# US 12,224,128 B2 · Multilayer electronic component

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- Number: US 12,224,128 B2
- Document ID: US12224128B2
- Status: Granted
- Kind: B2
- Application number: 18/139,444
- Filed: 2023-04-26
- Published: 2024-07-11
- Granted: 2025-02-11
- Earliest claimed: 2022-12-29
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Hyo Sung Choi; Jung Jin Park; Ho Sam Choi; Jae Won Kim; Sun Mi Kim; Jong Ho Lee
- Web page: https://patentgrep.com/patent/US12224128B2

## CPC

- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- C04B 35/4682: {based on BaTiO3 perovskite phase}
- C04B 35/632: Organic additives
- C04B 35/64: Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F})
- H01G 4/008: Selection of materials
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/1209: {characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence)}
- H01G 4/1227: {based on alkaline earth titanates}
- H01G 4/224: Housing; Encapsulation
- C04B 2235/3203: Lithium oxide or oxide-forming salts thereof
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3275: Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/96: Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE

## Abstract

A multilayer electronic component includes a body including a capacitance formation portion including a dielectric layer and an internal electrode, alternately disposed in a first direction, and a cover portion disposed on both end surfaces of the capacitance formation portion opposing each other in the first direction; and an external electrode disposed outside the body and connected to the internal electrode, wherein the cover portion contains fluorine (F), and A1 and A2 satisfy A2>A1, where A1 is an average size of a dielectric grain included in the cover portion, and A2 is an average size of a dielectric grain included in the dielectric layer.

## Claims

### Claim 1

A multilayer electronic component comprising:
a body including:
a capacitance formation portion including a dielectric layer and an internal electrode, alternately disposed in a first direction, and
a cover portion disposed on both end surfaces of the capacitance formation portion opposing each other in the first direction; and
an external electrode disposed outside the body and connected to the internal electrode,
wherein the cover portion includes fluorine (F), and
A1 and A2 satisfy A2>A1, where A1 is an average size of a dielectric grain included in the cover portion, and A2 is an average size of a dielectric grain included in the dielectric layer.

### Claim 2 (depends on 1)

The multilayer electronic component of claim 1, wherein A1 and A2 satisfy 0.55≤A1/A2≤0.585.

### Claim 3 (depends on 1)

The multilayer electronic component of claim 1, wherein, in analyzing a negative ion by time-of-flight secondary ion mass spectrometry (TOF-SIMS), a fluorine ion (F−) is detected in the cover portion.

### Claim 4 (depends on 3)

The multilayer electronic component of claim 3, wherein, in analyzing a negative ion by time-of-flight secondary ion mass spectrometry (TOF-SIMS) of the cover portion, a ratio of a detection intensity of the fluorine ion (F−) to a detection intensity of all anions is 5.78% to 12.56%.

### Claim 5 (depends on 1)

The multilayer electronic component of claim 1, wherein the cover portion comprises:
BaTiO3 as a main component, and
a subsidiary component including an oxide or a carbonate including at least one of Ca, Al, Li, Co, Zn, Mn, Mg, and S.

### Claim 6 (depends on 1)

The multilayer electronic component of claim 1, wherein the cover portion comprises:
BaTiO3 as a main component, and
at least one of Ca, Al, Li, Co, Zn, Mn, Mg, and S.

### Claim 7 (depends on 1)

The multilayer electronic component of claim 1, wherein A1 is 200 nm or more and 400 nm or less.

### Claim 8 (depends on 1)

The multilayer electronic component of claim 1, wherein an average thickness of the dielectric layer is 0.4 μm or less.

### Claim 9 (depends on 1)

The multilayer electronic component of claim 1, wherein an average thickness of the internal electrode is 0.4 μm or less.

### Claim 10 (depends on 1)

The multilayer electronic component of claim 1, wherein an average thickness of the cover portion is 15 μm or less.

### Claim 11 (depends on 1)

The multilayer electronic component of claim 1, wherein the body comprises a margin portion disposed on both end surfaces of the capacitance formation portion opposing each other in a third direction,
wherein an average thickness of the margin portion is 15 μm or less.

### Claim 12 (depends on 1)

The multilayer electronic component of claim 1, wherein the dielectric layer is free of fluorine (F).

### Claim 13 (depends on 1)

The multilayer electronic component of claim 1, wherein the dielectric layer includes a lower amount of fluorine (F) than the cover portion.

### Claim 14

A method for manufacturing a multilayer electronic component comprising a body including a capacitance formation portion including a dielectric layer and an internal electrode, alternately disposed in a first direction, and a cover portion disposed on both end surfaces of the capacitance formation portion opposing each other in the first direction, and an external electrode disposed outside the body and connected to the internal electrode, the method comprising:
a printing process including:
a process of forming a cover portion pattern by printing a first ceramic slurry including a first dielectric material and a fluorine-based compound, and
at least one of:
a process of forming a dielectric pattern by printing a second ceramic slurry including a second dielectric material, and
a process of forming an internal electrode pattern by printing a conductive paste for the internal electrode including a conductive particle for the internal electrode;
forming a stack body including the cover portion pattern, the dielectric pattern, and the internal electrode pattern;
a sintering process of sintering the stack body to obtain the body; and
a process of forming the external electrode outside the body,
wherein the first dielectric material includes BaTiO3 as a main component, and an amount of a fluorine-based compound included in the first ceramic slurry is 0.2 to 1.0 parts by weight, relative to 100 parts by weight of BaTiO3.

### Claim 15 (depends on 14)

The method of claim 14, wherein the fluorine-based compound comprises at least one of compounds represented by Formulas 1 to 4 below:
in Formulas 1 to 4,
a, b, c and d are each independently an integer of 100 to 1000.

### Claim 16 (depends on 14)

The method of claim 14, wherein the first dielectric material comprises a subsidiary component including an oxide or a carbonate including at least one of Ca, Al, Li, Co, Zn, Mn, Mg, and S.

### Claim 17 (depends on 14)

The method of claim 14, wherein the first dielectric material comprises at least one of Ca, Al, Li, Co, Zn, Mn, Mg, and S.

### Claim 18 (depends on 14)

The method of claim 14, wherein the fluorine-based compound comprises a compound represented by Formula 1:

### Claim 19 (depends on 14)

The method of claim 14, wherein the printing process includes the process of forming the dielectric pattern, and the second ceramic slurry is free of the fluorine-based compound.