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US 12,219,783 B2Granted
Semiconductor devices and hybrid transistors
AssigneeMicron Technology, Inc.
InventorsKamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy
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Abstract
Semiconductor devices are disclosed. A semiconductor device may include a hybrid transistor configured in a vertical orientation. The hybrid transistor may include a gate electrode, a drain material, a source material, and a channel material operatively coupled between the drain material and the source material. The source material and the drain material include a first material and the channel material includes a second, different material.
Claims16
A semiconductor device, comprising:
- a hybrid transistor configured in a vertical orientation and including:
- a gate electrode;
- a drain material;
- a source material;
- and
- a channel material operatively coupled between the drain material and the source material, wherein the source material and the drain material include a first material and the channel material includes a second, different material, wherein the channel material has a length that is less than a length of the gate electrode.
3 more elements
A semiconductor device, comprising:
- a hybrid transistor configured in a vertical orientation and including:
- a gate electrode;
- a drain material;
- a source material;
- and
- a channel material operatively coupled between the drain material and the source material, wherein the source material and the drain material include a first material and the channel material includes a second, different material, wherein the channel material exhibits a tapered width from the source material to the drain material.
3 more elements
A semiconductor device, comprising:
- a hybrid transistor comprising:
- a channel region including an IGZO material;
- a drain region and a source region disposed on opposing ends of the channel region, the drain region and the source region each including a doped silicon material;
- and
- a gate electrode, wherein the gate electrode is one of a single-sided gate, a dual-sided gate, or a tri-sided gate.
2 more elements
A semiconductor device, comprising:
- a base material;
- and
- a transistor supported by the base material and comprising:
- a gate electrode;
- a drain region including a drain material;
- a source region including a source material;
- and
- a channel region including a channel material operatively coupled between the drain material and the source material, wherein the source region, the channel region, and the drain region extend in a stack substantially vertically from the base material;
- and
- a first conductive material coupled with the source material and a second conductive material coupled to the drain material, wherein each of the first conductive material and the second conductive material is arranged substantially perpendicular to the source material, the channel material, and the drain material.
7 more elements
Dependencies are inferred from the claim text.