# US 12,218,238 B2 · Growth structure for strained channel, and strained channel using the same and method of manufacturing device using the same

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- Number: US 12,218,238 B2
- Document ID: US12218238B2
- Status: Granted
- Kind: B2
- Application number: 17/522,851
- Filed: 2021-11-09
- Published: 2022-07-07
- Granted: 2025-02-04
- Earliest claimed: 2021-11-09
- Assignees: Korea Advanced Institute of Science and Technology
- Applicants: Korea Advanced Institute of Science and Technology
- Inventors: Sanghyeon Kim; Hyeongrak Lim
- Web page: https://patentgrep.com/patent/US12218238B2

## CPC

- H10D 30/027: {of lateral single-gate IGFETs}
- H10D 30/798: {being provided in or under the channel regions}
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/0323: {comprising monocrystalline silicon}
- H10D 30/6744: {Monocrystalline silicon}
- H10D 30/796: {having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates}
- H10P 90/1914: {using bonding}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed are a growth structure for a strained channel, and a strained channel using the same and a method of manufacturing a device using the same. The growth structure for a strained channel includes a support substrate, a strain-relaxed buffer (SRB) layer disposed on a support substrate, a base growth layer grown to have one composition on the SRB layer, and a strained channel layer grown to have another composition on the base growth layer. The strained channel layer may include at least one of a tensile-strained channel layer or a compressively strained channel layer.

## Claims

### Claim 1

A growth structure for a strained channel, comprising: a support substrate;
a strain-relaxed buffer (SRB) layer disposed on a support substrate;
a base growth layer grown to have a first composition on the SRB layer, wherein the base growth layer comprises: a buffer layer disposed on the SRB layer and a p-type layer disposed on the buffer layer,
a first strained channel layer grown to have a second composition on the base growth layer;
a first etch-stop layer adjacent to the first strained channel layer; and
a second strained channel layer grown to have a third composition on the first etch-stop layer, wherein the second strained channel layer is adjacent to the first strained channel layer.

### Claim 2 (depends on 1)

The growth structure of claim 1, wherein the first strained channel layer comprises at least one of a tensile-strained channel layer or a compressively strained channel layer.

### Claim 3 (depends on 2)

The growth structure of claim 2, wherein the tensile-strained channel layer and the compressively strained channel layer are disposed on the base growth layer.

### Claim 4 (depends on 1)

The growth structure of claim 1, wherein the base growth layer and the first strained channel layer are made of at least one of silicon or germanium and are grown based on different etch rates.

### Claim 5 (depends on 3)

The growth structure of claim 3, wherein the first strained channel layer further comprises an insulating member interposed between the tensile-strained channel layer and the compressively strained channel layer.

### Claim 6 (depends on 2)

The growth structure of claim 2, wherein the first strained channel layer further comprises a second etch-stop layer interposed between the base growth layer and the compressively strained channel layer.

### Claim 7 (depends on 1)

The growth structure of claim 1,
further comprising an insulating member interposed between the first strained channel layer and the first etch stop layer, and between the first strained channel layer and the second strained channel layer on the base growth layer.