# US 12,218,285 B2 · Display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,285 B2 - Document ID: US12218285B2 - Status: Granted - Kind: B2 - Application number: 17/545,165 - Filed: 2021-12-08 - Published: 2022-07-28 - Granted: 2025-02-04 - Earliest claimed: 2021-01-27 - Assignees: Innolux Corporation - Applicants: InnoLux Corporation - Inventors: Jia-Yuan Chen; Tsung-Han Tsai; Kuan-Feng Lee - Web page: https://patentgrep.com/patent/US12218285B2 ## CPC - H10H 20/855: Optical field-shaping means, e.g. lenses - H10W 90/00: Package configurations - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/831: characterised by their shape - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A display device is provided. The display device includes a substrate, a driving layer, a light-emitting element, and a light-shielding element. The substrate has a surface. The driving layer includes a thin-film transistor. The thin-film transistor is disposed on the surface. The light-emitting element has a P-end and an N-end. The light-emitting element is disposed on the driving layer and arranged in such a way that a virtual line connecting the P-end and the N-end is parallel to the surface of the substrate. The light-shielding element is disposed between the light-emitting element and the thin-film transistor for blocking a light emitted from the light-emitting element from irradiating the thin-film transistor. ## Claims ### Claim 1 A display device, comprising: a substrate having a surface; a driving layer comprising a thin-film transistor, wherein the thin-film transistor is disposed on the surface; a light-emitting element having a P-end and an N-end, wherein the light-emitting element is disposed on the driving layer and arranged in such a way that a virtual line connecting the P-end and the N-end is parallel to the surface; a light-shielding element disposed between the light-emitting element and the thin-film transistor for blocking a light emitted from the light-emitting element from irradiating the thin-film transistor; and a pair of alignment electrodes for aligning the light-emitting element, wherein the light-shielding element is conformally formed on the pair of alignment electrodes. ### Claim 2 (depends on 1) The display device as claimed in claim 1, wherein the light-shielding element partially overlaps the pair of alignment electrodes. ### Claim 3 (depends on 1) The display device as claimed in claim 1, wherein there is a gap between the pair of alignment electrodes, and the light-shielding element at least partially overlaps the gap. ### Claim 4 (depends on 1) The display device as claimed in claim 1, wherein the pair of alignment electrodes are disposed on the driving layer. ### Claim 5 (depends on 4) The display device as claimed in claim 4, wherein the light-shielding element is a conductor. ### Claim 6 (depends on 5) The display device as claimed in claim 5, wherein the pair of alignment electrodes are closer to the light-emitting element than the light-shielding element. ### Claim 7 (depends on 4) The display device as claimed in claim 4, wherein the light-shielding element is an insulator. ### Claim 8 (depends on 7) The display device as claimed in claim 7, wherein the light-shielding element is closer to the light-emitting element than the pair of alignment electrodes. ### Claim 9 (depends on 7) The display device as claimed in claim 7, wherein the light-shielding element has a distributed Bragg reflector (DBR) structure. ### Claim 10 (depends on 1) The display device as claimed in claim 1, wherein the light-shielding element at least partially overlaps the thin-film transistor and the light-emitting element. ### Claim 11 (depends on 1) The display device as claimed in claim 1, further comprising an insulating layer disposed on the light-shielding element, wherein the light-emitting element is disposed in a trench defined by the insulating layer. ### Claim 12 (depends on 11) The display device as claimed in claim 11, wherein the insulating layer serves as a pixel define layer of the display device. ### Claim 13 (depends on 1) The display device as claimed in claim 1, wherein the light-emitting element further comprises a quantum well region located between the P-end and the N-end. ### Claim 14 (depends on 1) The display device as claimed in claim 1, wherein the light-emitting element is mixed in a solution. ### Claim 15 (depends on 1) The display device as claimed in claim 1, further comprising an insulating layer disposed on the thin-film transistor, wherein the insulating layer comprises a recess, and the light-shielding element is disposed in the recess. ### Claim 16 (depends on 15) The display device as claimed in claim 15, wherein a thickness of the light-shielding element disposed in the recess is variable. ### Claim 17 (depends on 16) The display device as claimed in claim 16, wherein the recess has a side surface, the light-shielding element on the side surface has a first thickness at a position closer to the light-emitting element, the light-shielding element on the side surface has a second thickness at a position farther from the light-emitting element, and the first thickness is smaller than the second thickness. ### Claim 18 (depends on 1) The display device as claimed in claim 1, wherein the light-shielding element is disposed corresponding to the light-emitting element.