# US 12,223,190 B2 · Measurement of representative charge loss in a block to determine charge loss state

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- Number: US 12,223,190 B2
- Document ID: US12223190B2
- Status: Granted
- Kind: B2
- Application number: 18/370,342
- Filed: 2023-09-19
- Published: 2024-01-04
- Granted: 2025-02-11
- Earliest claimed: 2022-02-18
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Patrick R. Khayat; Steven Michael Kientz; Sivagnanam Parthasarathy; Mustafa N. Kaynak; Vamsi Pavan Rayaprolu
- Web page: https://patentgrep.com/patent/US12223190B2

## CPC

- G06F 3/064: {Management of blocks}
- G11C 16/08: Address circuits; Decoders; Word-line control circuits
- G06F 3/0625: {Power saving in storage systems}
- G06F 3/0679: {Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]}
- G11C 7/04: with means for avoiding disturbances due to temperature effects
- G11C 16/10: Programming or data input circuits
- G11C 16/26: Sensing or reading circuits; Data output circuits
- G11C 16/32: Timing circuits
- G11C 16/3418: {Disturbance prevention or evaluation; Refreshing of disturbed memory data}
- G11C 29/021: {in voltage or current generators}
- G11C 29/028: {with adaption or trimming of parameters}
- G11C 29/50004: {of threshold voltage}
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A processing device in a memory sub-system detects an occurrence of a triggering event, determines respective levels of charge loss associated with a first representative wordline of a block of a memory device and with a second representative wordline of the block of the memory device, and determines whether a difference between the respective levels of charge loss satisfies a threshold criterion. Responsive to determining that the difference between the respective levels of charge loss satisfies the threshold criterion, the processing device further determines that the block is in a uniform charge loss state.

## Claims

### Claim 1

A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining respective levels of charge loss associated with a plurality of representative wordlines of a block of the memory device;
determining whether a difference between the respective levels of charge loss is greater than or equal to a threshold amount; and
responsive to determining that the difference between the respective levels of charge loss is greater than or equal to the threshold amount, determining that the block is in a mixed charge loss state.

### Claim 2 (depends on 1)

The system of claim 1, wherein the processing device is to perform operations further comprising:
detecting an occurrence of a triggering event.

### Claim 3 (depends on 2)

The system of claim 2, wherein detecting the occurrence of the triggering event comprises at least one of detecting an expiration of a periodic interval or detecting the occurrence of a power cycle event in the system.

### Claim 4 (depends on 1)

The system of claim 1, wherein the plurality of representative wordlines comprises a first wordline of the block for which associated memory cells were written and a last wordline of the block for which associated memory cells were written.

### Claim 5 (depends on 1)

The system of claim 1, wherein the processing device is to perform operations further comprising:
receiving a request to perform a read operation on the block of the memory device; and
responsive to determining that the block is in the mixed charge loss state, performing the read operation on the block using a mixed SCL compensation technique.

### Claim 6 (depends on 1)

The system of claim 1, wherein the processing device is to perform operations further comprising:
responsive to determining that the difference between the respective levels of charge loss is less than the threshold amount, determining that the block is in a uniform charge loss state.

### Claim 7 (depends on 6)

The system of claim 6, wherein the processing device is to perform operations further comprising:
receiving a request to perform a read operation on the block of the memory device; and
responsive to determining that the block is in the uniform charge loss state, performing the read operation on the block using a uniform charge loss compensation technique.

### Claim 8

A method comprising:
determining respective levels of charge loss associated with a plurality of representative wordlines of a block of a memory device;
determining whether a difference between the respective levels of charge loss is greater than or equal to a threshold amount; and
responsive to determining that the difference between the respective levels of charge loss is greater than or equal to the threshold amount, determining that the block is in a mixed charge loss state.

### Claim 9 (depends on 8)

The method of claim 8, further comprising:
detecting an occurrence of a triggering event.

### Claim 10 (depends on 9)

The method of claim 9, wherein detecting the occurrence of the triggering event comprises at least one of detecting an expiration of a periodic interval or detecting the occurrence of a power cycle event.

### Claim 11 (depends on 8)

The method of claim 8, wherein the plurality of representative wordlines comprises a first wordline of the block for which associated memory cells were written and a last wordline of the block for which associated memory cells were written.

### Claim 12 (depends on 8)

The method of claim 8, further comprising:
receiving a request to perform a read operation on the block of the memory device; and
responsive to determining that the block is in the mixed charge loss state, performing the read operation on the block using a mixed SCL compensation technique.

### Claim 13 (depends on 8)

The method of claim 8, further comprising:
responsive to determining that the difference between the respective levels of charge loss is less than the threshold amount, determining that the block is in a uniform charge loss state.

### Claim 14 (depends on 13)

The method of claim 13, further comprising:
receiving a request to perform a read operation on the block of the memory device; and
responsive to determining that the block is in the uniform charge loss state, performing the read operation on the block using a uniform charge loss compensation technique.

### Claim 15

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
determining respective levels of charge loss associated with a plurality of representative wordlines of a block of a memory device;
determining whether a difference between the respective levels of charge loss is greater than or equal to a threshold amount; and
responsive to determining that the difference between the respective levels of charge loss is greater than or equal to the threshold amount, determining that the block is in a mixed charge loss state.

### Claim 16 (depends on 15)

The non-transitory computer-readable storage medium of claim 15, wherein the instructions cause the processing device to perform operations further comprising:
detecting an occurrence of a triggering event, wherein detecting the occurrence of the triggering event comprises at least one of detecting an expiration of a periodic interval or detecting the occurrence of a power cycle event.

### Claim 17 (depends on 15)

The non-transitory computer-readable storage medium of claim 15, wherein the plurality of representative wordlines comprises a first wordline of the block for which associated memory cells were written and a last wordline of the block for which associated memory cells were written.

### Claim 18 (depends on 15)

The non-transitory computer-readable storage medium of claim 15, wherein the instructions cause the processing device to perform operations further comprising:
receiving a request to perform a read operation on the block of the memory device; and
responsive to determining that the block is in the mixed charge loss state, performing the read operation on the block using a mixed SCL compensation technique.

### Claim 19 (depends on 15)

The non-transitory computer-readable storage medium of claim 15, wherein the instructions cause the processing device to perform operations further comprising:
responsive to determining that the difference between the respective levels of charge loss is less than the threshold amount, determining that the block is in a uniform charge loss state.

### Claim 20 (depends on 19)

The non-transitory computer-readable storage medium of claim 19, wherein the instructions cause the processing device to perform operations further comprising:
receiving a request to perform a read operation on the block of the memory device; and
responsive to determining that the block is in the uniform charge loss state, performing the read operation on the block using a uniform charge loss compensation technique.