# US 12,224,158 B2 · Plasma processing apparatus

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- Number: US 12,224,158 B2
- Document ID: US12224158B2
- Status: Granted
- Kind: B2
- Application number: 18/026,434
- Filed: 2022-03-09
- Published: 2024-09-05
- Granted: 2025-02-11
- Earliest claimed: 2022-03-09
- Assignees: Hitachi High-Tech Corporation
- Applicants: Hitachi High-Tech Corporation
- Inventors: Yoshinori Yoshida; Yutaka Kouzuma; Kazuyuki Hirozane
- Web page: https://patentgrep.com/patent/US12224158B2

## CPC

- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/3244: {Gas supply means}
- H01J 37/32522: {Temperature}
- H01J 37/32834: {Exhausting}
- H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
- H10P 50/242: {of Group IV materials}
- H01J 2237/3344: isotropy
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A plasma processing apparatus that can inhibit clustering of gas and supply the gas stably, including an integrated gas box configured to adjust the flow rate of gas, and a discharge portion, and the integrated gas box includes gas blocks including a flow path through which the gas flows, a heater configured to heat the flow path, a bypass path provided in the flow path, and a flow controller configured to detect the inflow amount of the gas and output the gas from the flow path to the discharge portion. The heater is configured to perform heating to a predetermined temperature based on the type of the gas. The predetermined temperature is, for example, 65° C. or more. The bypass path includes a flow path causing a change in the pressure of the gas flowing through the flow path.

## Claims

### Claim 1

A plasma processing apparatus comprising:
an integrated gas box configured to adjust a flow rate of gas, and
a discharge portion, wherein:
the integrated gas box includes gas blocks including
a flow path through which the gas flows,
a heater configured to heat the flow path,
a bypass path provided in the flow path, and
a flow controller configured to detect an inflow amount of the gas and output the gas from the flow path to the discharge portion.

### Claim 2 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the heater is configured to perform heating to a predetermined temperature based on a type of the gas.

### Claim 3 (depends on 2)

The plasma processing apparatus according to claim 2, wherein:
the predetermined temperature is equal to or more than 65° C.

### Claim 4 (depends on 3)

The plasma processing apparatus according to claim 3, wherein:
the predetermined temperature is equal to or more than 90° C.

### Claim 5 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the bypass path includes a flow path causing a change in a pressure of the gas flowing through the flow path.

### Claim 6 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the bypass path includes a bending portion having a sectional shape having an acute angle.

### Claim 7 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the bypass path has an inner surface having a projecting shape.

### Claim 8 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the bypass path has an inner surface having a recess.

### Claim 9 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the flow controller includes an input portion having a pressure of 60 kPa(A) or more.

### Claim 10 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the gas includes hydrogen fluoride.