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AssigneeSeoul National University R&Db Foundation
InventorsJong-Ho Lee, Won-Jun Shin
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Provided is a sensing method of a FET-type sensor using electric charge storage engineering. The sensing method comprises the following steps to improve reactivity and selectivity to a gas to be sensed: (a) applying a preset erase voltage (Erase bias) or program voltage (Program bias) to the control gate according to the type of gas to be sensed to change a threshold voltage of the FET transducer and control the charge at an interface between the passivation layer and the sensing material layer; and (b) in the recovery phase where the gas detection reaction is terminated and the original state is returned, applying a pre-bias greater or less than a read voltage to the control gate according to the type of gas detected, and then applying the read voltage to the drain and the source of the FET transducer to increase the desorption rate of the detected gas.
A sensing method of a FET-type sensor comprising a FET transducer with a horizontal floating gate, a passivation layer provided on at least an upper portion of the FET transducer, a control gate provided on a portion of the passivation layer spaced apart from the floating gate to face the floating gate, and a sensing material layer provided on a part of the control gate facing the floating gate, a region between the control gate and the floating gate, and a part of an upper portion of the passivation layer provided on the floating gate, which comprises the following step to improve or decrease reactivity to a gas to be sensed:
Dependencies are inferred from the claim text.