# US 12,223,685 B2 · Sensing device

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- Number: US 12,223,685 B2
- Document ID: US12223685B2
- Status: Granted
- Kind: B2
- Application number: 18/120,435
- Filed: 2023-03-13
- Published: 2023-07-06
- Granted: 2025-02-11
- Earliest claimed: 2021-01-12
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: Chandra Lius; Yu-Tsung Liu
- Web page: https://patentgrep.com/patent/US12223685B2

## CPC

- G06V 10/147: Details of sensors, e.g. sensor lenses (fingerprint or palmprint sensors G06V40/13; vascular sensors G06V40/145; eye sensors G06V40/19)
- G02B 27/0961: {Lens arrays (lens arrays per se G02B3/0006)}
- G06V 40/1318: {using electro-optical elements or layers, e.g. electroluminescent sensing}
- G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

A sensing device includes a plurality of sensing sets having a plurality of lenses and a plurality of sensing units. The sensing units are configured to collect reflected light which pass through the lenses. Each sensing set adopts a structure which includes one sensing unit and multiple lenses for providing fingerprint sensing with high accuracy.

## Claims

### Claim 1

A sensing device, comprising:
a plurality of sensing sets, wherein at least one sensing set among the plurality of sensing sets includes at least two lenses and a sensing unit and is configured to allow a detected light to pass through the at least two lenses and be collected by the sensing unit; and
at least two holes disposed between the at least two lenses and the sensing unit, and including a first hole and a second hole, wherein:
the sensing unit comprises:
an upper electrode;
a lower electrode;
a lightly-doped intrinsic layer disposed between the upper electrode and the lower electrode;
a first semiconductor layer disposed between the upper electrode and the lightly-doped intrinsic layer;
a second semiconductor layer disposed between the lower electrode and the lightly-doped intrinsic layer; and
a conductive layer disposed between the first semiconductor layer and the upper electrode;
a width of the conductive layer is greater than a width of the upper electrode;
a distance between two neighboring lenses of the at least two lenses in the plurality of sensing set is not zero;
the at least two lenses include a first lens corresponding to the first hole and a second lens corresponding to the second hole; and
a first distance d1 between the sensing unit and the first hole, a second distance d2 between the first lens and the first hole, a width L of the first lens and a third distance m between the first lens and the second lens conform to an equation represented by 0<d1/d2<2*(L+m)/L.

### Claim 2 (depends on 1)

The sensing device of claim 1, further comprising a light-shielding layer which includes the at least two holes.

### Claim 3 (depends on 1)

The sensing device of claim 1, further comprising a driving layer for driving the sensing unit.

### Claim 4 (depends on 3)

The sensing device of claim 3, wherein the driving layer comprises a thin film transistor.

### Claim 5 (depends on 1)

The sensing device of claim 1, wherein the conductive layer includes an even surface.

### Claim 6 (depends on 1)

The sensing device of claim 1, wherein the width L of the first lens is smaller than or equal to 100 μm.

### Claim 7 (depends on 1)

The sensing device of claim 1, which is a fingerprint sensing device.

### Claim 8 (depends on 1)

The sensing device of claim 1, wherein the plurality of sensing sets are fabricated in a same continuous layer and/or in a same process.

### Claim 9 (depends on 1)

The sensing device of claim 1, further comprising:
a driving layer configured to drive the sensing unit;
wherein the driving layer comprises a thin film transistor, and the conductive layer and the thin film transistor are overlapped.

### Claim 10 (depends on 1)

The sensing device of claim 1, wherein a first projection range caused by a first detected light arriving at a surface of the sensing unit after passing through the first hole and a second projection range caused by a second detected light arriving at the surface of the sensing unit after passing through the second hole comprise an overlapped region, and a maximum width of the overlapped region satisfies a condition of
0<OV<L+m,
wherein OV is the maximum width of the overlapped region.

### Claim 11

A display device, comprising:
a display panel;
a sensing device disposed under the display panel and comprising a plurality of sensing sets, wherein at least one sensing set among the plurality of sensing sets includes at least two lenses and a sensing unit and is configured to allow a detected light to pass through the at least two lenses and be collected by the sensing unit; and
at least two holes disposed between the at least two lenses and the sensing unit, and including a first hole and a second hole, wherein:
the sensing unit comprises:
an upper electrode;
a lower electrode;
a lightly-doped intrinsic layer disposed between the upper electrode and the lower electrode;
a first semiconductor layer disposed between the upper electrode and the lightly-doped intrinsic layer;
a second semiconductor layer disposed between the lower electrode and the lightly-doped intrinsic layer; and
a conductive layer disposed between the first semiconductor layer and the upper electrode;
a width of the conductive layer is greater than a width of the upper electrode;
a distance between two neighboring lenses of the at least two lenses in the plurality of sensing set is not zero
the at least two lenses include a first lens corresponding to the first hole and a second lens corresponding to the second hole; and
a first distance d1 between the sensing unit and the first hole, a second distance d2 between the first lens and the first hole, a width L of the first lens and a third distance m between the first lens and the second lens conform to an equation represented by 0<d1/d2< (L+m)/L.

### Claim 12 (depends on 11)

The display device of claim 11, wherein the sensing device further comprises a light-shielding layer which includes the at least two holes.

### Claim 13 (depends on 11)

The display device of claim 11, wherein the sensing device further comprises a driving layer for driving the sensing unit.

### Claim 14 (depends on 13)

The display device of claim 13, wherein the driving layer comprises a thin film transistor.

### Claim 15 (depends on 11)

The display device of claim 11, wherein the conductive layer includes an even surface.

### Claim 16 (depends on 11)

The display device of claim 11, wherein the width L of the first lens is smaller than or equal to 100 μm.

### Claim 17 (depends on 11)

The display device of claim 11, wherein the sensing device is a fingerprint sensing device.

### Claim 18 (depends on 11)

The display device of claim 11, wherein the plurality of sensing sets are fabricated in a same continuous layer and/or in a same process.

### Claim 19 (depends on 11)

The display device of claim 11, wherein the sensing device further comprises:
a driving layer configured to drive the sensing unit;
wherein the driving layer comprises a thin film transistor, and the conductive layer and the thin film transistor are overlapped.

### Claim 20 (depends on 11)

The display device of claim 11, wherein a first projection range caused by a first detected light arriving at a surface of the sensing unit after passing through the first hole and a second projection range caused by a second detected light arriving at the surface of the sensing unit after passing through the second hole comprise an overlapped region, and a maximum width of the overlapped region satisfies a condition of
0<OV<L+m,
wherein OV is the maximum width of the overlapped region.