# US 12,218,289 B2 · Packaged white light emitting device comprising photoluminescence layered structure

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,218,289 B2
- Document ID: US12218289B2
- Status: Granted
- Kind: B2
- Application number: 18/135,925
- Filed: 2023-04-18
- Published: 2023-11-30
- Granted: 2025-02-04
- Earliest claimed: 2019-03-18
- Assignees: Bridgelux, Inc.
- Applicants: Intematix Corporation
- Inventors: Jun-Gang Zhou; Gang Wang; Yi-Qun Li
- Web page: https://patentgrep.com/patent/US12218289B2

## CPC

- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/8513: {having two or more wavelength conversion materials}
- C09K 11/616: {with alkali or alkaline earth metals}
- C09K 11/617: {Silicates}
- C09K 11/665: {with alkali or alkaline earth metals}
- C09K 11/77348: {Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides}
- C09K 11/7774: {Aluminates}
- H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient}
- H10H 20/856: Reflecting means
- H10W 90/00: Package configurations
- C09K 11/0883: {Arsenides; Nitrides; Phosphides}
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- Y02B 20/00: Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y02B: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

## Abstract

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

## Claims

### Claim 1

A light emitting device comprising:
a cavity having a cavity floor;
a first Light Emitting Diode (LED) comprising a first LED chip for generating light with a dominant wavelength from 440 nm to 470 nm and a first photoluminescence layer at least partially covering a light emitting face of the first LED chip;
a second LED chip for generating light with a dominant wavelength from 440 nm to 470 nm; and
a second photoluminescence layer covering the first LED and the second LED chip, the second photoluminescence layer comprising a photoluminescence material for generating light with a peak emission wavelength from 500 nm to 650 nm,
wherein the first LED and the second LED chip are mounted on the cavity floor; and
wherein the first photoluminescence layer comprises at least 75 weight percent (wt %) of a manganese-activated fluoride photoluminescence material of a total photoluminescence material content of the first photoluminescence layer.

### Claim 2 (depends on 1)

The light emitting device of claim 1, wherein the manganese-activated fluoride photoluminescence material is selected from the group consisting of: K2SiF6:Mn4+, K2TiF6:Mn4+, and K2GeF6:Mn4+.

### Claim 3 (depends on 1)

The light emitting device of claim 1, wherein the device comprises a Chip On Board (COB) packaged light emitting device comprising a substrate and a peripheral wall, wherein the peripheral wall in conjunction with the substrate define the cavity, and wherein the cavity floor comprises at least a part of the substrate.

### Claim 4 (depends on 3)

The light emitting device of claim 3, wherein the first LED comprises a Chip Scale Packaged (CSP) LED comprising the first LED chip and the first photoluminescence layer.

### Claim 5 (depends on 1)

The light emitting device of claim 1, wherein the device comprises a packaged light emitting device comprising a base and side walls, wherein the side walls in conjunction with the base define the cavity, and wherein the cavity floor comprises at least a part of the base.

### Claim 6 (depends on 5)

The light emitting device of claim 5, wherein the first LED comprises a Chip Scale Packaged (CSP) LED comprising the first LED chip and the first photoluminescence layer.

### Claim 7 (depends on 6)

The light emitting device of claim 6, wherein the first LED comprises a light reflective material for preventing light emission from light emitting side faces of the first LED chip.

### Claim 8 (depends on 7)

The light emitting device of claim 7, wherein the first LED comprises a light transmissive material disposed between the light reflective material and the light emitting side faces of the first LED chip.

### Claim 9 (depends on 6)

The light emitting device of claim 6, wherein the first photoluminescence layer covers each light emitting face of the first LED chip.

### Claim 10

A light emitting device comprising:
a substrate;
a first Chip Scale Packaged (CSP) Light Emitting Diode (LED) for generating light of a first color temperature; and
a second CSP LED for generating light of a second color temperature;
wherein the first and the second CSP LEDs each comprise:
a respective LED chip for generating light with a dominant wavelength from 440 nm to 470 nm;
a respective first photoluminescence layer that at least partially covers a light emitting face of the LED chip, said first photoluminescence layer comprising at least 75 weight percent (wt %) of a manganese-activated fluoride photoluminescence material of a total photoluminescence material content of the first photoluminescence layer; and
a respective second photoluminescence layer comprising a photoluminescence material for generating light with a peak emission wavelength from 500 nm to 650 nm, wherein the second photoluminescence layer covers the first photoluminescence layer; and
wherein the first CSP LED and the second CSP LED are mounted on the substrate.

### Claim 11 (depends on 10)

The light emitting device of claim 10, wherein at least one of the first CSP LED or the second CSP LED comprises a light reflective material for preventing light emission from light emitting side faces of the LED chip.

### Claim 12 (depends on 11)

The light emitting device of claim 11, wherein at least one of the first CSP LED or the second CSP LED comprises a light transmissive material disposed between the light reflective material and the light emitting side faces of the LED chip.

### Claim 13 (depends on 10)

The light emitting device of claim 10, wherein the manganese-activated fluoride photoluminescence material is selected from the group consisting of: K2SiF6:Mn4+, K2TiF6:Mn4+, and K2GeF6:Mn4+.

### Claim 14 (depends on 10)

The light emitting device of claim 10, comprising a light transmissive material layer covering the second photoluminescence layer.

### Claim 15 (depends on 14)

The light emitting device of claim 14, wherein the light transmissive material layer comprises at least one of a glass layer or a light transmissive polymer film.