# US 12,223,293 B2 · Random number generation method and random number generator using inorganic scintillator

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- Number: US 12,223,293 B2
- Document ID: US12223293B2
- Status: Granted
- Kind: B2
- Application number: 17/267,911
- Filed: 2018-11-19
- Published: 2021-08-12
- Granted: 2025-02-11
- Earliest claimed: 2018-08-13
- Assignees: Eyl Inc.
- Applicants: Eyl Inc.
- Inventors: Bu Suk Jeong; Dae Hyun Nam; Jung Hyun Baik; Seong Joon Cho; Jun Ha Jin
- Web page: https://patentgrep.com/patent/US12223293B2

## CPC

- G06F 7/588: {Random number generators, i.e. based on natural stochastic processes}
- C09K 11/584: {with zinc or cadmium}
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

A random number generation method and random number generator using a ZnS scintillator. The random number generator includes: a radioisotope emission layer emitting an alpha particle or a beta particle that is emitted when an atomic nucleus decays; a polymer layer disposed under the radioisotope emission layer; an inorganic scintillator layer disposed between the radioisotope emission layer and the polymer layer and applied with an inorganic scintillator substance; and a wafer layer disposed under the polymer layer and including a photodiode detecting light produced from the inorganic scintillator layer.

## Claims

### Claim 1

A random number generator comprising:
a radioisotope emission layer emitting an alpha particle or a beta particle that is emitted when an atomic nucleus decays;
a polymer layer disposed under the radioisotope emission layer and having inorganic scintillator powders mixed therein;
a wafer layer disposed under the polymer layer and including a photodiode;
a coupler having the same width as the photodiode, and the coupler disposed between the photodiode and the polymer layer; and
a reflector disposed around the polymer layer except a part where the coupler is disposed between the photodiode and the polymer layer,
wherein
a horizontal width of the radioisotope emission layer is the same as a horizontal width of the polymer layer,
a horizontal width of the wafer layer is larger than the horizontal widths of the radioisotope emission layer and the polymer layer, and
the photodiode is formed in an upper part of the wafer layer in order to face the polymer layer.

### Claim 2 (depends on 1)

The random number generator of claim 1, wherein the inorganic scintillator powders is ZnS(Ag) and the radioisotope emission layer includes an Am241 radioisotope.

### Claim 3 (depends on 1)

The random number generator of claim 1, wherein the radioisotope emission layer and the polymer layer are disposed in direct contact without a gap therebetween.