Fast spatial light modulator based on atomically thin reflector

A method of changing the reflective properties of a surface, the surface comprising an optical device, the optical device comprising:

• a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
• a first electrode electrically connected to the semiconductor layer;
• a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
• a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
• the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary, the method comprising:
• applying a first voltage to the first group of gate electrodes and, optionally, applying a second voltage to the second group of gate electrodes, wherein the second voltage, if applied, is different from the first voltage,
• thereby shifting the resonance wavelength within the first region, and, optionally, the second region.

A method of changing an angle of reflection of an optical beam, the method comprising:

• directing an optical beam at an optical device comprising:
• a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
• a first electrode electrically connected to the semiconductor layer;
• a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
• a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
• the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary, wherein the optical beam is directed at the at least one boundary;
• and
• applying a first voltage to the first group of gate electrodes and, optionally, applying a second voltage to the second group of gate electrodes, wherein the second voltage, if applied, is different from the first voltage.

An optical device, comprising:

• a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
• a first electrode electrically connected to the semiconductor layer;
• a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
• a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
• the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary;
• at least one voltage source electrically connected to the first and second groups of gate electrodes;
• a computing node, operatively coupled to the at least one voltage source, the computing node configured to cause the at least one voltage source to apply a first voltage to the first group of gate electrodes and, optionally, to apply a second voltage to the second group of gate electrodes, wherein the second voltage, if applied, is different from the first voltage,
• thereby shifting the resonant wavelength within the first region, and, optionally, the second region.