# US 12,218,254 B2 · Semiconductor diode and method of manufacturing such a diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,254 B2 - Document ID: US12218254B2 - Status: Granted - Kind: B2 - Application number: 17/381,043 - Filed: 2021-07-20 - Published: 2022-02-03 - Granted: 2025-02-04 - Earliest claimed: 2020-07-28 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives - Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives - Inventors: Julien Buckley - Web page: https://patentgrep.com/patent/US12218254B2 ## CPC - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D 8/043: {of planar diodes} - H10D 62/85: being Group III-V materials, e.g. GaAs - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor diode, including: a first doped semiconductor region of a first conductivity type; a second doped semiconductor region of a second conductivity type opposite to the first conductivity type, arranged on top of and in contact with the upper surface of the first semiconductor region; a first conductive region arranged on top of and in contact with the upper surface of the second semiconductor region, the first conductive region comprising a through opening opposite a portion of the second semiconductor region; a second conductive region made of a material different from that of the first conductive region, coating the upper surface of the second semiconductor region opposite said opening; a cavity extending through the second conductive region and through the second semiconductor region opposite a portion of said opening; a dielectric region coating the lateral walls and the bottom of the cavity; a third conductive region coating the dielectric region on the lateral walls and at the bottom of the cavity, the third conductive region being further electrically in contact with the first and second conductive regions. ## Claims ### Claim 1 A semiconductor diode, comprising: a first doped semiconductor region of a first conductivity type; a second doped semiconductor region of a second conductivity type opposite to the first conductivity type, arranged on top of and in contact with an upper surface of the first semiconductor region; a first conductive region arranged on top of and in direct contact with an upper surface of the second semiconductor region, the first conductive region comprising a through opening opposite a portion of the second semiconductor region; a second conductive region made of a material different from that of the first conductive region, coating and in direct contact with the upper surface of the second semiconductor region opposite said opening; a cavity extending through the second conductive region and through the second semiconductor region opposite a portion of said opening; a dielectric region coating the lateral walls and a bottom of the cavity, the dielectric region disposed in direct contact with sides of the second doped semiconductor and with sides of the second conductive region on lateral walls of the cavity, and in direct contact with the first doped semiconductor region at the bottom of the cavity, the dielectric region overlapping the first conductive region and the second conductive region, the dielectric region overlapping the first conductive region and the second conductive region; and a third conductive region coating the dielectric region on the lateral walls and at the bottom of the cavity, the third conductive region being further electrically in contact with the first conductive region and the second conductive region. ### Claim 2 (depends on 1) The diode according to claim 1, wherein the second conductive region is in contact, by its lower surface, with the upper surface of the second semiconductor region opposite said opening. ### Claim 3 (depends on 1) The diode according to claim 1, wherein a third semiconductor region of the first conductivity type forms an interface between the second conductive region and the second semiconductor region opposite said opening. ### Claim 4 (depends on 1) The diode according to claim 1, wherein the dielectric region covers the upper surface of the second conductive region opposite said opening. ### Claim 5 (depends on 1) The diode according to claim 1, wherein the dielectric region has an equivalent silicon oxide thickness smaller than 5 nm on the lateral walls of the cavity. ### Claim 6 (depends on 1) The diode according to claim 1, wherein the second conductive region has a work function smaller than that of the first conductive region. ### Claim 7 (depends on 1) The diode according to claim 1, wherein the second conductive region has a work function substantially equal to the electron affinity of a material of the second semiconductor region. ### Claim 8 (depends on 1) The diode according to claim 1, wherein the third conductive region has a work function smaller than or equal to 5 eV. ### Claim 9 (depends on 1) The diode according to claim 1, wherein each of the first semiconductor region and the second semiconductor regions comprises gallium nitride. ### Claim 10 (depends on 1) The diode according to claim 1, wherein the first conductive region includes a material selected from the group consisting of platinum, palladium, a nickel-gold alloy, a palladium-gold alloy, and a palladium-nickel-gold alloy. ### Claim 11 (depends on 1) The diode according to claim 1, wherein the second conductive region includes a material selected from the group consisting of titanium, aluminum, or a titanium-aluminum alloy. ### Claim 12 (depends on 1) The diode according to claim 1, wherein the third conductive region is made of titanium nitride. ### Claim 13 (depends on 1) The diode according to claim 1, further comprising a fourth conductive region in contact with a lower surface of the first semiconductor region.