Device for generating laser radiation

A diode laser having a layer structure, the layer structure comprising:

• first n-type functional layers;
• a metal n-contact;
• an active layer which is configured for generating electromagnetic radiation and which is arranged on the first functional layers;
• second p-type functional layers which are arranged on the active layer, wherein the second functional layers comprise first p-type layers and second p-type layers, wherein the first p-type layers comprise a p-type waveguide layer and a p-type cladding layer, and the second p-type layers comprise a p-type contact layer;
• a metal p-contact;
• a current barrier which is introduced between the first p-type layers and the second p-type layers;
• and
• at least one facet for coupling out electromagnetic radiation along a first axis,
• wherein the first functional layers, the active layer and the second functional layers are stacked along a second axis,
• wherein the current barrier extends along a third axis,
• wherein the current barrier has at least one opening, and
• wherein a first width of the opening of the current barrier along the third axis is smaller than a second width of the metal p-contact along the third axis, and a projection of the first width onto the metal p-contact lies within the second width;
• wherein the current barrier is formed by the introduction of impurity atoms into the first p-type layers by implantation or diffusion;
• wherein a specific electrical resistance of the current barrier is more than double the amount of a specific electrical resistance of the layer structure, and
• wherein the thickness of the first p-type layers is less than 2 μm and the thickness of the second p-type layers is greater than 0.5 μm.