Preparation method and application of an Er doped Ga2O3 film

A near-infrared electroluminescent device based on the recombination of electrons and holes, characterized in that the device uses Ga2O3:

• Er films, whose preparation method comprises:
• (1) in a vacuum chamber, introducing mixed gas of Ar and O2, using Radio-Frequency magnetron sputtering method to sputter the erbium-doped gallium oxide target or co-sputter the erbium target and the gallium oxide target, after sputtering a blacking plate for 5 minutes, then starting sputtering deposition an erbium-doped gallium oxide film on a heated substrate;
• the substrate being p-type silicon;
• (2) under an atmosphere of oxygen or nitrogen, subjecting the erbium-doped gallium oxide film obtained in step (1) to a high temperature heat treatment above 300° C. to crystallize the gallium oxide while activating the erbium, and then naturally cooling down to obtain the erbium-doped gallium oxide film;
• wherein one side of the substrate of the erbium-doped gallium oxide film is deposited with a metal back electrode for connecting to the positive electrode of the power supply, and another side of the erbium-doped gallium oxide film is deposited with an indium tin oxide (ITO) transparent electrode for connecting to the negative electrode of the power supply;
• and
• wherein an onset voltage of the near-infrared electroluminescent device based on the recombination of electrons and holes is lower than 6 V.

A method of using Erbium-doped gallium oxide thin films in near infrared electroluminescent devices, wherein the Erbium-doped gallium oxide thin film is prepared by the following steps:

• (1) in a vacuum chamber, introducing mixed gas of Ar and O2, using Radio-Frequency magnetron sputtering method to sputter the erbium-doped gallium oxide target or co-sputter the erbium target and the gallium oxide target, after sputtering a blacking plate for 5 minutes, then starting sputtering deposition an erbium-doped gallium oxide film on a heated substrate;
• the substrate being p-type silicon;
• or thermally oxidized n-type silicon;
• (2) under an atmosphere of oxygen or nitrogen, subjecting the erbium-doped gallium oxide film obtained in step (1) to a high temperature heat treatment above 300° C. to crystallize the gallium oxide while activating the erbium, and then naturally cooling down to obtain the erbium-doped gallium oxide film.