# US 12,218,300 B2 · Light emitting diode display device and method of fabricating light emitting diode display device

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- Number: US 12,218,300 B2
- Document ID: US12218300B2
- Status: Granted
- Kind: B2
- Application number: 17/778,274
- Filed: 2020-09-02
- Published: 2022-12-08
- Granted: 2025-02-04
- Earliest claimed: 2019-12-24
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Kyu Oh Kwon; Jae Min Sim; Seung Jun Lee; Jung Hun Choi
- Web page: https://patentgrep.com/patent/US12218300B2

## CPC

- H10W 90/00: Package configurations
- H10H 20/01: Manufacture or treatment
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H 20/0133: {with a substrate not being Group III-V materials}
- H10H 20/032: {of electrodes}
- H10H 20/0364: {of interconnections}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The present disclosure relates to an LED display device, and more particularly, to an LED display device including a repair structure for a deteriorated pixel. In the present disclosure, a subLED electrically connected to first and second connecting electrodes for applying a voltage to a LED is disposed on a deteriorated LED. Thus, deterioration of a display quality due to a deteriorated pixel is prevented. Since it is not required to remove a deteriorated LED, a fabrication cost is reduced and a process efficiency is improved.

## Claims

### Claim 1

A light emitting diode (LED) display device, comprising:
a substrate;
an LED including a first semiconductor layer, a first active layer and a second semiconductor layer sequentially disposed and corresponding to a first emission area, a second active layer on the second semiconductor layer and corresponding to a second emission area overlapping a portion of the first emission area, a third semiconductor layer on the second active layer, a third active layer on the second semiconductor layer and corresponding to a third emission area overlapping another portion of the first emission area and a fourth semiconductor layer on the third active layer;
a first transistor on a portion of the substrate for driving the first active layer;
a second transistor on another portion of the substrate for driving the second active layer; and
a third transistor on the first transistor over the portion of the substrate for driving the third active layer.

### Claim 2 (depends on 1)

The LED display device according to claim 1, wherein a first pad electrode is disposed under the first semiconductor layer, and third and fourth pad electrodes are disposed on the third and fourth semiconductor layers, respectively, and
wherein a second pad electrode is disposed along an edge of the second semiconductor layer and contacts a side surface of the second semiconductor layer.

### Claim 3 (depends on 2)

The LED display device according to claim 2, wherein an insulating layer is disposed along an edge of the first pad electrode, the first semiconductor layer and the first active layer.

### Claim 4 (depends on 1)

The LED display device according to claim 1, wherein the first semiconductor layer, the third semiconductor layer and the fourth semiconductor layer include a semiconductor material of a negative type gallium nitride (n-GaN) group, and the second semiconductor layer includes a semiconductor material of a positive type gallium nitride (p-GaN) group.

### Claim 5 (depends on 1)

The LED display device according to claim 1, wherein the first semiconductor layer, the third semiconductor layer and the fourth semiconductor layer include a semiconductor material of a positive type gallium nitride (p-GaN) group, and the second semiconductor layer includes a semiconductor material of a negative type gallium nitride (n-GaN) group.

### Claim 6 (depends on 1)

The LED display device according to claim 1, wherein the first active layer is doped with europium (Eu).

### Claim 7 (depends on 2)

The LED display device according to claim 2, wherein the first pad electrode is electrically connected to a first driving drain electrode of a first driving transistor of the first transistor,
wherein the second pad electrode is electrically connected to a common line,
wherein the third pad electrode is electrically connected to a second driving drain electrode of a second driving transistor of the second transistor, and
wherein the fourth pad electrode is electrically connected to a third driving drain electrode of a third driving transistor of the third transistor.

### Claim 8 (depends on 7)

The LED display device according to claim 7, wherein first to third driving gate electrodes of the first to third driving transistors are electrically connected to first to third switching source electrodes of first to third switching transistors, respectively,
wherein the first to third switching gate electrodes of the first to third switching transistors are electrically connected to a gate line,
wherein first to third driving source electrodes of the first to third driving transistors are electrically connected to a power line, and
wherein first to third switching source electrodes of the first to third switching transistors are electrically connected to a data line.

### Claim 9 (depends on 2)

The LED display device according to claim 2, wherein the first pad electrode is electrically connected to a first driving drain electrode of a first driving transistor of the first transistor,
wherein the second pad electrode is electrically connected to a power line,
wherein the third pad electrode is electrically connected to a second driving drain electrode of a second driving transistor of the second transistor, and
wherein the fourth pad electrode is electrically connected to a third driving drain electrode of a third driving transistor of the third transistor.

### Claim 10 (depends on 9)

The LED display device according to claim 9, wherein first to third driving gate electrodes of the first to third driving transistors are electrically connected to first to third switching drain electrodes of first to third switching transistors, respectively,
wherein the first to third switching gate electrodes of the first to third switching transistors are electrically connected to a gate line,
wherein first to third driving source electrodes of the first to third driving transistors are electrically connected to a common line, and
wherein first to third switching source electrodes of the first to third switching transistors electrically connected to a data line.

### Claim 11 (depends on 10)

The LED display device according to claim 10, wherein the first to third driving transistors include the first to third driving gate electrodes, first to third driving anti-insulating patterns, first to third driving active layers having first to third driving source and drain regions, and first to third driving source and drain electrodes, and
wherein the first to third switching transistors include the first to third switching gate electrodes, first to third switching anti-insulating patterns, first to third switching active layers having first to third switching source and drain regions, and first to third switching source and drain electrodes.

### Claim 12

A method of fabricating a light emitting diode (LED) display device, the method comprising:
a) sequentially forming an undoped semiconductor layer, a first semiconductor material layer, an active material layer and a second semiconductor material layer on a growth substrate;
b) forming a first insulating layer having a first concave portion on the second semiconductor material layer;
c) sequentially forming a second active layer and a third semiconductor layer in the first concave portion on the second semiconductor material layer;
d) after forming a second concave portion in the first insulating layer, sequentially forming a second active layer and a third semiconductor layer in the second concave portion on the second semiconductor material layer;
e) forming a first semiconductor layer, a first active layer and a second semiconductor layer by patterning the first semiconductor material layer, the active material layer and the second semiconductor material layer;
f) forming an insulating layer along an edge of the first semiconductor layer and the first active layer;
g) forming a second pad electrode along an edge of the second semiconductor layer, a third pad electrode on the third semiconductor layer, and a fourth pad electrode on the fourth semiconductor layer over the insulating layer;
h) removing the growth substrate and the undoped semiconductor layer; and
i) forming a first pad electrode under the first semiconductor layer.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the step (d) comprises forming a second insulating layer on the third semiconductor layer.

### Claim 14 (depends on 12)

The method according to claim 12, further comprising, before the step (c), removing the first insulating layer.

### Claim 15 (depends on 8)

The LED display device according to claim 8, wherein the first to third driving transistors include the first to third driving gate electrodes, first to third driving anti-insulating patterns, first to third driving active layers having first to third driving source and drain regions, and first to third driving source and drain electrodes, and
wherein the first to third switching transistors include the first to third switching gate electrodes, first to third switching anti-insulating patterns, first to third switching active layers having first to third switching source and drain regions, and first to third switching source and drain electrodes.