# US 12,224,166 B2 · Magnesium oxide sputtering target

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- Number: US 12,224,166 B2
- Document ID: US12224166B2
- Status: Granted
- Kind: B2
- Application number: 17/284,003
- Filed: 2019-10-09
- Published: 2021-11-11
- Granted: 2025-02-11
- Earliest claimed: 2018-10-10
- Assignees: JX Advanced Metals Corporation
- Applicants: JX Nippon Mining & Metals Corporation
- Inventors: Hiroki Kajita; Yoshitaka Shibuya; Satoyasu Narita
- Web page: https://patentgrep.com/patent/US12224166B2

## CPC

- H01J 37/3426: {Material}
- C01F 5/02: Magnesia
- C04B 35/04: based on magnesium oxide
- C04B 35/053: Fine ceramics
- C04B 35/645: Pressure sintering
- C04B 35/6455: {Hot isostatic pressing}
- C23C 14/081: {of aluminium, magnesium or beryllium}
- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C01P 2002/60: Compounds characterised by their crystallite size
- C01P 2004/03: obtained by SEM
- C01P 2004/61: Micrometer sized, i.e. from 1-100 micrometer
- C01P 2006/80: Compositional purity
- C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/6567: Treatment time
- C04B 2235/661: Multi-step sintering
- C04B 2235/72: Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B 2235/77: Density
- C04B 2235/786: Micrometer sized grains, i.e. from 1 to 100 micron
- C04B 2235/81: Materials characterised by the absence of phases other than the main phase, i.e. single phase materials
- C04B 2235/96: Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00})
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.

## Claims

### Claim 1

A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed under a microscope is 20% or more and 50% or less; wherein the ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed is calculated based on the following formula: (ratio of crystal grains in which 20 or more pinholes are observed)={(number of crystal grains in which 20 or more pinholes are observed in a visual field under the microscope)/(total number of crystal grains in the visual field)}×100; wherein the pinholes have a diameter of about 1 μm and exist within the crystal grains; and wherein an average crystal grain size of the sputtering target is 35 μm or more to 400 μm or less.

### Claim 2 (depends on 1)

The sputtering target according to claim 1, wherein a flexural strength of the sputtering target is 150 MPa or more.

### Claim 3 (depends on 1)

The sputtering target according to claim 1, wherein a relative density of the sputtering target is 99.7% or higher.