# US 12,222,317 B2 · Integrated circuit with BioFETs

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- Number: US 12,222,317 B2
- Document ID: US12222317B2
- Status: Granted
- Kind: B2
- Application number: 18/525,583
- Filed: 2023-11-30
- Published: 2024-03-28
- Granted: 2025-02-11
- Earliest claimed: 2020-08-31
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Tung-Tsun Chen; Yi-Hsing Hsiao; Jui-Cheng Huang; Yu-Jie Huang
- Web page: https://patentgrep.com/patent/US12222317B2

## CPC

- G01N 27/4148: {Integrated circuits therefor, e.g. fabricated by CMOS processing}
- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- G01N 33/54373: {involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings}
- G01N 33/56966: {Animal cells}
- H10P 90/1914: {using bonding}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

## Claims

### Claim 1

An integrated circuit (IC) structure, comprising:
a biologically sensitive field-effect transistor (BioFET) in a semiconductor substrate;
a dielectric layer over a backside surface of the semiconductor substrate, the dielectric layer having a sensing well extending through the dielectric layer to a channel region of the BioFET;
a biosensing film lining the sensing well in the dielectric layer;
a plurality of fluid channel walls over the biosensing film and defining a fluid containment region over the sensing well extending through the dielectric layer;
a first heater in the semiconductor substrate having at least a portion of the first heater overlapping with the fluid containment region; and
a coating of cardiac cell binding agent over the biosensing film and under the plurality of fluid channel walls, wherein one of the plurality of fluid channel walls forms an interface with the coating of cardiac cell binding agent, and an entirety of the interface vertically overlaps with the first heater in the semiconductor substrate.

### Claim 2 (depends on 1)

The IC structure of claim 1, further comprising:
a second heater over a front-side of the semiconductor substrate, and formed of a same material as a gate of the BioFET.

### Claim 3 (depends on 1)

The IC structure of claim 1, further comprising:
a second heater over a front-side of the semiconductor substrate, and formed of polysilicon.

### Claim 4 (depends on 1)

The IC structure of claim 1, wherein the first heater is a doped region in the semiconductor substrate, and the doped region has a same dopant as source/drain regions of the BioFET.

### Claim 5 (depends on 1)

The IC structure of claim 1, wherein the first heater is a doped region in the semiconductor substrate, and the doped region has a same dopant as a well region in the semiconductor substrate.

### Claim 6 (depends on 1)

The IC structure of claim 1, further comprising:
a temperature-sensing diode in the semiconductor substrate, wherein the temperature-sensing diode is laterally between the first heater and the BioFET.

### Claim 7 (depends on 1)

The IC structure of claim 1, further comprising:
an interconnect structure over a front side of the semiconductor substrate; and
a second heater in the interconnect structure.

### Claim 8 (depends on 7)

The IC structure of claim 7, wherein the second heater is formed of a different material than the first heater.

### Claim 9

An IC structure comprising:
a BioFET comprising a channel region in a semiconductor layer, and a gate structure over a front side of the channel region;
an interconnect structure over the gate structure;
a dielectric layer having a sensing well extending through the dielectric layer to a backside of the channel region of the BioFET;
a fluid containment region bound by a plurality of fluid channel walls disposed over the dielectric layer;
a first heater in the semiconductor layer;
a second heater in the interconnect structure, the second heater having a thermal conductivity lower than a thermal conductivity of metal lines in the interconnect structure; and
a coating of cardiac cell binding agent over the dielectric layer, wherein one of the plurality of fluid channel walls forms an interface with the coating of cardiac cell binding agent, and an entirety of the interface vertically overlaps with the first heater in the semiconductor layer.

### Claim 10 (depends on 9)

The IC structure of claim 9, wherein the interface formed by the coating of cardiac cell binding agent biological material coating and the one of the plurality of fluid channel walls does not overlap with the second heater.

### Claim 11 (depends on 9)

The IC structure of claim 9, wherein the second heater is formed of a metal material, and the first heater is formed of a semiconductor material.

### Claim 12

An IC structure comprising:
a BioFET comprising a channel region in a semiconductor layer, and a gate structure over a front side of the channel region;
an interconnect structure over the gate structure;
a dielectric layer having a sensing well extending through the dielectric layer to a backside of the channel region of the BioFET;
a fluid containment region bound by a plurality of fluid channel walls disposed over the dielectric layer;
a first heater in the semiconductor layer;
a temperature sensing device in the semiconductor layer; and
a coating of cardiac cell binding agent over the dielectric layer, wherein one of the plurality of fluid channel walls forms an interface with the coating of cardiac cell binding agent, and an entirety of the interface vertically overlaps with the first heater in the semiconductor layer.

### Claim 13 (depends on 12)

The IC structure of claim 12, further comprising:
a second heater in the interconnect structure, wherein the second heater has a line width less than a line width of a metal line in the interconnect structure.

### Claim 14 (depends on 13)

The IC structure of claim 13, wherein the second heater has a thermal conductivity lower than the metal line in the interconnect structure.

### Claim 15 (depends on 12)

The IC structure of claim 12, further comprising:
a biosensing film lining the sensing well in the dielectric layer.

### Claim 16 (depends on 1)

The IC structure of claim 1, wherein at least a portion of the first heater is located beyond an outermost side of one of the fluid channel walls.

### Claim 17 (depends on 9)

The IC structure of claim 9, wherein the first heater extends laterally beyond both opposite side surfaces of one of the fluid channel walls.

### Claim 18 (depends on 9)

The IC structure of claim 9, wherein the second heater is formed of a metal different from copper.

### Claim 19 (depends on 12)

The IC structure of claim 12, wherein the first heater extends laterally beyond both opposite side surfaces of one of the fluid channel walls.

### Claim 20 (depends on 13)

The IC structure of claim 13, wherein the second heater comprises titanium aluminum nitride, platinum, indium tin oxide, or titanium nitride.