Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer

An apparatus for measuring parameters of plasma, the apparatus comprising:

• a cutoff probe;
• and
• at least one processor configured to provide, to the cutoff probe, a signal for measuring the parameters of the plasma in a plasma processing apparatus,
• wherein the cutoff probe comprises:
• a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by the at least one processor;
• a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave that has been emitted by the first antenna and transferred through the plasma;
• a first signal line connecting the first antenna to the at least one processor;
• a second signal line connecting the second antenna to the at least one processor;
• a first insulating layer covering the first signal line;
• a second insulating layer covering the second signal line;
• a first shield covering the first insulating layer;
• a second shield covering the second insulating layer;
• an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield;
• a first antenna protection layer comprising a first insulating material and covering the first antenna;
• and
• a second antenna protection layer comprising a second insulating material and covering the second antenna,
• wherein the at least one processor is configured to provide the signal to the first antenna in a frequency scanning method, and to generate a microwave band spectrum of a forward transmission gain of the plasma based on the microwave emitted by the first antenna, transferred through the plasma, and detected by the second antenna.