Microfluidic film and method for fabricating the microfluidic film

A method of fabricating a microfluidic film, the method comprising:

• fabricating a basic mold, the basic mold comprising a base member, a first base groove formed on the base member to extend in a longitudinal direction and having a storage space therein, a second base groove formed on the base member, being spaced apart from the first base groove and having a storage space therein, and a third base groove formed between the first base groove and the second base groove so that the first base groove and the second base groove communicate with each other;
• fabricating a master mold that is repeatedly usable by using the basic mold as a template;
• and
• fabricating a microfluidic film by using the master mold as a template, the microfluidic film comprising a microchannel through which a fluid flows and a through passage for communicating with the microfluidic film stacked on an upper portion or a lower portion of the microchannel,
• wherein, in the fabricating of the basic mold, the base member is a silicon wafer, and the fabricating of the basic mold comprises:
• a first exposure operation in which a first photoresist is applied onto the silicon wafer, a first mask having a first pattern for forming the third base groove therein is disposed at an upper portion of the first photoresist and light is irradiated to the first mask;
• and
• a first etching exposure operation in which the silicon wafer that has undergone the first exposure operation is etched by using a developing agent,
• wherein the first base groove comprises a first base lower groove having a small width of a lower part and a first base upper groove communicating with an upper part of the first base lower groove and extending upward, and
• the method further comprises:
• a second exposure operation in which, after the first photoresist is removed, a second photoresist is applied onto the silicon wafer, a second mask having a second pattern for forming the first base lower groove therein is disposed at an upper portion of the second photoresist and light is irradiated onto the second mask;
• a second etching operation in which the silicon wafer that has undergone the second exposure operation is etched by using a developing agent;
• a third exposure operation in which, after the second photoresist is removed, a third photoresist is applied onto the silicon wafer, a third mask having a third pattern for forming the first base upper groove and a fourth pattern for forming the second base groove therein is disposed at an upper portion of the third photoresist and light is irradiated onto the third mask;
• and
• a third etching operation in which the silicon wafer that has undergone the third exposure operation is etched by using a developing agent.