (depends on 2)

The method of claim 2, wherein the first covering layer comprises zirconium oxide or hafnium oxide.

### Claim 6 (depends on 2)

The method of claim 2, wherein the second covering layer is conformally formed over the second oxide layer and the first covering layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the gas mixture comprises at least two hydrocarbon compounds and oxygen.

### Claim 8 (depends on 7)

The method of claim 7, wherein the at least two hydrocarbon compounds comprise a saturated hydrocarbon compound and an unsaturated hydrocarbon compound or comprise two unsaturated hydrocarbon compounds.

### Claim 9 (depends on 7)

The method of claim 7, wherein one of the at least two hydrocarbon compounds has an additional double bond comparing to another one of the at least two hydrocarbon compounds.

### Claim 10 (depends on 1)

The method of claim 1, wherein the metal layer comprises tungsten.

### Claim 11

A method of manufacturing a semiconductor, comprising:
providing a stacked structure comprising a first oxide layer, a second oxide layer, and a metal layer stacked between the first oxide layer and the second oxide layer;
forming a mask layer on the second oxide layer;
introducing a gas mixture to the stacked structure, wherein the gas mixture comprises at least two hydrocarbon compounds and oxygen;
performing a pulsing plasma process to the stacked structure through the mask layer to pattern the second oxide layer and expose the metal layer through the patterned second oxide layer; and
pumping out highly volatile reactants produced in the pulsing plasma process,
wherein the forming the mask layer comprises:
forming a first covering layer on the second oxide layer;
patterning the first covering layer to expose at least one portion of a surface of the second oxide layer; and
forming a second covering layer on the patterned first covering layer to cover and contact the at least one portion of the surface of the second oxide layer and a top surface and sidewalls of the patterned first covering layer, wherein the second covering layer comprises a high dielectric material.

### Claim 12 (depends on 11)

The method of claim 11, wherein the forming the second covering layer is performed by using a blanket deposition process.

### Claim 13 (depends on 11)

The method of claim 11, wherein the first covering layer comprises zirconium oxide or hafnium oxide.

### Claim 14 (depends on 11)

The method of claim 11, wherein the performing the pulsing plasma process further form at least one via running through the first oxide layer, the metal layer, and the second oxide layer.

### Claim 15 (depends on 11)

The method of claim 11, wherein the gas mixture comprises at least two hydrocarbon compounds and oxygen.

### Claim 16 (depends on 15)

The method of claim 15, wherein the at least two hydrocarbon compounds comprise a saturated hydrocarbon compound and an unsaturated hydrocarbon compound or comprise two unsaturated hydrocarbon compounds.

### Claim 17 (depends on 15)

The method of claim 15, wherein one of the at least two hydrocarbon compounds has an additional double bond comparing to another one of the at least two hydrocarbon compounds.

### Claim 18 (depends on 11)

The method of claim 11, wherein the metal layer comprises tungsten.

### Claim 19

A method of manufacturing a semiconductor, comprising:
providing a stacked structure comprising a first oxide layer, a second oxide layer, and a metal layer stacked between the first oxide layer and the second oxide layer;
etching the second oxide layer through a mask layer;
pumping out highly volatile reactants produced by etching the second oxide layer;
forming another mask layer on the second oxide layer after etching the second oxide layer;
etching the metal layer and the first oxide layer through the another mask layer to form at least one via; and
pumping out highly volatile reactants produced by etching the metal layer and the first oxide layer.

### Claim 20 (depends on 19)

The method of claim 19, wherein the metal layer comprises tungsten.