# US 12,222,651 B2 · Resist underlayer film forming composition having a disulfide structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,222,651 B2 - Document ID: US12222651B2 - Status: Granted - Kind: B2 - Application number: 16/964,869 - Filed: 2019-02-01 - Published: 2021-03-04 - Granted: 2025-02-11 - Earliest claimed: 2018-02-02 - Assignees: Nissan Chemical Corporation - Applicants: Nissan Chemical Corporation - Inventors: Takafumi Endo; Yuichi Goto; Yasunobu Someya; Ryuta Mizuochi; Satoshi Kamibayashi - Web page: https://patentgrep.com/patent/US12222651B2 ## CPC - G03F 7/094: {Multilayer resist systems, e.g. planarising layers} - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - C08G 59/42: Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof - C08K 5/372: Sulfides {, e.g. R-(S)x-R'} - C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins - C09D 179/04: Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors - H10P 76/204: {of organic photoresist masks} - H10P 76/2041: {Photolithographic processes} - G03F 7/16: Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) - G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) - G03F 7/30: Imagewise removal using liquid means - H10P 14/683: {carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06) - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups. ## Claims ### Claim 1 A resist underlayer film forming composition comprising a solvent and a reaction product of a tri- or higher functional compound and a bi- or higher functional compound having at least one disulfide linkage, wherein the tri- or higher functional compound is a compound containing three or more epoxy groups, wherein the bi- or higher functional compound is a dicarboxylic acid comprising a disulfide linkage, and wherein the functional groups of the tri- or higher functional compound are the same. ### Claim 2 (depends on 1) The resist underlayer film forming composition according to claim 1, wherein the dicarboxylic acid comprising a disulfide linkage is represented by the following formula (1): [Chemical formula 1] HOOC—X1—S—S—X2—COOH formula(1) wherein each of X1 and X2 independently represents an unsubstituted or substituted alkylene group having 1 to 10 carbon atoms, an unsubstituted or substituted arylene group having 6 to 40 carbon atoms, or a combination thereof. ### Claim 3 (depends on 2) The resist underlayer film forming composition according to claim 2, wherein, in formula (1), each of X1 and X2 is independently an alkylene group having 1 to 3 carbon atoms. ### Claim 4 (depends on 1) The resist underlayer film forming composition according to claim 1, wherein the tri- or higher functional compound comprises a heterocyclic structure. ### Claim 5 (depends on 4) The resist underlayer film forming composition according to claim 4, wherein the heterocyclic structure comprises a triazine structure. ### Claim 6 (depends on 1) The resist underlayer film forming composition according to claim 1, which further comprises a crosslinking catalyst. ### Claim 7 (depends on 1) The resist underlayer film forming composition according to claim 1, which further comprises a crosslinking agent. ### Claim 8 (depends on 1) The resist underlayer film forming composition according to claim 1, which further comprises a surfactant. ### Claim 9 (depends on 1) A resist underlayer film, which is a baked material of an applied film comprising the resist underlayer film forming composition according to claim 1. ### Claim 10 (depends on 1) A method for forming a resist pattern for use in producing a semiconductor device, the method comprising the steps of: applying the resist underlayer film forming composition according to claim 1 onto a semiconductor substrate and baking the applied composition to form a resist underlayer film; applying a resist onto the resist underlayer film and baking the applied resist to form a resist film; subjecting the semiconductor substrate covered with the resist underlayer film and the resist film to exposure; and subjecting the exposed resist film to development. ### Claim 11 (depends on 1) A method for producing a semiconductor device, comprising the steps of: forming a resist underlayer film comprising the resist underlayer film forming composition according to claim 1 on a semiconductor substrate; forming a resist film on the resist underlayer film; irradiating the resist film with a light or an electron beam to form an irradiated resist film and subjecting the irradiated resist film to development to form a resist pattern; etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film; and processing the semiconductor substrate using the patterned resist underlayer film. ### Claim 12 (depends on 1) A method for producing a patterned substrate, comprising the steps of: applying the resist underlayer film forming composition according to claim 1 onto a semiconductor substrate and baking the applied composition to form a resist underlayer film; applying a resist onto the resist underlayer film and baking the applied resist to form a resist film; subjecting the semiconductor substrate covered with the resist underlayer film and the resist film to exposure; and subjecting the exposed resist film to development to perform patterning.