# US 12,224,163 B2 · Ion beam source, substrate process apparatus including the same, and method of processing a substrate using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,224,163 B2 - Document ID: US12224163B2 - Status: Granted - Kind: B2 - Application number: 18/234,123 - Filed: 2023-08-15 - Published: 2024-02-22 - Granted: 2025-02-11 - Earliest claimed: 2022-08-17 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: SeungWan Yoo; Jeongyeon Lee; Dohyung Kim; Jaehong Park; Dong-Chan Lim - Web page: https://patentgrep.com/patent/US12224163B2 ## CPC - H01J 37/32697: {Electrostatic control} - C23C 14/3442: {using an ion beam} - C23C 14/46: by ion beam produced by an external ion source - H01J 27/024: {Extraction optics, e.g. grids} - H01J 37/08: Ion sources; Ion guns - H01J 37/3053: {for evaporating or etching} - H01J 37/3211: {Antennas, e.g. particular shapes of coils} - H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream} - H01J 37/32422: {Arrangement for selecting ions or species in the plasma} - H01J 37/34: operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) - H01J 2237/061: Construction - H01J 2237/081: Sputtering sources - H01J 2237/083: Beam forming - H01J 2237/332: Coating - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid. ## Claims ### Claim 1 An ion beam source, comprising: a plasma chamber comprising a plasma generating space; a plasma generator configured to generate plasma in the plasma generating space; a first grid connected to the plasma chamber; a second grid connected to the plasma chamber; and a first grid driver connected to the first grid, wherein the first grid driver is configured to move the first grid relative to the second grid. ### Claim 2 (depends on 1) The ion beam source of claim 1, wherein each of the first grid and the second grid has a plate shape extending perpendicular to a first direction, and wherein the first grid and the second grid are spaced apart from each other in the first direction. ### Claim 3 (depends on 2) The ion beam source of claim 2, wherein the first grid driver is configured to move the first grid in a second direction crossing the first direction. ### Claim 4 (depends on 2) The ion beam source of claim 2, wherein the first grid driver is configured to rotate the first grid about an axis parallel to the first direction. ### Claim 5 (depends on 2) The ion beam source of claim 2, wherein the first grid driver is configured to move the first grid in the first direction. ### Claim 6 (depends on 1) The ion beam source of claim 1, further comprising a third grid connected to the plasma chamber. ### Claim 7 (depends on 6) The ion beam source of claim 6, further comprising a second grid driver connected to the second grid, wherein the second grid driver is configured to move the second grid relative to the third grid. ### Claim 8 (depends on 1) The ion beam source of claim 1, wherein each of the first grid and the second grid comprises at least one of stainless steel (SUS), carbon graphite, copper (Cu), or aluminum (Al). ### Claim 9 A substrate process apparatus, comprising: an ion beam source; and a substrate holder spaced apart from the ion beam source, wherein the ion beam source comprises: a plasma chamber comprising a plasma generating space; a plasma generator configured to generate plasma in the plasma generating space; a plurality of grids connected to the plasma chamber; and a grid driver configured to move one of the plurality of grids relative to the other ones of the plurality of grids. ### Claim 10 (depends on 9) The substrate process apparatus of claim 9, wherein each of the plurality of grids comprises: a grid supporting member having a ring shape; and a plurality of blocking bars coupled to the grid supporting member, wherein a plurality of grid penetration holes are provided between the plurality of blocking bars. ### Claim 11 (depends on 10) The substrate process apparatus of claim 10, wherein the plurality of grid penetration holes have a rectangular shape, when viewed in a plan view. ### Claim 12 (depends on 9) The substrate process apparatus of claim 9, wherein the plasma generator comprises an RF coil that surrounds the plasma chamber. ### Claim 13 (depends on 9) The substrate process apparatus of claim 9, wherein the plurality of grids comprises at least three grids. ### Claim 14 (depends on 9) The substrate process apparatus of claim 9, further comprising a target portion spaced apart from the ion beam source and the substrate holder, wherein the target portion comprises: a target plate; and a target holder supporting the target plate. ### Claim 15 A substrate processing method, comprising: placing a substrate in a substrate process apparatus; and emitting an ion beam from an ion beam source spaced apart from the substrate, wherein the ion beam source comprises: a plasma chamber providing a plasma generating space; a plasma generator configured to generate plasma in the plasma generating space; a first grid connected to the plasma chamber; a second grid connected to the plasma chamber; and a first grid driver connected to the first grid, wherein the first grid driver is configured to move the first grid relative to the second grid. ### Claim 16 (depends on 15) The substrate processing method of claim 15, further comprising moving the first grid relative to the second grid using the first grid driver. ### Claim 17 (depends on 16) The substrate processing method of claim 16, wherein the moving of the first grid relative to the second grid comprises rotating the first grid relative to the second grid. ### Claim 18 (depends on 16) The substrate processing method of claim 16, wherein the moving of the first grid relative to the second grid comprises horizontally moving the first grid relative to the second grid. ### Claim 19 (depends on 16) The substrate processing method of claim 16, wherein the moving of the first grid relative to the second grid comprises moving the first grid toward the second grid to change a distance between the first grid and the second grid. ### Claim 20 (depends on 15) The substrate processing method of claim 15, wherein the emitting of the ion beam from the ion beam source comprises processing the substrate using the ion beam.