# US 12,224,174 B2 · Stacked structure including semiconductor structure and method of manufacturing the same

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- Number: US 12,224,174 B2
- Document ID: US12224174B2
- Status: Granted
- Kind: B2
- Application number: 18/502,583
- Filed: 2023-11-06
- Published: 2024-02-29
- Granted: 2025-02-11
- Earliest claimed: 2020-10-26
- Assignees: Samsung Display Co., Ltd.; Industry-Academic Cooperation Foundation, Yonsei University
- Applicants: Samsung Display Co., LTD.; Industry-Academic Cooperation Foundation, Yonsei University
- Inventors: Mann Ho Cho; Kwang Sik Jeong; Hyeon Sik Kim; Hyun Eok Shin; Byung Soo So; Ju Hyun Lee
- Web page: https://patentgrep.com/patent/US12224174B2

## CPC

- H10P 14/3241: {being conductive materials}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3256: {Microstructure}
- H10P 14/3416: {Nitrides}
- H10H 20/032: {of electrodes}
- H10H 20/0364: {of interconnections}
- H10H 20/832: characterised by their material
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

## Claims

### Claim 1

A stacked structure, comprising:
an amorphous substrate;
a first metal buffer layer disposed directly on an upper surface of the amorphous substrate;
a second metal buffer layer disposed on the first metal buffer layer; and
a semiconductor structure disposed on the second metal buffer layer,
wherein the semiconductor structure comprises:
a first semiconductor layer disposed on the second metal buffer layer;
an active layer disposed on the first semiconductor layer; and
a second semiconductor layer disposed on the active layer.

### Claim 2 (depends on 1)

The stacked structure of claim 1, wherein the amorphous substrate includes a glass substrate.

### Claim 3 (depends on 1)

The stacked structure of claim 1, wherein the first metal buffer layer includes at least one of Be, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Hf, Ta, W, Re, Os, Lr, Pt, Au, Hg, Pb, TI, a combination thereof, and a nitride thereof.

### Claim 4 (depends on 1)

The stacked structure of claim 1, wherein the second metal buffer layer includes at least one of Be, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Hf, Ta, W, Re, Os, Lr, Pt, Au, Hg, Pb, TI, a combination thereof, and a nitride thereof.

### Claim 5 (depends on 1)

The stacked structure of claim 1, wherein the second metal buffer layer has a hexagonal crystal structure.